157 nm F2-laser writing of silica optical waveguides in silicone rubber

Silica (SiO2) optical waveguides have been fabricated on the surface of silicone [(SiO(CH3)2)n] rubber by photochemical modification of silicone rubber into silica with 157 nm F2-laser radiation. The 2 mm thick silicone was exposed through a thin (approximately 0.2 mm) air layer to generate oxygen radicals that chemically assisted in the silica transformation. Silica waveguides were defined in 8-16 microm wide exposure strips by a proximity Cr-on-CaF2 photomask. Optimum laser processing conditions are presented for generating crack-free waveguides with good optical transparency at red (635 nm) and infrared (1550 nm) wavelengths. A propagation loss of approximately 6 dB/cm is reported at the 1550 nm wavelength.     

Planar waveguide-coupled, high-index-contrast, high-Q resonators in chalcogenide glass for sensing

High-index-contrast compact microdisk resonators in thermally evaporated As2S3 and Ge17Sb12S71 chalcogenide glass films are designed and fabricated using standard UV lithography and characterized. Our pulley coupler configuration demonstrates coupling of the resonators to monolithically integrated photonic wire waveguides without resorting to demanding fine-line lithography. Microdisk resonators in As2S3 support whispering-gallery-mode with cavity quality factors (Q) exceeding 2 x 10(5), the highest Q value reported in resonator structures in chalcogenide glasses to the best of our knowledge. We have successfully demonstrated a lab-on-a-chip prototype sensor device with the integration of our resonator with planar microfluidic systems. The sensor shows a refractive index sensitivity of 182 nm/RIU (refractive index unit) and a wavelength resolution of 0.1 pm through a resonant peak fit. This corresponds to a refractive index detection limit of 8 x 10(-7) RIU at 1550 nm in wavelength, which could be further improved by shifting the operating wavelength to a region where water absorption is reduced.     

溶胶-凝胶法制备SiO2-TiO2平板光波导工艺研究

采用溶胶-凝胶法制备了SiO₂-TiO₂平板光波导,计算了平板光波导通光条件,分析了硅/钛溶胶-凝胶材料的热性能,观测了平板光波导的结构形貌,并测试了其通光损耗。结果表明：经过200℃,30 min干燥处理的凝胶薄膜呈疏松多孔状态,对于非对称平板波导,存在芯层通光截止厚度,而且当SiO₂-TiO₂芯层厚度为0.5 μm时,SiO₂下包层厚度至少有6 μm才能防止1550 nm波长光泄露入单晶硅衬底中。制备的光波导对于1550 nm波长光传输损耗最小值为0.34 dB/cm。     

Achromatic wave plates for optical pickup units fabricated by use of imprint lithography

We report achromatic form-birefringence wave plates for optical pickup units. Material dispersion and structure dispersion are balanced in a rigorous multilayer design. A trilayer grating using SiN(x)/SiO(y)N(z)/SiO2 provides easily accessible process control points and relaxed fabrication tolerance. We demonstrate precise patterning by using nanoimprint lithography on UV-curable polymers, alleviating a major fabrication challenge. The achromatic wave plates exhibit 90+/-3 degrees retardance and >95% transmittance as measured by a Mueller matrix method at wavelengths of 640-800 nm.     

Integrated optics ring-resonator sensors for protein detection

Using an integrated optics ring-resonator biosensor, we have demonstrated the detection of protein in low concentrations. We detected 0.3 nM of avidin in a buffered saline solution; the calculated detection limit is 0.1 nM (6.8 ng/ml) for avidin, which compares favorably with those of other optical protein detection techniques. Further improvement is possible. Our ring resonator utilizes Si(x)N(y)/SiO2 waveguides, which, owing to evanescent field interaction, change the effective refractive index when target molecules are immobilized on their surfaces. The selectivity of the sensor depends on the biotin surface coating, which causes the specific binding and immobilization of avidin.     

Photoemission electron microscopy as a tool for the investigation of optical near fields

Photoemission electron microscopy was used to image the electrons photoemitted from specially tailored Ag nanoparticles deposited on a Si substrate (with its native oxide SiO(x)). Photoemission was induced by illumination with a Hg UV lamp (photon energy cutoff homega(UV) = 5.0 eV, wavelength lambda(UV) = 250 nm) and with a Ti:sapphire femtosecond laser (homega(l) = 3.1 eV, lambda(l) = 400 nm, pulse width below 200 fs), respectively. While homogeneous photoelectron emission from the metal is observed upon illumination at energies above the silver plasmon frequency, at lower photon energies the emission is localized at tips of the structure. This is interpreted as a signature of the local electrical field therefore providing a tool to map the optical near field with the resolution of emission electron microscopy.     

Optical loss measurements in femtosecond laser written waveguides in glass

The optical loss is an important parameter for waveguides used in integrated optics. We measured the optical loss in waveguides written in silicate glass slides with high repetition-rate (MHz) femtosecond laser pulses. The average transmission loss of straight waveguides is about 0.3 dB/mm at a wavelength of 633 nm and 0.05 dB/mm at a wavelength of 1.55 μm. The loss is not polarization dependent and the waveguides allow a minimum bending radius of 36 mm without additional loss. The average numerical aperture of the waveguides is 0.065 at a wavelength of 633 nm and 0.045 at a wavelength of 1.55 μm. In straight waveguides more than 90% of the transmission loss is due to scattering.     

基于夹层结构的偏振无关1×2定向耦合型解复用器的设计

提出一种基于夹层结构的偏振无关1×2定向耦合型解复用器,用于分离1310 nm和1550 nm两个波长.通过合理选择夹层结构芯区的折射率及波导间隙,可以调节同一波长两个正交偏振模的耦合长度相等,实现偏振无关;通过合理选择夹层结构波导宽度,可以使两个波长分别从不同输出波导端口输出,实现解复用功能.运用三维有限时域差分法进行建模仿真,对结构参数进行优化,并对器件性能进行了分析.结果表明:该器件定向耦合波导的长度为23μm,插入损耗低至0.1 dB,输出波导间的串扰低至–26.23 dB,3 dB带宽可达290 nm和200 nm.另外,本文提出的器件采用Si3N4/SiO2平台,可有效减小波导尺寸,提高集成度,不仅实现了偏振无关,而且结构紧凑、损耗低,在未来的集成光路中具有潜在的应用价值.     

2(水杨醛缩苯胺)-(1,10-邻菲罗啉)合钙的光谱特性

合成了一种新型的蓝光发射材料2(水杨醛缩苯胺)-(1,10-邻菲罗啉)合钙,并利用红外光谱、X射线衍射谱、DSC热分析、UV-vis吸收谱、荧光激发光谱和荧光发射光谱研究了其结构、晶态、热稳定性以及光学特性,分析了它的能态结构和发光机理。结果表明,2(水杨醛缩苯胺)-(1,10-邻菲罗啉)合钙的热稳定性较高,是一种多晶粉末发光材料,禁带宽度2.93eV,在紫外光的激发下,固态荧光发射峰在449.7nm处,在乙醇溶液体系中的荧光发射峰在491nm处,均为蓝色荧光,色纯度高,荧光量子效率高,其荧光发射主要来源于长波吸收带,最大波长吸收带对荧光发射贡献最大。     

制备温度对(Mg1-x-yBaxSry)1.95SiO4∶0.05Eu 荧光粉三元相图及色像图的影响研究

采用高温固相法分别在1 150,1 200和1 250 ℃制备(Mg_1-x-yBa_xSr_y)_1.95SiO₄∶0.05Eu荧光粉系列样品,通过XRD、PL和紫外发光照相记录,建立起组分-物相-色像对应关系,推导得到其三元色像图,并探讨制备温度对物相及色像影响。物相分析表明：(Mg_1-x-yBa_xSr_y)_1.95SiO₄∶0.05Eu荧光粉物相组成与组分间存在渐变性,从单组分点出发物相组成数目逐渐增多且各物相含量连续变化,在富Ba2+端形成Ba₂SiO₄相单相区;随着温度升高,Ba₂SiO₄单相区扩大(Mg2+(Sr2+)在1 150,1 200和1 250 ℃固溶度为20_at%(30_at%),30_at%(35_at%), 35_at%(40_at%)),混合相区同一组分点物相组元数减少(若该组分点包含α-Sr₂SiO₄和Ba₂SiO₄相则其含量增加)。光谱分析表明：同一样品在365 nm激发下比254 nm激发下绿光波段荧光发射强但红光光波段发射弱;荧光颜色和亮度也随组分、相组成呈渐变性,Ba₂SiO₄单相区为绿色荧光且随Sr2+和Mg2+固溶荧光亮度提高,在混合相区随着Ba2+含量减少荧光颜色由绿变红,红光区域随着Mg2+减少亮度逐渐减弱[如：(Mg_1-ySr_y)₂SiO₄∶Eu系列随y增大由亮红变成暗红];随着温度升高,Ba₂SiO₄单相区内荧光粉亮度整体提高且最亮荧光粉组分中Mg2+和Sr2+固溶度提高;混合相区荧光强度整体提高,且绿色荧光粉组分区域增大(如：在254 nm激发下,(Mg_1-xBa_x)_1.95SiO₄∶0.05Eu系列由红色变成绿色时x_{1 150 ℃}=0.5,x_{1 200 ℃}=0.4,x_{1 250 ℃}=0.3,(Ba_1-ySr_y)_1.95SiO₄∶0.05Eu系列由绿色变成红色时y_{1 150 ℃}=0.6,y_{1 200℃}=0.7,y_{1 250 ℃}=0.8,(Ba_x(Mg_0.2Sr_0.8)_1-x)_1.95SiO₄∶0.05Eu系列由红色变成绿色时x_{1 150 ℃}=0.5,x_{1 200 ℃}=0.4,x_{1 250 ℃}=0.3)。研究建立了(Mg_1-x-yBa_xSr_y)_1.95SiO₄∶0.05Eu粉体组分-结构(相)-制备(温度)-性能(荧光)对应关系;优选出(Mg_0.35Ba_0.6Sr_0.05)_1.95SiO₄∶0.05Eu/(Mg_0.6Sr_0.4)_1.95SiO₄∶0.05Eu等高效绿色/红色荧光粉;发现单相比混合相绿色荧光粉亮度高,固溶度提高有利于Ba₂SiO₄单相绿色荧光粉效率的提高;温度提高扩大了Ba₂SiO₄单相荧光粉、混合相区绿色荧光粉区域,且提高(Mg_1-x-yBa_xSr_y)_1.95SiO₄∶0.05Eu荧光粉整体亮度。由(Mg_1-x-yBa_xSr_y)_1.95SiO₄∶0.05Eu系列荧光粉得出的色像随组分、温度渐变规律可应用于其他组元荧光粉优选,对新发光材料的系统开发具有一定指导意义。     

All-optical tunability of InGaAsP/InP microdisk resonator by infrared light irradiation

We report the optical characterization of an InP structure constituted by waveguides coupled to microcavity disk resonators. The lateral waveguide confinement is obtained by deep reactive ion etching through the guiding layer. We demonstrate the possibility of tuning optically the resonance wavelength into the illuminating disk resonator. We obtained a blueshift of 3 nm by laser irradiation at 980 nm corresponding to a photoinduced change in the effective refractive index of 6 x 10(-3). The InP structure behaves as a tunable optical demultiplexer.     

Zero-birefringence photosensitive polyimides for optical waveguides

Zero-birefringence (delta n < 1 x 10(-6)) photosensitive fluorinated polyimides are synthesized for use in polymer optical waveguides. To obtain zero birefringence, the UV exposure time and copolymer content of photosensitive polyimides are controlled. Zero birefringence combined with photoprocessing of the material has excellent potential for applications in high-performance wavelength division multiplexing components such as polarization-independent arrayed waveguide gratings and Bragg wavelength filters.     

4H-SiC基底Al_2O_3/SiO_2双层减反射膜的设计和制备

在4H-SiC基底上设计并制备了Al2O3SiO2紫外双层减反射膜,通过扫描电镜(SEM)和实测反射率谱来验证理论设计的正确性.利用编程计算得到Al2O2和SiO2的最优物理膜厚分别为42.0 nm和96.1 nm以及参考波长λ=280 nm处最小反射率为0.09%.由误差分析可知,实际镀膜时保持双层膜厚度之和与理论值一致有利于降低膜系反射率.实验中应当准确控制SiO2折射率并使Al2O3折射率接近1.715.用电子束蒸发法在4H-SiC基底上淀积Al2O3SiO2双层膜,厚度分别为42 nm和96 nm.SEM截面图表明淀积的薄膜和基底间具有较强的附着力.实测反射率极小值为0.33%,对应λ=276 nm,与理论结果吻合较好.与传统SiO2单层膜相比,Al2O3SiO2双层膜具有反射率小,波长选择性好等优点,从而论证了其在4H-SiC基紫外光电器件减反射膜上具有较好的应用前景.     

Synthesis of a fluorinated photoresist for optical waveguide devices

A linear fluorinated bis-phenol-A novolac resin (LFAR) for optical waveguide was synthesized based on 4,4′-(hexafluoro-isopropylidene)diphenol, epoxy chloropropane and formaldehyde. Negative fluorinated photoresist (FP) was made by composing the LFAR, diphenyl iodonium salt and solvent. The film, which was made by spin-coating FP, had good UV light lithograph sensitivity, large hardness and high glass transition temperature (T _g >170°C, after crosslinking). Low-loss optical waveguides with very smooth top surface were fabricated from the resulting FP by direct UV exposure and chemical development. For waveguides without upper cladding, the propagation loss of the channel waveguides was measured to be 0.21 dB/cm at 1550 nm.     

基于荧光玻璃的高效LED白光技术

采用高温熔融法制备了一定质量比例的SiO_2-YAG∶Ce~(3+)片状荧光玻璃,厚度为0.2 mm,分析其XRD物相、光学和SEM微观结构、PL光谱。结果表明:荧光玻璃保留了晶相,荧光粉颗粒在玻璃基质中均匀分布,荧光玻璃和荧光粉的激发响应关系一致。在465 nm蓝光激发下,发射波长均在535 nm附近,表明荧光玻璃除含有玻璃相,还有荧光粉的物质结构特性。将不同波长蓝光芯片与不同荧光粉含量的荧光玻璃进行封装测试,结果表明:器件的流明效率可达到234.81 lm/W;色温和显色指数均随荧光粉含量增加而单调下降,呈现高色温和低显色指数;荧光粉质量分数从6%增加至15%时,不同波长激发下的色坐标x与y呈现大致相同的线性变化率。采用450 nm激光激发荧光玻璃,测试样品温度变化发现温升较缓,温降迅速,耐热性能优越。实验结果表明,将荧光玻璃用于LED白光照明封装,能实现流明效率和耐热性能的大幅提升,形成良好的白光输出。     

Planar Bragg gratings made by excimer-laser modification of ion-exchanged waveguides

The refractive indices of planar silver-ion-exchanged waveguides have been modified by UV excimer laser irradiation (lambda=193 nm) . The effective index changes of the fundamental modes of the waveguides after exposition are as large as 2x10(-2) . The procedure permits the fabrication of integrated optical components in a direct way, with neither the use of standard lithography nor previous sensitizing of the substrate. Optical characterization of the irradiated samples is presented. By the use of appropriate masks, we have fabricated planar Bragg gratings.     

ECR-CVD制备的非晶SiOxNy薄膜的光致蓝光发射

使用90%N2稀释的SiH4与O2作为前驱气体，利用微波电子回旋共振等离子体化学气相沉积（ECR CVD）方法制备了非晶氮氧化硅薄膜（a-SiOxNy）.红外吸收光谱的结果表明，a SiOxNy薄膜主要由Si O Si和Si N键的两相结构组成，在存在氧流量的情形下，薄膜主要成分是SiOx相，而在无氧流量的情形下，薄膜则主要是SiNx相.使用565eV的紫外光激发，发现SiOxNy薄膜出现了位于460nm的光致蓝光主峰，且其发光强度随着氧流量的降低而显著增强.根据缺陷态发光中心和SiNx蓝光发射能隙态模 关键词： ECR CVD 红外吸收光谱 非晶氮化硅薄膜 光致发光     

硅基光波导芯层材料及波导分束器的制备

本文采用溶胶－凝胶法制备了具有紫外感光性的SiO2/ZrO2/H有机无机复合薄膜,利用分光式椭偏仪测得该薄膜在光纤的常用通信窗口0.85 μm、1.31 μm和1.55 μm波长附近折射率分别为1.556 9、1.548 9和1.547 2,与下包层SiO2的折射率（1.46）相比,其折射率差比δ分别为6.64％,6.09％和5.97％,可作为芯层材料用于光波导的制备.通过控制提拉速率可以制作出厚度分别为1.29,2.20,4.00,5.44和6.82 μm的SiO2/ZrO2/H芯层薄膜,以满足0,1,2,3和4阶导模的传输要求.进而利用该薄膜自身的感光特性结合紫外掩模法,制备出相应厚度的1×8Y分支光功率分配器.通光实验表明,该光功分器能够将1.53～1.56 μm波长的光限制在波导内,实现光的传输和分束功能.     

7.5-MHz data-transfer rate with a planar aperture mounted upon a near-field optical slider

We fabricated a planar aperture-mounted (PAM) slider by use of a focused ion beam to demonstrate fast data acquisition for near-field optical data storage. The aperture (200 nm x 500 nm) was formed upon the Ti-coated air-bearing surface of the slider and was directly illuminated with a laser (lambda = 532 nm) beam spot by use of an objective lens (N.A., 0.55). The light transmitted through the aperture was modulated by a Ti-coated SiO(2) disk with 200- and 400-nm-wide line-and-space (L&S) patterns engraved by electron-beam lithography. The optical throughput of the taperless aperture was greater than 0.02. By use of the PAM slider, 400- and 200-nm L&S signals were detected at linear velocities of 6 and 3 m/s, respectively, corresponding to a data-transfer rate of 7.5 MHz.     

Ⅲ–Ⅴ/Si Hybrid Laser Array with DBR on Si Waveguide

We report an eight-channel silicon evanescent laser array operating at continuous wave under room temperature conditions using the selective-area metal bonding technique.The laser array is realized by evanescentl.y coupling the optical gain of InGaAsP multi-quantum wells to the silicon waveguides of varying widths and patterned with distributed Bragg reflector gratings.The lasers have emission peak wavelengths in a range of 1537-1543 nm with a wavelength spacing of about 1.0 nm.The thermal impedances Z_T of these hybrid lasers are evidently lower than those DFB counterparts