高剂量与高能量离子注入研究进展

综述了离子束材料实验室在高剂量与高能量离子注入研究方面的新进展，包括高剂量离子注入动态靶的模拟计算了ＭＡＣＡ程序，多能离子注入深度分布计算，ＭｅＶ离子引起的ＨＯＰＧ表面损伤，ＭｅＶ离子诱变右旋糖酐生产菌种，高剂量离子注入在４５号钢表面形成耐腐蚀的保护层以及高速工具钢上形成含有大量超细碳化物的耐磨层。     

离子注入对黑松花粉粒细胞核的损伤效应

利用激光扫描共聚焦显微技术和碱性单细胞凝胶电泳技术对经过离子注入后的黑松花粉粒内细胞核的直接损伤效应进行了观察鉴定。 研究结果表明, 离子注入后可以直接损伤细胞核结构, 导致细胞核裂解。 细胞核的损伤程度与注入离子的剂量密切相关, 即细胞核DNA分子的损伤程度随着注入离子剂量的增加而提高。 The damage of pollen nuclei of Pinus thunbergii induced directly by ion implantation were measured by the laser confocal microscopy technique and the single cell gel electrophoresis test. The results showed that ion implantation caused the nuclei structure to be damaged, leading to the nuclei degradation. The results of statistical analysis showed that the damage grade of nuclei was very correlative with the ion dosage. The damage degree of DNA in the nuclei at the level of single cells was increased with the increase of the ion implantation dose.     

MeV高能离子注入Si的研究

综述了近年来低能核物理所开展ＭｅＶ高能离子注入Ｓｉ的研究概况．研究工作包括深注入掩埋层物理特性分析,新型增强退火研究,二次缺陷的抑制与消除,离子束缺陷工程新原理、新方法的建立和应用,注入杂质的叠加分布与计算等． This paper presents a briefing of the development of implanted silicon with MeV high energy ion at the BNU of late years. A lot of subjects are reviewed.     

重离子束注入与生物体的相互作用及遗传诱变的分子机制

低能重离子与生物体系相互作用及其生物诱变效应的应用研究在我国率先兴起， 并在应用中取得了很大的成就。 介绍了重离子注入与生物有机体的相互作用及其主要的生物学效应， 包括细胞染色体水平、 生理生化效应， 以及对DNA损伤修复、 基因表达、 甲基化修饰的影响。 总结了离子注入诱变的分子遗传学机理的相关研究。 同时分析、 比较讨论了高能与低能离子、 离子束与射线的生物学效应的异同。 提出了离子注入今后的研究方向， 特别指出了离子注入对生物基因表达影响研究的重要性。 As a new mutagenesis technique, low energy heavy ion implantation started in China for the study of interaction effect between incident ions and organism, and great achievements have been obtained in crop breeding. The article reviewed the main biological effects induced by heavy ion implantation, including physiology, biochemistry and genetics effects, on levels of cell and chromosome, gene expression, DNA methylation, DNA damage and reparation etc. It compared the differences in mutagenesis for organism by high energy and low energy ion implantation, as well as γ ray radiaiton. Future investigation topics were proposed, the emphasis of researches in future was pointed out, i.e., the molecular mechanism and effects of gene differential expression of organism treated by ion implantation.     

低能Co离子注入单晶ZnO的光致发光特性

采用离子注入法研究了Co离子注入ZnO晶体的光致发光效应。 对离子注入后的样品在Ar气保护下进行退火处理, 退火温度为700 ℃, 退火时间为10 min, 在其光致发光谱中观察到了406和370 nm的紫光发射峰。 对比了Co, Cu离子分别注入的ZnO晶体的光致发光谱, 观测到二者的光致发光谱类似。 同时, 研究了Co离子注入剂量对样品发光性质的影响, 结果表明随注入剂量的增加绿色发光中心逐渐向低能边偏移, 分析认为绿色发光中心的偏移与离子注入后ZnO晶体的禁带宽度发生改变相关。 In this paper, ion implantation techniques were used to study the photoluminescence(PL) of the Co implanted crystal ZnO. After Co ion implanted, the samples were annealed at 700 ℃ for 10 min in Ar gas flow. It was observed violet emission peak of 406 and 370 nm in the PL spectrum. The PL spectra of the ZnO crystal samples which were implanted by Co ions and Cu ions, respectively, have been compared and observed that the PL spectrum of the Co implanted ZnO is similar to that of the Cu implanted ZnO. We studied the influence of implantation dose on the PL of the Co implanted ZnO and found that the green luminescence centre shifted with increasing of implantation dose. It is concluded that the shift of the green luminescence centre is related to the change of ZnO band gap which was caused by ion implantation.     

MEVVA源离子注入金属表面优化应用

针对几种钢部件的磨损、耗能问题，本课题组应用ＭＥＶＶＡ源离子注入技术，对Ｈ１３、Ｔ１０Ａ、ＨＳＳ、Ｃｒ１７等钢材料进行了离子注入表面改性研究，得出了提高钢耐磨性和改善其固体自润滑的一套有用的离子注入工艺． Ion implantation with MEVVA source has been investigated on several types of steel such as H12,T10,HSS,Cr17 and so on,and the real industrial parts have been tested too...     

高分子材料辐射改性

总结了作者关于电离辐射和离子注入技术在工程塑料、生物医用高分子材料改性研究方面的最新成果.The study on some applications of γ irradiation and ion implantation technology in modification of polymeric materials is briefly summerilzed. The main results obtained recently in our lab. on modification of engineering plastics, bioengineering and biomedical polymers by γ irradiation and biomedical materials by ion implantation are given.     

阴极真空弧离子源的研制

为发展金属离子束材料表面改性技术的工业应用，北师大低能核物理所研制成阴极真空弧离子源和离子注入装置．简要介绍该设备的结构、原理和性能． The cathode vacuum arc ion source and ion implantation facility have been developed in our institute for industrial application of surface modification of materials. In this paper the principle structure and performance of these facilities were described.     

强流金属离子束材料表面改性研究

综合评述了本课题组在金属离子注入钢强化机理、表面摩擦学、抗磨损特性、离子注入表面热化学效应、硅化物合成、表面抗氧化和抗腐蚀研究中所取得的新的实验结果． A review of our research work is given in this paper. It is about strengthening mechanism; surface trobology; resistance in wear, oxidation and corrosion; thermal atom chemistry in steel during ion implantation; silicides synthesis.     

激光驱动高亮度电子束源

采用激光驱动光阴级和１００ｋＶ直流加速间隙可产生宽度为５０～１００ｐｓ的高亮度脉冲电子束．该装置主要由光阴极制备室和直流加速间隙组成．可以用化学气相沉积、离子注入和离子束增强沉积等方法制备光阴极．通过用ＥＧＵＮ和ＰＯＩＳＳＯＮ程序模拟,给出了直流加速间隙的物理设计．光源采用一台主被动双锁的Ｎｄ:ＹＡＧ激光器,可工作在１０６４、５３２和２６６ｎｍ三个波长,重复频率为１０Ｈｚ．此外,也论述了光阴极制备室与超与腔结合的超导高亮度注入器的有关问题. A DC high brigytness laser driven by photoemissive electron gun is being developed at Peking University,in order to produce 50～100ps electron bunches of high quality.The gun consists of a photocathode preparation chamber and a DC acceleration cavity.Different ways of fabricating photocathode,such as chemical vapor deposition,ion beam implantation and ion beam enhanced deposition,can be adopted.The acceleration gap is designed with the aid of simulation codes EGUN and POISSON,100kV DC high voltage is...     

Ion Implantation on Ultra High Molecular Weight Polyethylene (Uhmwpe) for Medical Prosthesis

In order to improve the wear resistance of ultra high molecular weight polyethylene (UHMWPE), a surface modification is induced by ion implantation of different ions at 300 keV energy with doses ranging between 10¹⁴ -10¹⁷ ions/cm². Wear measurements, in terms of weight loss, are performed with a “pin on disc” friction machine; these tests measure the wear properly of the UHMWPE against a metallic probe before and after the ion implantation treatment. Results demonstrate that in the implanted samples the wear resistance increases by about 76% with respect to the non-irradiated samples. The irradiated polymeric layer was characterized with the mass quadrupole spectrometry, Raman spectroscopy, infrared absorption analysis, scanning electron microscopy, atomic force microscopy and calorimetric analysis. The results suggest that wear decrease effect can be attributed to the ion bombardment inducing a high carbon surface concentration and cross-linking effects in the irradiated polymeric layer. The irradiated UHMWPE surfaces find special applications in the field of the mobile prosthesis such as hip joints.     

Surface Modification of W9Cr4V2Mo High Temperature Bearing Steel by Rare Earth Ion Implantation

Wear and corrosion are the main failure mechanisms of bearings and some measures have been proposed to prolong the working lifetime. Possible approaches include the use of more expensive materials, ion implantation, surface finish enhancement, and ion beam assisted deposition. Among them ion implantation is used extensively for the modification of surface and properties of materials and many studies have disclosed that the beating steel surface can be strengthened by ion implantation of different elements such as N, Mo, N and Mo, and so on.     

High throughput ion implantation systems in western electric

Within Western Electric, a number of high throughput systems have been developed to meet the differing needs of high voltage and low voltage ion implantation applications. The PR-500 is a general purpose 500 kV machine which provides typical target currents of 0.5 ma of the common dopants and throughputs of 100 75-mm wafers/hour. The PR-200 is a 200 kV machine with typical target currents of 2.5 ma P, As, and Sb, and 1.0 ma B, and wafer throughputs of 150/hour. The PR-30 is a 30 kV single-species machine which can perform predeposition implants at rates of up to 450 wafers/hour. Typical PR-30 target currents are 5 ma P, As, and Sb. and 1.5 ma B. Each of these systems makes use of a common family of high current ion sources, and a rotating disk mechanical scanning system which permits a minimum implant time for 1 % uniformity of two seconds per wafer.     

高频ECR离子源的最新进展

As they are first optimized for their ion losses,ECRISs are always under a fundamental compromise: having high losses and strong confinement at the same time.To help ECR ion source developers in the design or improvement of existing machines,general comments are presented in a review article being soon published. In this 160 pages contribution,fundamental aspects of ECRISs are presented,with a discussion of electron temperature and confinement and ion confinement.Then,as microwaves play a key role in these machines, a chapter presents major guidelines for microwave launching and coupling to ECR plasma.Moreover,once ECR plasma is created,understanding this plasma is important in ion sourcery;and a section is dedicated to plasma diagnostics with an emphasis on the determination of electron and ion density and temperature by vacuum ultraviolet(VUV)spectroscopy.Another chapter deals with the role of magnetic confinement and presents updated scaling laws.Next chapter presents different types of ECRISs designed according to the main parameters previously described.Finally,some industrial applications of ECRISs and ECR plasmas in general are presented like ion implantation and photon lithography.Some hints taken from this review article are presented in the following article.     

用于材料表面改性的多功能等离子体浸没离子注入装置

详细叙述了新近研制的多功能等离子体浸没离子注入（ＰⅢ）装置，在装置设计中，考虑了等离子体产生手段、高压脉冲电源和真空抽气系统多项功能要求，把离子注入、涂敷和溅射沉积结合起来，该已实现了多种气体等离子体注入、气－固离子混合与注入、金属等离子体沉积与注入、离子束混合与离子束增强沉积等，以满足不同材料制成的不同零件对多种表面处理工艺的需要，初步应用结果证明，该装置对于改进４５号钢、Ｔｉ－６Ａｌ０－４Ｖ和     

LZ-50离子注入装置及其在材料表面改性中的应用

本文叙述了LZ-50离子注入装置及其在材料表面改性中的应用。该装置离子能量80keV,氮离子束流强～10mA,注入面积～200cm~2,性能稳定,重复性好,可长期稳态运行。利用该装置对硬质合金、工具钢、钛合金、陶瓷及其它有色金属材料进行了氮离子注入实验,并取得了一些有应用价值的工艺结果,如离子注入使Co-WC机械夹固刀片的耐磨性能提高2—4倍。     

用拉曼光谱测量离子注入引起的晶格应变

 对于10个周期的AlAs/GaAs超晶格和25个周期的GaAs/Ga0.92In0.08As超晶格,在室温下进行0.28 MeV的Zn＋注入,注入剂量为5×10¹³~5×10¹⁴ cm^-2。通过拉曼光谱测量,定量地分析了由于离子注入所引起的晶格内应变。实验结果表明：在所选用的注入剂量下,由于离子注入引起的应变小于体材料GaAs的最大非驰豫应变值0.038,说明该注入条件下,注入区的结晶态仍然保持得比较好。在较高注入剂量下应变达到饱和,说明缺陷的产生和复合达到了平衡,从而形成了均衡的应变场分布。     

High superconducting transition temperatures in the palladium-noble metal-hydrogen system

High superconducting transition temperatures, T_c, of 16.6, 15.6 and 13.6 K have been observed in Pd-(Cu, Ag and Au) alloys, charged with large amounts of H by means of ion implantation at liquid Helium-temperatures. A peculiar phase-transition indicates that weak phonon modes might be responsible for the high T_c-values. The difference between the maximum T_c-values can be described as a type of isotope effect T_c∞M ^?1/2.