Yb3+,Er3+:YAG透明陶瓷的制备和1.5 μm波段光谱性能研究

采用固相法和真空烧结技术制备了5at%Yb³⁺,2at％Er³⁺:YAG透明陶瓷.在1760 ℃真空烧结30 h后, 陶瓷样品具有较高透过率.SEM观察表明制备的透明陶瓷在晶粒和晶界处无气孔、第二相的存在.样品的吸收光谱和荧光光谱的测试结果表明: Yb³⁺在940nm波长处有具有较强的吸收系数.样品在1030nm波长的荧光寿命仅为0.274 ms,以及在1.5μm波段的荧光衰减寿命曲线中,初始的荧光强度呈上升趋势,这些表明了Yb,Er:YA 关键词： Er Yb:YAG透明陶瓷 1.5 μm荧光光谱 Judd-Ofelt理论     

Yb:Y2－2xLa2xO3激光透明陶瓷的光谱性能

对一种低温易烧结的Yb:Y_2-2xLa_2xO₃激光透明陶瓷的光谱性能进行了初步研究，Yb:Y_2-2xLa_2xO₃激光透明陶瓷具有宽的吸收带和大的吸收截面，在最强的吸收峰977nm处吸收截面达4.0×10^-20cm²；其荧光发射寿命为1.1ms，发射截面在1033nm处为1.0×10^-20cm²，在1077nm处为0.7×10^-20cm².Yb:Y_2-2xLa_2xO₃陶瓷的各项光学性能指标接近或达到单晶的指标. 关键词： 氧化镧钇 激光陶瓷 低温烧结 光谱性能     

衬底温度对MOCVD法沉积ZnO透明导电薄膜的影响

研究了衬底温度对MOCVD技术制备的ZnO薄膜的微观结构和光电特性影响. XRD和SEM的研究结果表明，衬底温度对ZnO薄膜的微观结构有显著影响，明显的形貌转变温度大约发生在175℃，低于175℃，薄膜呈镜面结构，晶粒为球状，高于177℃的较高温度范围，薄膜从“类金字塔”状的绒面结构演化为“岩石”状显微组织；随着温度增加，薄膜的晶粒尺寸明显增大.绒面结构的未掺杂ZnO薄膜具有17.96 cm²/V·s的高迁移率和3.28×10^-2 Ω·cm的低电阻率，对ZnO薄膜的进一步掺杂和结构优化有望应用于Si薄膜太阳电池的前电极. 关键词： MOCVD ZnO薄膜 透明导电氧化物 太阳电池     

Cr3+:Al2O3透明多晶陶瓷光谱特性分析

对透光性良好的Cr³⁺:Al₂O₃透明多晶陶瓷的光谱性能 进行了研究，其吸收光谱中吸收峰与单晶红宝石相一致，按吸收光谱和Tanabe-Sugano能级 图，算出其晶场强度参数D_q及Racah参数B分别为1792cm^-1， 689cm ^-1，D_q/B=2.6，陶瓷中Cr³⁺离子所处格位的晶体场强 比单晶弱一些，但Cr³⁺:Al₂O₃透明陶瓷仍属于强场晶 体材料；当Cr³⁺掺杂浓度到达0.8wt%时，陶瓷的发射谱仍保持较好的R线发射 ；随Cr³⁺掺杂浓度的增大，激发峰位发生“红移”.在Cr³⁺:Al₂O₃透明多晶陶瓷的荧光谱上，发现一个波长为670nm的发射峰，经激发 谱确认为Cr³⁺的发射峰. 关键词： 氧化铝 透明陶瓷 离子格位 光谱性质     

Cr4+在Al2O3多晶体中的光谱性能研究

采用传统无压烧结工艺制备Cr:Al₂O₃透明多晶陶瓷.测定了其退火前后的吸收光谱和荧光光谱，发现在Al₂O₃六配位的八面体结构中，Cr⁴⁺的荧光发射也处在1100—1600nm波段的红外区间，荧光发射峰位于1223nm附近，类似Cr⁴⁺在四面体中的发光行为.同时由于氧化铝晶格常数较小，晶体场强较强，使Cr⁴⁺:Al₂O_{3< 关键词： 4+')" href="#">Cr⁴⁺ 2}O₃透明陶瓷')" href="#">Cr:Al₂O₃透明陶瓷 光谱性质 八面体     

Nd3+掺杂的氧化镧钇透明激光陶瓷的光谱性能研究

采用传统无压烧结工艺制备了Nd³⁺掺杂的Y_2-2xLa_2xO₃(x=0.08)透明陶瓷并对其光谱性能进行了研究. 结果表明：Nd³⁺:Y_1.84La_0.16O₃透明陶瓷在780—850 nm的波长范围内有较宽的吸收带. 当Nd³⁺掺杂量为1.5at%时，在820 nm和激光二极管抽运的808 nm处的吸收截面分别为σ_abs(820 nm)=1.81×10^-20 cm²，σ_abs(808 nm)=1.54×10^-20 cm². 最强的发射峰位于1078 nm处，并具有荧光寿命长、发射带宽宽、量子效率高等特点. 加入La₂O₃后，基质的光谱品质参数X_Nd由1.6减小到0.46，因此和⁴F_3/2—⁴I_11/2跃迁相对应的荧光分支比β_J,11/2增大为56.82%. Nd³⁺:Y_1.84La_0.16O₃透明陶瓷的这些性质有利于高效率的激光输出和超短锁模激光脉冲的实现. 关键词： 氧化镧钇透明陶瓷 光谱性能 3+')" href="#">Nd³⁺     

Er3+/Yb3+共掺的氧化镧钇透明陶瓷的光谱性能研究

采用传统无压烧结工艺制备了Yb³⁺/Er³⁺共掺的氧化镧钇透明陶瓷并对其光谱性能进行了研究.样品具有较大的吸收和发射截面.La₂O₃的添加使样品的荧光寿命(τ_s)与玻璃接近，当Yb³⁺和Er³⁺的掺杂量分别为5at%和0.5at%时，测得τ_s=9.65　ms.这种荧光寿命长、发射截面大和线宽窄的特性有利于微型、可集成化和大功率激光输出的实现. 关键词： 透明陶瓷 吸收光谱 发射光谱 荧光寿命     

MOCVD法生长ZnO薄膜时氧源 t-BuOH和H2O的比较研究

以活性较低的叔丁醇(t-BuOH)和水(H₂O)作为氧源,采用MOCVD技术生长了ZnO薄膜。研究发现,t-BuOH作为氧源可以有效地抑制其与锌源之间的气相预反应,比H₂O作为氧源进行ZnO薄膜的外延生长具有更高的生长速率,得到的ZnO薄膜晶体质量更优,同时载流子的迁移率可以达到37.0 cm²·V^-1·s^-1, 表明t-BuOH更适合作为氧源通过MOCVD系统生长ZnO薄膜。     

透明陶瓷的超高压制备研究进展

透明陶瓷是一种具有广阔应用前景的新一代无机非金属材料。本文介绍一种非传统的透明陶瓷制备方法——超高压烧结。相对于传统的制备方法,超高压烧结具有烧结温度低、烧结时间短、致密度高、抑制晶粒长大等特点,对制备纳米结构透明陶瓷具有独特的优势。着重介绍了近年来超高压烧结透明陶瓷的研究成果和进展,包括钇铝石榴石(YAG)、镁铝尖晶石、氧化铝等常见透明陶瓷的超高压低温烧结,以及纳米聚晶金刚石(NPD)、B-C-N、Si3N4等超硬透明陶瓷的高温高压制备,并对透明陶瓷的高压烧结机理进行分析和总结。     

氧化锌纳米晶高压下的晶粒演化和性能

用GS-1B型六面顶压机研究了ZnO纳米晶高压下的晶粒演化和性能，用X射线衍射仪和场发射扫描电子显微镜对高压样品的晶粒尺寸、微观形貌进行了表征.结果表明，高压下ZnO纳米晶存在压致晶粒碎化效应.硬度和伏安特性实验表明，高压调制后样品的显微硬度约是常压烧结样品硬度的2.3倍，非线性伏安特性明显优于常压烧结样品. 关键词： 氧化锌纳米晶 高压 压致碎化 非线性伏安特性     

Pulsed laser deposition of Zr–N codoped <Emphasis Type="Italic">p</Emphasis>-type ZnO thin films

Present p-type ZnO films tend to exhibit high resistivity and low carrier concentration, and they revert to their natural n-type state within days after deposition. One approach to grow higher quality p-type ZnO is by codoping the ZnO during growth. This article describes recent results from the growth and characterization of Zr–N codoped p-type ZnO thin films by pulsed laser deposition (PLD) on (0001) sapphire substrates. For this work, both N-doped and Zr–N codoped p-type ZnO films were grown for comparison purposes at substrate temperatures ranging between 400 to 700 °C and N₂O background pressures between 10⁻⁵ to 10⁻² Torr. The carrier type and conduction were found to be very sensitive to substrate temperature and N₂O deposition pressure. P-type conduction was observed for films grown at pressures between 10⁻³ to 10⁻² Torr. The Zr–N codoped ZnO films grown at 550 °C in 1×10⁻³ Torr of N₂O show p-type conduction behavior with a very low resistivity of 0.89 Ω-cm, a carrier concentration of 5.0×10¹⁸ cm⁻³, and a Hall mobility of 1.4 cm² V⁻¹ s⁻¹. The structure, morphology and optical properties were also evaluated for both N-doped and Zr–N codoped ZnO films.     

The properties of transparent conducting molybdenum-doped ZnO films grown by radio frequency magnetron sputtering

Transparent conducting molybdenum-doped zinc oxide films are prepared by radio frequency(RF) magnetron sputtering at ambient temperature.The MoO3 content in the target varies from 0 to 5 wt%,and each film is polycrystalline with a hexagonal structure and a preferred orientation along the c axis.The resistivity first decreases and then increases with the increase in MoO3 content.The lowest resistivity achieved is 9.2 × 10-4.cm,with a high Hall mobility of 30 cm2.V-1.s-1 and a carrier concentration of 2.3×1020 cm-3 at an MoO3 content of 2 wt%.The average transmittance in the visible range is reduced from 91% to 80% with the increase in the MoO3 content in the target.     

Effects of hydrogen flow on properties of hydrogen doped ZnO thin films prepared by RF magnetron sputtering

The hydrogen doped ZnO (ZnO:H) thin films were deposited on quartz glass substrates by radio frequency magnetron sputtering. The doping characteristics of ZnO:H thin films with varied hydrogen flow ratio were investigated. At low hydrogen flow ratio (H₂/(H₂+Ar)≤0.02), the ZnO:H thin films exhibited dominant (002) peaks from X-ray diffraction and the lattice constants became smaller. The particles were mainly a columnar structure. The particles’ size became smaller, and the island-like structure appeared on the thin films surface. In addition, the low resistivity properties of ZnO:H thin films was ascribed to the increase of the carriers concentration and carriers mobility; When the hydrogen flow ratio was more than 0.02 (M≥0.02), two absorption bands at 1400–1800 cm^?1 and 3200–3900 cm^?1 were observed from the FT-IR spectra, which indicated that the ZnO:H thin films had typical Zn–H bonding, O–H bonding (hydroxyl), and Zn–H–O bonding (like-hydroxyl). The scanning electron microscope (SEM) results show that a large number of hydroxyl agglomeration formed an island-like structure on the thin films surface. The absorption peak at about 575 cm^?1 in the Raman spectra indicated that oxygen vacancies (V_O) defects were produced in the process of high hydrogen doping. In this condition, the low resistivity properties of ZnO:H thin films were mainly due to the increasing electron concentration resulted from V_O. Meanwhile, the Raman absorption peaks at approximately 98 cm^?1 and 436 cm^?1 became weaker, and the (002) XRD diffraction peak quenched and the lattice constants increased, which shows that the ZnO:H thin films no longer presented a typical ZnO hexagonal wurtzite structure. With the increasing of hydrogen flow ratio, the optical transmittance of ZnO:H thin films in the ultraviolet band show a clear Burstein–Moss shift effect, which further explained that electron concentration was increased due to the increasing V_O with high hydrogen doping concentration. Moreover, the optical reflectance of the thin films decreased, indicating the higher roughness of the films surface. It was noteworthy that etching effect of H plasma was obvious in the process of heavy hydrogen doping.     

多晶Li3+xV1-xTxO4(T=Ge,Si)离子导电性能的改善

本文用阻抗谱方法研究了Li_3+xV_1-xT_xO₄(T=Si,Ge)多晶的离子导电性,发现一些工艺条件如成型压强、烧结时间和烧结程序对电导率有很大影响。注意分析了这些影响的物理起因。最佳工艺条件是:在大约8t/cm²压强下成型样品。在1000℃连续烧结5至6天,烧结过程中,应尽量避免温度波动。在此条件下制备的Li_3.5V_0.5Ge_0.5关键词：     

室温制备低电阻率高透过率H,W共掺杂ZnO薄膜

采用脉冲直流磁控溅射法,以WO3:ZnO陶瓷靶为溅射靶材,通过在溅射气氛中引入H2的方式,在室温条件下制备了低电阻率、高可见和近红外光区透过率的H,W共掺杂ZnO (HWZO)薄膜.系统地研究了H2流量对所制备的HWZO薄膜的结构、组分、元素价态、光电特性的影响.结果表明:掺入的H可促进Zn的氧化,改善薄膜的结晶质量,提高薄膜透过率.H引入之后薄膜的载流子浓度增加,电阻率降低.在H2流量为6mL/min时制备的HWZO薄膜性能最优,电阻率为7.71×10-4 Ω·m,光学带隙为3.58 eV,400-1100 nm的平均透过率为82.4％.     

Growth of high-quality ZnO thin films on (11\bar{2}0) a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

High-quality ZnO thin films were grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy. X-ray diffraction and transmission electron microscopy reveal that the ZnO films have high structural quality and an atomically sharp ZnO/Al₂O₃ interface. The full width at half maximum values of the 0002 and $30\bar{3}2$ ZnO ω-rocking curves are 467.8 and 813.5 arc sec for a 600 nm thick ZnO film. A screw dislocation density of 4.35×10⁸ cm^?2 and an edge dislocation density of 3.38×10⁹ cm^?2 are estimated by X-ray diffraction. The surface of the ZnO epilayers contains hexagonal pits, which can be observed in the Zn-polar ZnO. The films have a resistivity of 0.119 Ω?cm, an electron concentration of 6.85×10¹⁷ cm^?3, and a mobility of 76.5 cm²?V^?1?s^?1 at room temperature. Low temperature photoluminescence measurements show good optical properties comparable to ZnO single crystals.     

The room-temperature ferromagnetism of defect-rich ZnMgO semiconductor thin films

The positive temperature coefficient of resistance (PTCR) characteristics of Na₂Ti₆O₁₃ (NT)-doped 0.94BaTiO₃–0.06(Bi_0.5Na_0.5)TiO₃ (BBNT) ceramics were investigated in order to evaluate the effect of NT as a new additive for lead-free PTCR thermistor application. The BBNT ceramic sintered at 1325°C exhibited a relatively high Curie temperature (T _C ) of 158°C while its PTCR characteristic was not satisfactory for thermistor application. However, doping with NT significantly influenced the PTCR behavior of BBNT ceramic. It is considered that NT was responsible for grain growth of the BBNT by forming a liquid phase during sintering due to its low melting temperature of 1300°C. The grain growth resulted in the enhanced PTCR characteristics of BBNT ceramic. In particular, 0.1 mol% NT doped BBNT ceramic exhibited excellent PTCR performance of low resistivity at room temperature (1.6×10² Ω cm), resistivity increase near T _C (1.28×10⁴) and high T _C of 158°C, suitable for lead-free PTCR thermistor application.     

Ag掺杂p型ZnO薄膜及其光电性能研究

采用超声喷雾热分解法在石英衬底上以醋酸锌水溶液为前驱体,以硝酸银水溶液为Ag掺杂源生长了Ag掺杂ZnO(ZnO：Ag)薄膜.研究了衬底温度对所得ZnO：Ag薄膜的晶体结构、电学和光学性质的影响规律.所得ZnO：Ag薄膜结构良好,在室温光致发光谱中检测到很强的近带边紫外发光峰,透射光谱中观测到非常陡峭的紫外吸收截止边和较高的可见光区透过率,表明薄膜具有较高的晶体质量与较好的光学特性.霍尔效应测试表明,在500℃下获得了p型导电的ZnO：Ag薄膜,载流子浓度为5.30×10¹⁵cm关键词： ZnO：Ag薄膜 p型掺杂 超声喷雾热分解 霍尔效应     

Critical current in Ag/BPSCCO tapes using low purity materials

Silver-clad Bi_1·7Pb_0·4Sr_1·8Ca₂Cu_3·5O _x (BPSCCO) tapes have been fabricated using low purity (98–99%) starting materials and following the powder-in-tube technique. MaximumJ _c values of 6·14 × 10³ A·cm⁻² at 77 K and 1·4 × 10⁵ A·cm⁻² at 4·2 K have been obtained in tapes subjected to the process of intermediate rolling and sintering. The bulk superconducting material used for the tape-fabrication contains both 2223 and 2212 phases in the ratio 60:40. A pure phase material and the optimization of the sintering parameters are expected to yield much higherJ _c values at 77 K. It is possible that the copper-rich phase(s) and/or a small amount of iron impurity (60 ppm) present in CuO might be acting as flux pinning sites and could be responsible for highJ _c values.     

NH3气氛处理制备p型ZnO薄膜及性能表征

采用NH₃气氛处理直流/射频共溅射方法制得的ZnO：Al薄膜,从而获得Al+N共掺p型ZnO薄膜.XRD,场发射扫描电子显微镜测试及Hall效应测试发现,处理温度对ZnO薄膜的结构和电学性能具有较大的影响,其中处理温度为700℃时,薄膜具有较好的c轴择优取向,并且薄膜表面平整,结构紧密,晶粒大小均匀,无明显空洞和裂缝,具有良好的表面质量,晶粒尺寸约为40—60nm,薄膜的导电类型由n型转变为p型. 关键词： p型ZnO Al+N共掺杂 直流/射频共溅射