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New insight into the parasitic bipolar amplification effect in single event transient production |
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| Authors: | Chen Jian-Jun Chen Shu-Ming Liang Bin and Deng Ke-Feng |
| Affiliation: | School of Computer Science, National University of Defense Technology, Changsha 410073, China;School of Computer Science, National University of Defense Technology, Changsha 410073, China;School of Computer Science, National University of Defense Technology, Changsha 410073, China;School of Computer Science, National University of Defense Technology, Changsha 410073, China |
| Abstract: | In this paper, a new method is proposed to study the mechanism of charge collection in single event transient (SET) production in 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect (bipolar effect) in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the substrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P+-well layer and can be removed by a buried SO2 layer. |
| Keywords: | parasitic bipolar amplification effect (bipolar effect) single event transient substrate process |
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