Interface-related switching behaviors of amorphous Pr0.67Sr0.33MnO3-based memory cells

The resistive switching properties in amorphous Pr0.67Sr0.33MnO3 films deposited by pulsed laser deposition are investigated.Reproducible and bipolar counter-8-shape and 8-shape switching behaviours of Au/Pr0.67Sr0.33MnO3 /F：SnO2 junctions are obtained at room temperature.Dramatically,the coexistence of two switching polarities could be reversibly adjusted by an applied voltage range.The results allocated those two switching types to areas of different defect densities beneath the same electrode.The migration of oxygen vacancies and the trapping effect of electrons under an applied electric field play an important role.An interface-effect-related resistance switching is proposed in an amorphous Pr0.67Sr0.33MnO3-based memory cell.     

Interface-related switching behaviors of amorphous Pr_0.67Sr_0.33MnO₃-based memory cells

The resistive switching properties in amorphous Pr0.67Sr0.33MnO3 films deposited by pulsed laser deposition are investigated.Reproducible and bipolar counter-8-shape and 8-shape switching behaviours of Au/Pr0.67Sr0.33MnO3 /F:SnO2 junctions are obtained at room temperature.Dramatically,the coexistence of two switching polarities could be reversibly adjusted by an applied voltage range.The results allocated those two switching types to areas of different defect densities beneath the same electrode.The migration of oxygen vacancies and the trapping effect of electrons under an applied electric field play an important role.An interface-effect-related resistance switching is proposed in an amorphous Pr0.67Sr0.33MnO3-based memory cell.     

Bias polarity-dependent unipolar switching behavior in NiO/SrTiO_3 stacked layer

The identification of the switching location has been a key technology to tune the physical properties of unipolar resistive switching(RS) cells.Here we report the RS properties of Au/Ni O/Sr Ti O3(STO)/Pt memory cells.The switching repeatability is closely related to the applied bias polarity,which is different from the scenario of the Au/STO/Pt cells reported in our previous researches.The high resistance in positive bias is greater than that in negative bias.The R(T)–R0 I2 R(T) plot of the on-state I–V curve shows a regular shape only with a slight bend and an abnormal shape with an abrupt increase and decrease under negative and positive bias,respectively.These comparative experimental results reveal that the conductance filament consisting of oxygen vacancies grows from the cathode to the anode.The spatial RS location is identified with the weaker part along the conductance filament length direction,which should be near the Ni O/STO interface and STO/Pt interface under positive and negative bias,respectively.