The room-temperature ferromagnetism of defect-rich ZnMgO semiconductor thin films |
| |
| Authors: | Q Q Fang W N Wang J G Li Q Q Ding C Wang W J Huang H M Zhang Q P Zhang |
| |
| Institution: | (1) Optic and Electronic Ceramics Division, Korea Institute of Ceramic Engineering & Technology, 103 Fashion Danji-gil, Geumcheon-gu, Seoul, 153-801, Korea;(2) Department of Materials Science and Engineering, Korea University, 5-1 Anam-Dong, Seungbuk-Gu, Seoul, 136-701, Korea;(3) Hiel Corporation, 396-1 Haewol-Li, Soyang-Myeon, Wanju-Kun, Jeonbuk, 565-840, Korea |
| |
| Abstract: | The positive temperature coefficient of resistance (PTCR) characteristics of Na2Ti6O13 (NT)-doped 0.94BaTiO3–0.06(Bi0.5Na0.5)TiO3 (BBNT) ceramics were investigated in order to evaluate the effect of NT as a new additive for lead-free PTCR thermistor application.
The BBNT ceramic sintered at 1325°C exhibited a relatively high Curie temperature (T
C
) of 158°C while its PTCR characteristic was not satisfactory for thermistor application. However, doping with NT significantly
influenced the PTCR behavior of BBNT ceramic. It is considered that NT was responsible for grain growth of the BBNT by forming
a liquid phase during sintering due to its low melting temperature of 1300°C. The grain growth resulted in the enhanced PTCR
characteristics of BBNT ceramic. In particular, 0.1 mol% NT doped BBNT ceramic exhibited excellent PTCR performance of low
resistivity at room temperature (1.6×102 Ω cm), resistivity increase near T
C
(1.28×104) and high T
C
of 158°C, suitable for lead-free PTCR thermistor application. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
