Theoretical analysis for the nonlinear frequency-selective joint-transform correlator

The theoretical analysis for a nonlinear and bipolar frequency-selective joint-transform correlator is reported without any impractical assumptions and verifield. The theoretical results are similar to those for a nonlinear and bipolar joint-transform correlator. In addition, the optimal threshold value for a bipolar frequency-selective joint-transform correlator is found to be zero. Moreover, a bipolar frequency-selective joint-transform correlator can provide a phase-only correlation signal with delta-function shape. The theoretical study for a DC-block bipolar frequency-selective joint-transform correlator is also given. It is shown that its autocorrelation peak remains the same as that without a DC block.     

基于Boost闭环控制的恒峰值双极性脉冲发生器的研制北大核心CSCD

在肿瘤消融、污水处理等领域的脉冲功率技术应用中,研究发现双极性电脉冲往往比单极性电脉冲效果更佳,这极大地刺激了双极性高压脉冲电源的研发需求。设计了一台基于Boost闭环控制的恒峰值双极性脉冲发生器,该发生器结合boost电路与Marx发生器的特点,实现了具有升压功能的双极性脉冲的产生,且利用峰值检测电路对双极性脉冲发生器的输出峰值进行取样,并反馈到DSP处理器,实现峰值电压闭环控制,从而实现双极性脉冲恒定峰值的输出。为了验证提出的拓扑电路的可行性与稳定性,对5级恒峰值双极性脉冲发生器进行了仿真和实验研究。实验结果表明,当输入电压在100 V时,可产生重复频率5 kHz、脉冲宽度5~10μs、电压幅值为±2.0 kV的恒峰值双极性脉冲波形。该脉冲电源使用模块化设计,便于级联,结构紧凑,可灵活输出恒峰值的双极性或单极性正(负)脉冲。     

Blumlein双极脉冲形成线

 为了提高超宽带系统的辐射因子,对超宽带脉冲整形技术进行了深入研究,介绍了采用Blumlein线产生双极脉冲的高功率双极脉冲产生技术。对采用Blumlein线产生双极脉冲的原理进行了讨论,通过数值模拟分析了影响双极脉冲形成的主要因素。设计了一套Blumlein高功率双极脉冲形成线,在800 kV脉冲源上开展了高压实验研究,分析了开关及形成线长度对形双极脉冲的影响。在输入单极脉冲电压为652.0 kV、脉宽为2.1 ns的情况下,Blumlein双极脉冲形成线可以产生负峰电压为571.9 kV、正峰电压为550.4 kV、半周期为740 ps的双极脉冲,峰-峰值电压是入射脉冲峰值电压的1.72倍,辐射因子为4.54 MV。     

双极性固态直线变压器驱动器的研制

在针对脉冲电磁场肿瘤消融的应用场合,双极性脉冲比单极性脉冲效果更均匀,而要产生ns级前沿的双极性高压纳秒或亚微秒脉冲难度大,电磁干扰强,控制要求更高。设计了一台双极性全固态直线型变压器驱动源(SSLTD),双极性SSLTD由结构完全相同的LTD模块经过副边绕组反向串联构成,在负载上实现双极性窄脉冲。双极性SSLTD输出波形稳定的脉冲的关键在于磁芯复位,通过电阻负载实验,重点对比分析了复位电流的形式对复位效果的影响,以及采用直流复位时幅值、脉宽、正负脉冲时间间隔、单级模块中开关管并联数量、复位电流大小对双极性SSLTD输出的影响。实验结果表明,所设计的双极性SSLTD能够在500 Ω负载上稳定产生重频双极性纳秒脉冲,输出电压0～±5 kV可调,脉宽200～400 ns可调,正负脉冲时间间隔0～1 ms可调,上升沿和下降沿20～50 ns;反向串联的直流复位电路结构简单、复位效果好。该脉冲源使用模块化设计,结构紧凑,电气绝缘要求较低,可灵活输出双极性、正极性与负极性高压亚微秒脉冲。     

Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients

The contribution of parasitic bipolar amplification to SETs is experimentally verified using two P-hit target chains in the normal layout and in the special layout. For PMOSs in the normal layout, the single-event charge collection is composed of diffusion, drift, and the parasitic bipolar effect, while for PMOSs in the special layout, the parasitic bipolar junction transistor cannot turn on. Heavy ion experimental results show that PMOSs without parasitic bipolar amplification have a 21.4% decrease in the average SET pulse width and roughly a 40.2% reduction in the SET cross-section.     

Approach to all-optical bipolar direct-sequence ultrawideband coding

An approach to all-optical bipolar direct-sequence ultrawideband (UWB) encoding for multiple access communications is proposed and demonstrated. The bipolar coding is performed based on electro-optic phase modulation and phase modulation to intensity modulation (PM-IM) conversion in a fiber Bragg grating (FBG) array that serves as a multichannel frequency discriminator. The chip number and the chip period of the code are determined by the number of FBGs and their physical separation. By locating the optical carriers that carry a Gaussian pulse at the left or right slopes of the FBG reflection spectra, bipolar direct-sequence UWB codes are generated. A bipolar UWB coding system with a code length of 4 is experimentally demonstrated.     

Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusions.     

采用发射极非均匀指间距技术改善功率异质结双极晶体管热稳定性的研究

为了提高多发射极功率异质结双极晶体管的热稳定性,本文利用耦合热阻表征发射极指间距变化对发射极指间热耦合作用的影响,得到了耦合热阻与发射极指间距之间的变化关系,提出了发射极非均匀指间距技术.通过热电反馈模型对采用发射极非均匀指间距技术的功率HBT进行热稳定性分析,得到了多发射极指上的温度分布.结果表明,多发射极HBT在采用非均匀发射极指间距技术后,峰值温度明显下降,温度变化幅度更加平缓,有效地提高了器件的热稳定性. 关键词： 异质结双极晶体管 耦合热阻 指间距     

Parasitic bipolar amplification in a single event transient and its temperature dependence

Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.     

Study on the deterioration process of bipolar coating using electrochemical impedance spectroscopy

A bipolar coating, which is composed of inner layer epoxy with nano SiO₂ modified by cetyltrimethylammonium bromide (CTAB) (containing positive fixed charge) and outer layer epoxy with nano SiO₂ modified by sodium dodecylbenzenesulfonate (SDBS) (containing negative charge), was prepared in this paper. Its deterioration process after exposure to 5% KCl solution was also studied by EIS measurement and SEM observation. The results indicate that the impedance module of the bipolar coating is about 1E+9 ohm after a longer time immersion period. The bipolar coating has a better anti-corrosion capacity than that of epoxy coating. The cation-selective outer layer in bipolar coating inhibits the aggressive anion, such as Cl⁻ ion, passing through the outer coating. Similarly, the anion-selective inner layer inhibits the metal cation passing through the inner coating. Thus the bipolar coating can protect the metal substrate from corrosion effectively. The p-n junction of bipolar coating, which has great charge storage ability, is the key factor in the anti-corrosion capacity of bipolar coating.     

中带电压法分离栅控横向pnp双极晶体管辐照感生缺

设计并制作了一种新型双极测试结构,即在常规横向pnp双极晶体管基区表面氧化层上淀积一栅电极,通过扫描栅极所加电压,获得漏极(集电极)电流随栅极电压的变化特性,利用中带电压法分离栅控横向pnp双极晶体管 在辐照过程中感生的氧化物陷阱电荷和界面陷阱电荷.本文对设计的晶体管测试结构和采用 的测试方法做了具体介绍.     

Designing power heterojunction bipolar transistors with non-uniform emitter finger lengths to achieve high thermal stability

With the aid of a thermal-electrical model,a practical method for designing multi-finger power heterojunction bipolar transistors with finger lengths divided in groups is proposed.The method can effectively enhance the thermal stability of the devices without sacrificing the design time.Taking a 40-finger heterojunction bipolar transistor for example,the device with non-uniform emitter finger lengths is optimized and fabricated.Both the theoretical and the experimental results show that,for the optimum device,the peak temperature is lowered by 26.19 K and the maximum temperature difference is reduced by 56.67% when compared with the conventional heterojunction bipolar transistor with uniform emitter finger length.Furthermore,the ability to improve the uniformity of the temperature profile and to expand the thermal stable operation range is strengthened as the power level increases,which is ascribed to the improvement of the thermal resistance in the optimum device.A detailed design procedure is also summarized to provide a general guide for designing power heterojunction bipolar transistors with non-uniform finger lengths.     

New insight into the parasitic bipolar amplification effect in single event transient production

In this paper, a new method is proposed to study the mechanism of charge collection in single event transient (SET) production in 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect (bipolar effect) in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the substrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P⁺-well layer and can be removed by a buried SO₂ layer.     

Chopping-peaking开关形成高功率超宽带双极脉冲的实验研究

 设计研制了一种chopping-peaking组合开关型高功率双极脉冲形成装置，通过调节两个开关的导通时刻来得到不同形状的双极脉冲。理想情况下，形成的双极脉冲电压峰-峰值等于入射脉冲峰值电压的2倍，实验中入射脉冲峰值电压为205kV的单极脉冲，获得了最大峰-峰电压为360kV的双极脉冲，是入射脉冲峰值电压的1.76倍。双极脉冲的持续时间可以改变，最大值为单极脉冲的脉宽。入射脉冲上升时间越小，得到的双极脉冲峰-峰电压就越大。     

带有n+深阱的三阱CMOS工艺中寄生NPN双极效应及其对电荷共享的影响

基于三维TCAD器件模拟, 研究了带有 n⁺深阱的90 nm三阱CMOS器件在重离子辐照下产生的电荷共享效应. 研究结果表明在重离子辐照时, n⁺深阱会导致寄生的NPN双极型晶体管触发, 显著增强NMOS间的电荷共享, 其放大因子达到双阱工艺中寄生PNP晶体管放大因子的2---4倍. 进而分别研究了n阱接触和p 阱接触对寄生NPN双极放大的影响, 结果表明增大p阱接触的面积和减小 n 阱接触的距离将抑制NPN晶体管的放大作用, 而增大n 阱接触的面积将增强NPN的放大作用.     

不同顺序中子/γ辐照对双极器件电流增益的影响

利用CFBR-Ⅱ快中子反应堆(中国第二座快中子脉冲堆)和60Co装置开展不同顺序的中子/γ辐照双极晶体管的实验。在集电极-发射极电压恒定条件下,测量了双极晶体管电流增益随集电极电流的变化曲线,研究不同顺序中子/γ辐照对双极晶体管电流增益的影响。分析实验结果发现,集电极-发射极电压一定时,集电极电流极低情况下电流增益退化比较大,随集电极电流增加电流增益逐渐减小;就实验选中的两类晶体管而言,先中子后γ辐照造成双极晶体管电流增益的退化程度大于先γ后中子辐照,而且PNP型晶体管比NPN型晶体管差异更明显。本文进行了双极晶体管电离/位移协同辐照效应相关机理的初步探讨。     

Parasitic bipolar amplification in single event transient and its temperature dependence

Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in single event transient (SET) current of single transistor and its temperature dependence are studied. We quantify the contributions of different current components in SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of single transistor.     

低温LBJT性能表征

作为集成电路的重要组成器件,双极结型晶体管在高速高频等方面有着互补金属氧化物半导体不能替代的优点.由于常规双极结型晶体管在低温环境中增益骤降,器件性能大幅衰减,故双极结型晶体管低温性能的研究较少且仅限于77K以上的温度.本文对在绝缘体上硅衬底上制造的与CMOS工艺相兼容的对称水平双极结型晶体管进行了4.2～300K宽温...     

硅双极器件及电路电离总剂量辐照损伤研究

针对硅双极器件及其构成的双极集成电路有着如低剂量率辐照损伤增强效应等不同于其他类型电路的特殊的辐照响应问题, 分析了空间辐射电离总剂量环境及铝屏蔽作用, 双极晶体管及电路总剂量辐照损伤机理, 低剂量率辐照损伤增强效应、规律和电参数变化。通过选取几种典型的双极晶体管和电路进行地面辐照模拟试验和测试, 证明了双极器件及电路的关键参数受辐照影响较大, 特别是对低剂量率辐照损伤增强效应敏感, 低剂量率辐照损伤增强因子基本都大于1.5, 不同双极器件和电路的低剂量率辐照损伤增强效应有着明显的不同, 与器件类型、加工工艺(如氧化层厚度)等密切相关。     

Forward masking patterns produced by intracochlear electrical stimulation of one and two electrode pairs in the human cochlea

Three psychophysical forward masking studies were conducted on a multichannel cochlear implant patient. The first study investigated the masking pattern produced by a bipolar electrode pair at different stimulus currents. It was found that the masking pattern for a single-masker bipolar electrode pair had a maximum located at an electrode position where the masker and probe coincided. The spread of the masking pattern was not symmetrical about the maximum. The amount of masking decreased very rapidly toward the apical direction and less rapidly toward the basal direction from the position of the maximum. As the stimulus current increased, the amount of masking at the maximum increased and the masking pattern broadened toward the base. The second study investigated the masking pattern produced by the activation of single bipolar electrode pairs with different spatial extents. The spatial extent of a bipolar electrode pair is defined as the distance between the apical and basal electrode members of the bipolar pair. With a small spatial extent (1.5 mm), the more basal electrode pairs (higher threshold and smaller dynamic range) produced broader masking patterns than the more apical electrode pairs (lower threshold and wider dynamic range), suggesting that there was more current spread at the basal region. With a larger spatial extent (4.5 mm), an additional secondary masking maximum was observed in the vicinity of the apical electrode member of the masker; this was observed only when the apical electrode member lay within the low-threshold apical region. The third study investigated the masking patterns produced by two loudness balanced bipolar masker electrode pairs activated within a stimulus period (inverse of the pulse repetition rate). The biphasic current pulses delivered to the two electrode pairs were nonoverlapping in time. It was found that, at any probe electrode position, the amount of masking produced by the two combined bipolar electrode pairs approximately followed the greater of the two maskings produced respectively by the two individual bipolar masker electrode pairs.