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1.
The lowest threshold current of the external-cavity semiconductor laser with fiber Bragg grating using genetic algorithms is investigated. Effects of the external cavity length, coupling efficiency and anti-reflection coating reflectivity on static characteristics, such as L-I curves and side mode suppression ratios (SMSR) are investigated by using multi-mode rate equation. It is found that the reflectivity of the anti-reflection coating for low-threshold performance needs to be increased at the cost of the stability of the fiber grating external-cavity semiconductor laser. The optimal external cavity length obtained by genetic algorithms can be used to obtain the lowest threshold current for sacrificing a little SMSR. However, with the decrease of AR-coating reflectivity, output powers and SMSRs are slightly dependent on the external cavity length.  相似文献   

2.
Effects of system parameters on the side-mode suppression ratio of the fiber grating external cavity semiconductor laser are investigated by the numerical method, and the variation of the side-mode suppression ratio is discussed. It is found that an excellent anti-reflection coating provides the significant reduction of the variation due to the phase shift and the change of the internal cavity length. The laser with the low anti-reflection coating, the high coupling efficiency and the short cavity will exhibit the excellent side-mode suppression ratio.  相似文献   

3.
强反馈光纤光栅外腔半导体激光器   总被引:5,自引:0,他引:5  
安宏林  林祥芝 《光学学报》1997,17(12):609-1613
在理论上对强外腔反馈情形的半导体激光器线宽压窄效应进行了分析,对消反膜剩余反射率,外腔反射率,外腔腔长对线宽压缩的影响进行了研究,在实验上采用光纤光栅作为反馈元件,与一端镀有消反膜的1.5μm波段的常规多纵模交导体激光器耦合,构成强反馈光纤光栅外腔半导体激光器,得到单频窄线宽的激光输出,静态下边模抑制比大于30dB,线宽小于120kHz。  相似文献   

4.
曹士英  朱月  柴路  王清月  张志刚 《物理学报》2009,58(9):6269-6272
采用Nd∶Gd0.1Y0.9VO4晶体作为增益介质和Z形腔结构,分析比较了腔内加入自行设计的镀和不镀高反膜的半导体可饱和吸收镜(SESAM)对激光锁模的影响.在腔内加入镀膜SESAM后,激光锁模阈值由1.69W下降为1.45W,并且锁模更稳定.在2W抽运功率下,在1064nm中心波长处获得了双端250mW的连续锁模输出,光光转换效率为12.5%,重复频率为142.25MHz. 关键词: 0.1Y0.9VO4激光器')" href="#">Nd∶Gd0.1Y0.9VO4激光器 半导体可饱和吸收镜 连续锁模  相似文献   

5.
报道一种新颖的波长可调谐光纤光栅外腔分布拉格反射激光器。把经过金属管封装的光纤面布拉格光栅作为激光二极管的外腔反射镜,得到的单模激光输出不仅线宽窄,边模抑制比高,而且,调节流过金属管的电流,可在5nm范围内的6个不同波长间转换。  相似文献   

6.
光纤光栅外腔半导体激光器(FBG-ECL)在未来光通信系统占有着越来越重要的地位。根据FBG-ECL的等效腔模型,讨论了光纤光栅反射率、带宽对FBG-ECL的输出功率,阈值特性、边模抑制比等静态特性的影响。指出了存在最佳光纤光栅峰值反射率,不仅使得FBG-ECL具有更高的输出功率,而且可以获得极好的边模抑制比。最后根据实测在不同反射率下外腔激光器的激射光谱,发现理论分析结果和实验数据是吻合的。  相似文献   

7.
弱耦合光纤光栅外腔半导体激光器   总被引:2,自引:0,他引:2  
安宏林  林祥芝 《光学学报》1996,16(8):030-1035
报道作者对单频窄宽光纤光栅外腔半导体激光器的一些研究结果。理论上分析了外腔的引入对激光器的阈值增益和光谱线宽的影响,实验上用自行研制的光纤布拉格反射滤波器(FBR)与普通多纵模半导体激光耦合,在1.55μm波段,得到边模抑制比大于25dB,线宽小于60kHz的激光输出。  相似文献   

8.
高丽峰  熊胜明  黄伟  孔明东 《光学学报》2008,28(s1):151-154
根据光腔衰荡光谱技术(CRDS)原理,使用中红外光参变振荡器(OPO)为光源建立了直腔与折叠腔相结合的中红外波段3.6 μm 反射率测量实验装置,用于研究中红外波段的高反射膜反射率,测试精度为10-4。使用直型衰荡光腔测试了三对不同薄膜材料设计镀制的高反射腔镜的反射率,并选择了一对腔镜用于实验装置中。采用该装置精确测试了不同薄膜材料镀制的高反射膜的反射率,包括YbF3/ZnS,YbF3 /ZnSe多层膜,以及由银加保护膜镀制的反射镜。研究表明,中红外波段介质膜的反射率可达到R>0.9990,其中由YbF3/ZnSe镀制在硅基底上的多层介质膜3.6 μm反射率可达到99.96%。  相似文献   

9.
光纤光栅外腔半导体激光器纵模特性研究   总被引:15,自引:3,他引:12  
用速率方程对光纤光栅外腔半导体激光器(FBG-ECL)的静态工作特性进行模拟计算,获得了这些特性同器件结构参数和工作条件的关系。用自行研制的光纤光栅与增透半导体激光器管芯耦合,获得了边模抑制比大于40bB、线宽约为0.1nm的单纵模工作的实验结果,与计算结果基本吻合。  相似文献   

10.
刘文楷  林世鸣  张存善 《物理学报》2002,51(9):2052-2056
采用传输矩阵方法利用半经典的线性色散模型,计算半导体微腔内同时存在重空穴激子、轻空穴激子时,在不同入射角度下的反射谱,同时,利用三简谐振子耦合模型计算了在不同入射角度下,腔模同时和重空穴激子模、轻空穴激子模耦合所形成的三支腔极化激元的能量,以及腔模、重空穴激子模、轻空穴激子模分别在三支腔极化激元中所占的权重,结果表明随着入射角的增加腔极化激元的高能支和两个低能支之间存在明显的反交叉现象,同时,腔模和重空穴激子模、轻空穴激子模在腔极化激元中所占的权重呈现增加或减小的趋势 关键词: 半导体微腔 腔极化激元 激子  相似文献   

11.
The monolithic combination of active light sources with photonic crystal (PC) waveguide components is a key building block for future highly integrated photonic circuits. We demonstrate the coupling of light from an InGaAs/AlGaAs ridge waveguide laser to a monolithically integrated 2D PC waveguide. The PC guide is formed by removing three or five rows in a triangular lattice of air rods etched into the semiconductor. A tapered ridge waveguide geometry is demonstrated to improve coupling efficiency, so that maximum output powers of up to 10 mW from the PC waveguide are achieved. The resulting coupled cavity laser shows single mode emission with side mode suppression ratios > 35 dB over a broad range of injection currents.  相似文献   

12.
The effect of facet reflections and different grating parameters on side-mode suppression ratio in index-coupled distributed feedback lasers without a phase-shift section is analyzed. The effect of uncontrollable facet positions on side-mode suppression ratio is studied when the grating coupling coefficient, the grating filling factor, the grating order, the device length and the facet reflectivities are varied. The single-mode device yield and the facet reflectivities needed for achieving a high yield are evaluated, the reflectivity of the anti-reflection coated facet is optimized as a function of the coupling strength and the effect of facet reflections on the other laser characteristics is shown.  相似文献   

13.
双光纤光栅外腔半导体激光器相干失效研究   总被引:1,自引:0,他引:1       下载免费PDF全文
根据双光纤Bragg光栅(FBG)外腔半导体激光器相干失效的物理过程, 运用速率方程和双FBG耦合模理论, 分析了双FBG外腔半导体激光器相干失效产生和控制的条件, 提出了实现和控制双FBG外腔半导体激光器相干失效多模稳定工作的方法. 双FBG外腔半导体激光器在相干失效下具有多模的稳定工作状态, 相干失效长度缩短, 相干失效长度内光谱稳定. 实验测量结果表明, 外腔反射率为3%时, 从非相干失效状态到相干失效状态, 半峰值全宽度从0.5 nm突然展宽到0.9 nm. 在相干失效状态下, 功率稳定, 边模抑制比大于45 dB, 在0℃–70℃工作温度范围内峰值波长漂移小于0.5 nm, 最小相干失效长度小于0.5 m. 双FBG外腔半导体激光器相干失效的应用对提高光纤放大器和光纤激光器的性能具有重要意义. 关键词: 非线性 半导体激光器 双光纤Bragg光栅 相干失效  相似文献   

14.
Surface-emitting distributed feedback quantum-cascade lasers operating at λ≈7.8 μm are demonstrated. The metal-covered second-order grating is shallow-etched into the surface of a thin InGaAs contact and cladding layer. This forms a hybrid waveguide and used to achieve relatively low waveguide losses and high coupling strengths. The devices exhibit stable single-mode operation from 90 to 130 K with a side mode suppression ratio above 20 dB. A slope efficiency of 194 mW/A is obtained at 90 K, which is twice higher than that of the Fabry-Perot counterpart.  相似文献   

15.
设计并研究了一种工作于2 μm波段的GaSb基亚波长高对比度光栅反射镜,其具有低折射率光栅层结构。通过严格耦合波理论优化结构,以最大限度地满足VCSEL腔面反射镜对反射率带宽的要求。反射镜对2 μm波段的TM模式具有优良的反射效率,带宽与设计波长之比达15%(反射率R>99%),在反射率R>99.9%的部分Δλ/λ0>9.5%,带宽中心波长为2.003 μm,与此同时TE模的反射率不超过70.20%。该反射镜结构中几个参数的制作容差较大,且厚度低于1.1 μm,有利于在垂直腔面发射半导体激光器上的单片集成。  相似文献   

16.
We report a type-I Ga Sb-based laterally coupled distributed-feedback(LC-DFB) laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio(SMSR) as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature(uncoated facet). A low threshold current density of 230 A/cm~2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.  相似文献   

17.
短腔Er/Yb光纤光栅激光器   总被引:2,自引:0,他引:2  
报道采用光敏Er/Yb 光纤制作短腔Er/Yb 光纤光栅激光器的实验结果。激光谐振腔由一对直接写在30 m m 长的Er/Yb 光纤上、长度分别为6 m m 及10 m m 、反射率分别为90% 及98.6% 、3 dB带宽分别为0.28 nm 及0.26 nm 的光纤布拉格光栅组成, 激光器的泵浦阈值为8m W, 斜效率约14% , 输出光的信噪比为61 dB, 偏振模抑制比为30 dB。  相似文献   

18.
曾美玲  蔡金良  易早  秦风  邝向军 《强激光与粒子束》2021,33(4):043004-1-043004-10
核电磁脉冲和高功率微波等强电磁脉冲易造成电子设备功能失效甚至损毁,在实际工程实施中用金属腔体对电子设备进行屏蔽是常用的强电磁脉冲抑制手段。基于电磁仿真计算,对含矩形孔缝金属腔体的强电磁脉冲耦合特性进行了系统研究,阐述了孔缝宽长比、腔体尺寸等因素对多种不同类型强电磁脉冲(核电磁脉冲、宽带高功率微波、窄带高功率微波)作用下腔体内耦合场的影响;并以此为基础,重点分析了强电磁脉冲与含孔缝金属腔体之间的作用机制。研究结果表明:不同类型强电磁脉冲耦合信号差异明显,金属腔体对强电磁脉冲的响应是腔体谐振模式、孔缝谐振频率与强电磁脉冲共同作用的结果;当腔体谐振模式、孔缝谐振频率在强电磁脉冲的带内时,腔体内部的耦合场会出现增强效应;特别地,腔体与孔缝间的相互作用还可造成腔体与缝隙的谐振频率发生偏移。因此,在为电子设备设计金属屏蔽外壳时,应基于不同强电磁脉冲的频带范围,对腔体与孔缝的尺寸进行综合设计,抑制腔体、孔缝谐振及谐振频率偏移,提升其强电磁脉冲防护性能。  相似文献   

19.
We establish a novel method of controlling the transverse modes of vertical cavity surface emitting lasers(VCSELs)to achieve 1 mW single-fundamental-mode lasing. A dielectric mode filter is installed on top of the VCSEL. The dielectric layer(SiO_2) is deposited and patterned to modify the mirror reflectivity across the oxide aperture via antiphase reflections.This mode selection is nondestructive and universally applicable for other structures under single transverse mode. Destructive etching techniques(dry/wet) or epitaxial regrowth are also not required. This method simplifies the preparation process and improves the repeatability of the device. Measurements show that under continuous-wave current injection, the side-mode suppression ratio exceeds 30 dB.  相似文献   

20.
In this paper, a new implementation of the double exposure method for fabricating apodized fiber Bragg gratings by controlling the parameters of rotation stage and the number of UV-shots is presented. As a result, the average refractive index is kept nearly constant along the Bragg grating, and various apodized fiber Bragg grating with high reflectivity and high side lobe suppression ratio have been fabricated in single-mode hydrogen-loaded photosensitive fiber . The achieved side-lobe suppression ratio is larger than 25 dB.  相似文献   

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