Bi1.6Pb0.4Sr2Ca2Cu3Ox超导体中调制结构的可逆变化

Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_x超导体在65O℃O₂中等温退火,调制结构由纯Pb型,经由Bi,Pb混合型,最后变为纯Bi型;反之,经Q₂处理后,又在650℃流动N₂中等温退火,调制结构又由纯Bi型,过渡到Bi,Pb混合型,最终将恢复到纯Pb型,整个过程基本可逆.调制结构的变化与Pb离子运动密切相关,P 关键词：     

PbBi2Nb2O9的晶体结构

PbBi₂Nb₂O₉晶体属正交晶系,空间群为D_2h²³-Fmmm。晶胞参数为a=5.4806(7)?,b=5.4791(7)?,c=25.416(3)?,α=β=γ=90.0(0)°,V=763.2(2)?³。单位晶胞内化学式数z=4,D_obs=7.91g/cm³,D_x=8.26g/cm³ 关键词：     

Bi2Sr2CaCu2O8的晶体结构与超导性能

本文研究了Bi-Sr-Ca-Cu-O体系中理想成份为Bi₂Sr₂CaCu₂O₈化合物的超导性能和晶体结构。名义成份为BiSrCaCu₂O_5.5零电阻超导转变温度T_c(0)=81.5K。用X射线粉末衍射方法测定了Bi₂Sr₂CaCu₂O₈的晶体结构,其基本结构属体心四方晶系,空间群为D_4h¹⁷-l4/mmm,点阵常数a=3.825?,c=30.82?。每单胞化合式单位为2.2Ca占据2(a)等效点系,4Sr,4Bi和4Cu占据三组4(e)位置,其原子参数z分别为0.110,0.302和0.445,16O分别占据8(g),z=0.445和二组4(e),z=0.210和0.380。Bi₂Sr₂CaCu₂O₈晶体结构可认为是阳离子沿z轴的(00z)和((1/2)(1/2)z)交错排列,由Aurivillius相导生出来的。讨论了在Bi-Sr-Ca-Cu-O体系中可能存在的其它沿z轴不同堆垛层数的超导相。 关键词：     

Bi_2Pb_2V_2O_(10)的晶体结构

使用X射线单晶衍射法测定了Bi_2Pb_2V_2O_(10)的结构。该晶体属三斜晶系,空间群为C_1~1-P1,单位晶胞内化学式数Z=1,晶胞参数为:a=7.084(4)A,b=7.278(3)A,c=5.587(3)A,α=111.91(5)°,β=95.01(6)°,γ=108.86(4)°,V=245.70A~3,D_x=7.35g/cm~3,μ(MoK_α)=678,94cm~(-1),F(000)=456。用Patterson函数分析及Fo rier技术测定了结构,对原子坐标、各向同性及各向异性热参数进行了最小二乘方修正,R=0.079。结构分析表明,Bi_2Pb_2V_2O_(10)的Pb原子与O原子形成八角十二面体,Bi原子与O原子形成六角多面体。两个共棱的Pb—O多面体与两个共棱的Bi—O多面体相连,并沿bc平面无限延伸。讨论了吸收的影响。最后,将Bi_2Pb_2VO_(10)的结构与Pb_2SO_5的结构进行了比较。     

Bi2Te3(111)和Al2O3(0001)衬底对Bi(111)双原子层的电子结构及拓扑性质的影响

晶体铋沿(111)面方向的双原子层及薄膜具有新奇的拓扑性质.在实验生长或者实际应用中,其必然与衬底接触.本文采用紧束缚近似方法与第一性原理计算研究了Bi双原子层及其与Bi₂Te₃和Al₂O₃衬底形成的异质结的电子结构.计算结果表明, Bi双层是具有0.2 eV的半导体.当其与具有拓扑表面态的Bi₂Te₃形成异质结时,两者电子态之间有很强的杂化,不利于Bi(111)双层拓扑电子态的观测.将其放在绝缘体Al₂O₃(0001)时,导带与价带与衬底电子态杂化较小,并且展现出巨大的Rashba自旋劈裂.这是由于衬底诱导Bi(111)双原子层中心反演对称性破缺和自旋-轨道耦合共同作用的结果.进一步采用紧束缚近似计算得到的结果发现,衬底Al₂O₃(0001)对Bi(111)双层的作用等效于一个约为0.5—0.6 V/?(1?=0.1 nm)的外电场.此外, Bi(111)双原子层与衬...     

Eu3+掺杂Bi2O3-PbO-B2O3-ZnO玻璃光谱性质

用高温融熔法制备了Eu³⁺掺杂浓度为1%的(60-x)Bi₂O₃xPbO30B₂O₃10ZnO(x=0,10,30,摩尔分数)玻璃.测定了玻璃的差热分析曲线、吸收光谱、声子边带谱、发射光谱与激发光谱.由发射光谱与稀土Eu³⁺离子光学跃迁矩阵元的特点,计算了Eu³⁺光学跃迁的J-O参数Ω₂与Ω₄.结果显示强度参数Ω₂随着PbO量的增加而略减少,表明材料的对称性略增加,Eu—O键强减弱,共价性降低.PbO组分的增加,使玻璃的结晶起始温度与软化温度差降低,导致玻璃的热温度性变差.随着PbO的增加,电-声子耦合减弱.     

光学碱度对Tb3+掺杂Bi2O3-B2O3玻璃发光性能的影响

采用熔融法制备了Tb³⁺掺杂的Bi₂O₃-B₂O₃系统玻璃,使用激发、发射及拉曼光谱分析了光学碱度与玻璃结构及发光性能的关系,同时绘制了Tb³⁺、Bi³⁺和Bi²⁺的能级图。研究结果表明：Tb³⁺掺杂的Bi₂O₃-B₂O₃玻璃由[BO₃]、[BiO₃]、[BO₄]及[BiO₆]共同组成,且随着光学碱度由0.63增加到0.93,玻璃的结构逐渐疏松。高的光学碱度使部分Bi³⁺变为Bi²⁺,发出571 nm（²P_3/2（2）→²P_1/2）的光,Bi³⁺→Tb³⁺的能量降低。在光学碱度及Tb³⁺、Bi³⁺和Bi²⁺离子的共同作用下,随着光学碱度的提高,玻璃的发光颜色由黄绿色变为白色。     

Ce掺杂Bi2O3 光催化剂的制备、表征及其可见光催化性能

采用水热-焙烧法制备了Ce掺杂的可见光响应的Bi₂O₃光催化剂（Ce-Bi₂O₃）。利用 XRD、FT-IR、XPS和 UV-Vis对不同Ce-Bi₂O₃样品进行了表征分析,并以光催化降解金橙Ⅱ溶液为探针反应,考察了Ce-Bi₂O₃的可见光催化性能。结果表明,Ce掺杂可以减小催化剂的禁带宽度,使光谱响应范围向可见光拓展。掺杂的Ce可取代Bi₂O₃晶格中部分Bi,形成Bi-O-Ce键,并生成了少量铈铋复合氧化物（Bi_7.38Ce_0.62O_12.31）,它们的存在有效地抑制了光生电子-空穴对的复合,有助于提高Bi₂O₃的可见光催化活性。但焙烧时间过长将导致Ce-Bi₂O₃催化剂的表面发生烧结现象,致使其催化活性降低。可见光照射下的金橙Ⅱ光催化降解实验表明,经2 h焙烧后得到的Ce/Bi的量比为0.5 的Ce-Bi₂O₃催化剂具有最佳的光催化活性。     

SrBi2Ta2O9/Bi4Ti3O12复合铁电薄膜的制备与特性研究

采用溶胶凝胶工艺在p-Si衬底上制备了SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂复合铁电薄膜. 研究了SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂复合薄膜的微观结构与生长行为、铁电性能和疲劳特性. 研究表明: Si衬底Bi₄Ti< 关键词： 2Ta₂O₉')" href="#">SrBi₂Ta₂O₉ 4Ti₃O₁₂')" href="#">Bi₄Ti₃O₁₂ 复合铁电薄膜 溶胶凝胶工艺     

Bi2O3-B2O3-BaO玻璃的制备及其近红外发光性能的研究

采用高温熔融法制备了xBi₂O₃-50B₂O₃-(50-x)BaO玻璃, 测定了样品玻璃的近红外光区的发射谱、荧光寿命以及Raman光谱. 在808 nm波长光的激发下, 50Bi₂O₃-50B₂O₃二元玻璃中未观察到近红外发光; 随体系中BaO的加入, 当x为40, 45以及49时, 玻璃样品中观察到了近红外宽带发光现象; BaO含量进一步增加, 当x=10–30时, 近红外发光现象消失; 而当玻璃中Bi浓度很低时, 在0.5Bi₂O₃-50B₂O₃-50BaO及1Bi₂O₃-50B₂O₃-50BaO玻璃中发现了近红外发光现象, 且存在多个发光峰. 对铋离子近红外发光机理进行了初步的探讨.     

Crystal structure of Tl0.5Pb0.5Sr2Ca2Cu3O9 at 300 K and around Tc (118 K)

The crystal structure including the cation distribution, of a polycrystalline sample of nominal composition Tl_0.5Pb_0.5Sr₂Ca₂Cu₃O₉ with T_c = 118.2 K has been determined using resonant synchrotron X-ray diffraction data collected at the Cu K, Tl L_III and Sr K edges and time-of-flight powder neutron diffraction data. No oxygen deficiency was observed, but cation disorder at all the non copper sites according to the formula (Tl_0.60Pb_0.40)(Sr_1.60Ca_0.40)(Ca_1.93Tl_0.07) Cu₃O₉ gives a mean hole concentration of 0.18(1) per Cu atom for the three CuO₂ planes, consistent with the high T_c for this material. Analysis of five time-of-flight powder neutron diffraction data between 80 and 150 K have revealed a possible discontinuity in the variation of the c lattice parameter at T_c, due to an anomaly in the position of the apical oxygen atoms.     

Al~(3+)/Mo~(6+)双离子取代ZrV_2O_7中Zr~(4+)/V~(5+)实现近零膨胀

采用固相烧结法制备了Zri_(1-x)Al_(2-x)V_(2-x)Mo_xO_7(0≤x≤0.9),并通过调整Al~(3+)/Mo~(6+)对ZrV_2O_7中的Zr~(4+)/V~(5+)离子替代量来实现近零膨胀,对于较小的x值(x≤0.3),材料保持了与ZrV_2O_7相同的立方相结构.随着Al~(3+)/Mo~(6+)替代量的增加,(Al/Zr)~-和(Mo/V)~+之间的库仑相互作用逐渐加强,这种库仑相互作用导致材料中未发生畸变的立方相晶体结构逐渐减少.当x≥0.7时,材料中立方相晶体结构完全消失.在425-750 K温度区间内,Zr_(0.5)Al_(0.5)M_(0.6)O_7展示出近零膨胀性质(-0.39×l0~(-6)K~(-1)).Zr_(0.5)Al_(1.5)V_(1.5)Mo_(0.5)O_7的低热膨胀性能可能与Al~(3+)/Mo~(6+)对ZrV_2O_7中Zr~(4+)/V~(5+)部分替代引起部分晶体结构发生的畸变及其对未替代部分的晶格结构的影响有关.     

Preparation, characterization and oxide ion conductivity in U-substituted Bi4V2O11

A Bi₂V_{1 − x − y}U_xBi_yO_{5.5 + 0.5x − y} solid solution derived from Bi₄V₂O₁₁ has been prepared and characterized with x up to 0.125 for y = 0. Partial substitution of U⁶⁺ for V⁵⁺ in Bi₄V₂O₁₁ leads to the stabilization at room temperature of the high-oxide ion conducting γ-phase, in contrast with other M⁶⁺ dopants which stabilize the β-phase. The lower conductivity in U substituted system compared with BICUVOX.10 is attributed to its higher activation energy. Conductivity values and activation energies of the U substituted phases compare well with Bi₂UO₆.     

Pb掺杂对Cd_2Ru_2O_7反常金属态的调控

具有烧绿石结构的Cd_2Ru_2O_7在形成长程反铁磁序的同时进入反常的金属态.采用高压高温方法制备了一系列Pb掺杂的Cd_(2-x)Pb_xRu_2O_7(0≤x≤2)多晶样品,并系统研究了其晶体结构和电阻率、磁化率、热电势等物理性质.尽管Pb_2Ru_2O_7是泡利顺磁金属,但少量Pb~(2+)掺杂的样品Cd1.8Pb0.2Ru2O7却呈现出明显的金属-绝缘体转变,与施加静水压和少量Ca~(2+)掺杂的效果类似.通过与类似的烧绿石Ru~(5+)氧化物进行对比,提出Cd_2Ru_2O_7中的Ru~(5+)-4d~3电子态恰好处于巡游到局域过渡的区域,少量Pb~(2+)掺杂造成的晶格无序增强了电子的局域性,使得形成反铁磁序的同时伴随出现了金属-绝缘体转变.这表明具有烧绿石结构的Ru~(5+)氧化物是研究巡游-局域电子转变的理想材料体系.     

阴离子取代合成Sr3LaAxV3-xO12:Eu3+(A=Mo,W)白光荧光粉

通过高温固相法合成Sr₃LaA_xV_3-xO₁₂:Eu³⁺（A=Mo,W）荧光粉,利用MoO₄^2-和WO₄^2-取代基质中部分VO₄^3-,改变基质组成和结构,进而影响基质和激活剂Eu³⁺离子的发光性能。采用X射线衍射（XRD）、扫描电子显微镜（SEM）和荧光分光光度计对所合成样品的物相、形貌、荧光性能及荧光寿命进行表征。研究表明,MoO₄^2-和WO₄^2-的部分掺杂对基质发光位置和强度均有影响,能明显减弱VO₄^3-的发光,但对Eu³⁺离子发光影响不大,添加电荷补偿剂F^-可以加强VO₄^3-对Eu³⁺离子的能量传递。通过调整基质VO₄^3-发光和Eu³⁺离子发光,可以得到单一基质的白光荧光粉。初步探讨了阴离子掺杂对Eu³⁺离子红光发射增强的机理。     

New red Y0.85Bi0.1Eu0.05V1−yMyO4 (M=Nb, P) phosphors for light-emitting diodes

The Y_0.85Bi_0.1Eu_0.05V_1−yM_yO₄ (M=Nb, P) as new near-ultraviolet excited phosphors were synthesized and their luminescence properties under 365 nm excitation were investigated in detail. It indicated that by doping small amount of P⁵⁺ into V⁵⁺ sites, the excitation intensity of charge transfer (CT) band of Bi–O (330–400 nm) was greatly improved. By substituting Nb⁵⁺ for V⁵⁺, both the CT bands of Bi–O and Eu–O (240–320 nm) were significantly enhanced. As a result, the emission intensity of Y_0.85Bi_0.1Eu_0.05V_1−yM_yO₄ (M=Nb, P) could be improved about 90% by doping 5 mol% P⁵⁺ and 110% by doping 5 mol% Nb⁵⁺. Comparing with the commercial Y₂O₂S:Eu³⁺ phosphors, the Y_0.85Bi_0.1Eu_0.05V_0.95M_0.05O₄ (M=Nb, P) phosphors exhibited excellent color purity and much higher brightness. The results showed that these Y_0.85Bi_0.1Eu_0.05V_1−yM_yO₄ (M=Nb, P) phosphors could be considered as promising red phosphors for application in LED.     

Lithium insertion into V6O13 studied by deformation electron density refinement of single-crystal X-ray data

Deformation electron density refinement of single-crystal X-ray data has been performed for V₆O₁₃ and for one of its electrochemically lithiated phases Li₂V₆O₁₃. The electron rearrangement associated with lithium insertion is extracted by subtracting the two derived electron deformation models from one another. The reduction (from nominally V⁵⁺ to V⁴⁺) of one of the three independent vanadium atoms (V2) in the asymmetric unit can be identified, along with significant changes in the effective charges on certain of the oxygens.     

偏硼酸钡低温相的晶体结构

本文报道了新型信频材料——偏硼酸钡[Ba₃(B₃O₆)₂]低温相的晶体结构。晶体属三方晶系,空间群为C₃⁴-R3,取六方坐标系,晶胞参数为a=b=12.532?,c=12.717?,z=6。在PhilipsPW-1100四圆衍射仪上收集到独立衍射693个。采用重原子法通过三维帕特逊和三维傅里叶合成测定结构,并用对角矩阵最小二乘法修正至R=0.046。该晶体是一个由Ba²⁺和(B₃O₆)^3-环交错组成的层状阶梯式结构。其阴离子(B₃O₆)^3-环基本上是平面状的。基团平面垂直于三次轴;Ba²⁺近邻有7个氧原子。将此结构与偏硼酸钡高温相比较表明,由于钡阳离子的非中心对称分布改变了阴离子硼氧环共轭基团的电子云密度,这一结构上的变化对该晶体的倍频效应做了主要贡献。 关键词：     

Lithium insertion into Li4V3O8

The lithium insertion characteristics of lithium vanadate, Li₄V₃O₈, were investigated using LiV₃O₈ prepared by the precipitation technique as the starting material. The Li₄V₃O₈ phase was formed by lithiation over x=1.5 in Li_1+xV₃O₈, and the diffusion of lithium in this phase determined the reaction rate of insertion more than x=1.5. Improvement of insertion kinetics in the Li₄V₃O₈ phase extended the lithium insertion limit from x=3.2 to x=4.0, compared with the case of LiV₃O₈ by conventional high temperature synthesis. Lithium insertion proceeds as the single-phase reaction in the range of 3.2<x<4.0.