首页 | 本学科首页   官方微博 | 高级检索  
     检索      

激光驱动高亮度电子束源
引用本文:赵夔,耿荣礼,王莉芳,张保澄,于进,吴根法,王彤,宋进虎,陈佳洱.激光驱动高亮度电子束源[J].原子核物理评论,1996,13(2):28-30.
作者姓名:赵夔  耿荣礼  王莉芳  张保澄  于进  吴根法  王彤  宋进虎  陈佳洱
作者单位:北京大学重离子物理研究所
摘    要:采用激光驱动光阴级和100kV直流加速间隙可产生宽度为50~100ps的高亮度脉冲电子束.该装置主要由光阴极制备室和直流加速间隙组成.可以用化学气相沉积、离子注入和离子束增强沉积等方法制备光阴极.通过用EGUN和POISSON程序模拟,给出了直流加速间隙的物理设计.光源采用一台主被动双锁的Nd:YAG激光器,可工作在1064、532和266nm三个波长,重复频率为10Hz.此外,也论述了光阴极制备室与超与腔结合的超导高亮度注入器的有关问题. A DC high brigytness laser driven by photoemissive electron gun is being developed at Peking University,in order to produce 50~100ps electron bunches of high quality.The gun consists of a photocathode preparation chamber and a DC acceleration cavity.Different ways of fabricating photocathode,such as chemical vapor deposition,ion beam implantation and ion beam enhanced deposition,can be adopted.The acceleration gap is designed with the aid of simulation codes EGUN and POISSON,100kV DC high voltage is...

关 键 词:高亮度电子束    光阴极    超导腔
收稿时间:1900-01-01

High brightness Electron Source Driven by Laser
Zhao Kui,Geng Rong-li,Wang Li-fang,Zhang Bao-cheng,Yu Jin,Wu Gen-fa,Wang Tong,Song Jin-hu,Chen Jiaer.High brightness Electron Source Driven by Laser[J].Nuclear Physics Review,1996,13(2):28-30.
Authors:Zhao Kui  Geng Rong-li  Wang Li-fang  Zhang Bao-cheng  Yu Jin  Wu Gen-fa  Wang Tong  Song Jin-hu  Chen Jiaer
Institution:(Institute of Heavy Ion Physics; Peking University; Beijing, 1000871);
Abstract:A DC high brigytness laser driven by photoemissive electron gun is being developed at Peking University,in order to produce 50~100ps electron bunches of high quality.The gun consists of a photocathode preparation chamber and a DC acceleration cavity.Different ways of fabricating photocathode,such as chemical vapor deposition,ion beam implantation and ion beam enhanced deposition,can be adopted.The acceleration gap is designed with the aid of simulation codes EGUN and POISSON,100kV DC high voltage is...
Keywords:
点击此处可从《原子核物理评论》浏览原始摘要信息
点击此处可从《原子核物理评论》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号