Nanoporous silicon fabricated at different illumination and electrochemical conditions

The properties of porous silicon prepared at different illumination and electrochemical conditions were studied. The preparation procedure was based on the electrochemical etching in HF containing electrolyte. In the dissolution of n-type silicon, an external source of light is necessary to obtain a sufficient holes flux density. Here, illumination was applied from the backside of the wafer (the side not immersed in the electrolyte), from topside (the side immersed in the electrolyte), and for the highly doped silicon, etching proceeds without illumination. The electrolyte contains HF in the range 2–50 wt%. The highest current density flows with topside assisted illumination. Backside illumination and etching in the dark resulted in a reduction in the current density. In the dark the current density significantly increased at a higher anodic bias. These conditions gave rise to pores formation with a diameter from 20 nm up to 3 μm. The smallest pore size was obtained for highly doped n-Si (111) wafers, etched without illumination. The present paper confirms the possibility of porous silicon formation in the dark and with backside illumination, these being alternative methods for topside assisted illumination etching methods.     

多孔硅光致发光峰半峰全宽的压缩

硅发光对于在单一硅片上实现光电集成是至关重要的.目前已有的使硅产生发光的方法有:掺杂深能级杂质、掺稀土离子、多孔硅、纳米硅以及Si/SiO₂超晶格.声空化所引发的特殊的物理、化学环境为制备光致发光多孔硅薄膜提供了一条重要的途径.实验表明,声化学处理对于改善多孔硅的微结构,提高发光效率和发光稳定性都是一项非常有效的技术.超声波加强阳极电化学腐蚀制备发光多孔硅薄膜,比目前通用的常规方法制备的样品显示出更优良的性质.这种超声波的化学效应源于声空化,即腐蚀液中气泡的形成、生长和急剧崩溃.在多孔硅的腐蚀过程中,由于超声波的作用增加了孔中氢气泡的逸出比率和塌缩,有利于孔沿垂直方向的腐蚀,使多孔硅光致发光峰的半峰全宽压缩到了3.8nm.     

New optical features to enhance solar cell performance based on porous silicon surfaces

Electrochemical etching is used to fabricate porous silicon (PS) surfaces for both sides of the Si wafer. The effect of PS on performance of Si solar cells is investigated and the reflected mirrors are manipulated to enhance solar cell efficiency. The process is promising for solar cell manufacturing due to its simplicity, lower cost and suitability for mass production. The PS surface has discrete pores and short-branched pores on the polished wafer side. In contrast, the etched backside of the wafer has smaller pore size, with random pores. PS formed on both sides has lower reflectivity value compared with results in other works. Solar cell efficiency is increased to 15.4% with PS formed on both sides compared with the unetched sample and other results. Using empirical models, the optical properties of the refractive index and the optical dielectric constant are investigated. The porous surface texturing properties could enhance and increase the conversion efficiency of porous Si solar cells. The obtained results are in agreement with experimental and other data.     

Effect of surface modification by thermally oxidization and HF etching on UV photoluminescence emission of porous silicon

Photoluminescence of porous silicon (PS) is instable due perhaps to the nanostructure modification in air. The controllable structure modification processes on the as-prepared PS were conducted by thermal oxidization and/or HF etching. The PL spectra taken from thermally oxidized PS showed a stable photoluminescence emission of 355 nm. The photoluminescence emission taken from both of PS and oxidized porous silicon (OPS) samples etched with HF were instable, which can be reversibly recovered by the HF etching procedure. The mechanism of UV photoluminescence is discussed and attributed to the transformation of luminescence centers from oxygen deficient defects to the oxygen excess defects in the thermal oxidized PS sample and surface absorbed silanol groups on PS samples during the chemical etched procedure.     

等离子喷涂层原生性孔隙几何结构的分形及统计特性

孔隙是等离子喷涂涂层原生性结构, 对涂层的耐磨损、耐腐蚀、耐高温等性能具有显著影响, 是涂层参数优化的重要指标之一. 因此, 对涂层孔隙结构特征参数的全面表征对于更加精确地评价涂层质量具有重要意义. 本文将概率统计方法、分形方法与数字图像分析技术相结合, 研究了等离子喷涂涂层原生性孔隙数量、形态、尺寸及其分布等结构特征参数表征方法及孔隙的成形机理. 首先通过改变喷涂功率得到不同孔隙状态的Fe基合金涂层, 随后采用数字图像分析技术对涂层截面孔隙的扫描电子显微形貌图进行处理, 最后通过Weibull统计模型分析了孔隙周长及面积的尺寸分布特征, 并利用基于分形思想的面积-周长幂率研究了孔隙不规则形态的定量表征方法. 在实验过程中, 为了分析涂层孔隙的成形机理, 采用Spraywatch在线监测喷涂粒子的飞行状态. 结果表明: 分形维数能够表征孔隙的不规则形态, 分形维数越大, 孔隙面积越大或边界形态越复杂, 并且其与孔隙的成形机理之间存在良好的映射关系; 孔隙面积及周长的尺寸分布均服从明显的两项Weibull分布特征, 孔隙尺寸较小时, 形状参数β 较大, 而孔隙尺寸较大时, 则反之; 喷涂功率对孔隙尺寸的聚集特点产生不同程度的影响, 随着喷涂功率的增加, 粒子的融化状态逐渐改善, 孔隙的尺寸明显降低; 而当孔隙面积(周长)小于特征值时, 相同尺寸的孔隙概率密度值则越来越接近, 说明孔隙功率的变化对小尺寸孔隙出现的概率影响较小.     

Improved performance of solar cell based on porous silicon surfaces

Porous silicon (PS) surfaces were fabricated by electrochemical etching for both sides of the Si wafer. The objective of the present study is to investigate the PS effect on performance of silicon solar cells. Moreover, enhancement of solar cell efficiency can be obtained by manipulating of the reflected mirrors, and the process is very promising for solar cells manufacturing due to its simplicity, lower cost and suitability for mass production. The surface of PS is observed to have been discrete pores with smooth walls, and with short branches pores for the polished wafer side. In contrast, the etched backside of the wafer was observed to have bigger pore size than the etched polished side, and pores on the surface are in random location. PS formed on the both sides has lower reflectivity value in comparison to the other researcher group. The increase in efficiency of solar cell fabricated with PS formed on both sides of the wafer were extremely observed in comparison to one side PS and bulk silicon solar cells respectively. Solar cell fabricated shows that the conversion efficiency increased to 14.5% in comparison to unetched sample. The porous surface texturing properties could enhance and increased the conversion efficiency of silicon solar cells, these results also showed that the efficiency with this procedure is more promising in comparison to other solar cells, which are fabricated under similar conditions.     

声空化物理化学综合法制备发光多孔硅薄膜的微结构与发光特性

声空化所引发的特殊的物理、化学环境为制备高效发光的多孔硅薄膜提供了一条重要的途径.实验结果表明，声化学处理对于改善多孔硅的微结构，提高发光效率和发光稳定性都是一项非常有效的技术.超声波加强阳极电化学腐蚀制备发光多孔硅薄膜，比目前通用的常规方法制备的样品显示出更优良的性质.这种超声的化学效应源于声空化，即腐蚀液中气泡的形成、生长和急剧崩溃，在多孔硅的腐蚀过程中，孔中的氢气泡，由于超声波的作用增加了逸出比率和塌缩，有利于孔沿垂直方向的腐蚀. 关键词： 声空化方法 微结构 发光特性 多孔硅     

A novel optical technique for the estimation of porosity in porous silicon thin films

Porous silicon (por-Si) can be produced when silicon single crystals are submerged in fluoride solutions and irradiated with laser light. The shape of the por-Si film is determined by the laser beam intensity profile. When laser light is reflected from a Gaussian-shaped film, a divergent beam, which exhibits ring patterns, is observed. The rings are formed by a combination of optical interference and Fresnel diffraction. The size of the pattern is determined by the shape and depth of the film interfaces as well as the index of refraction of the film. The index of the film is determined by the porosity and the index of the fluid that fills the pores. We explore the application of measurements of the reflected beam patterns to the determination of porosity for por-Si thin films. We report the first direct estimation of the porosity of photochemically produced porous silicon. Porosities of 70-95% are found for n-type Si(111) etched in 48% HF with 633-nm illumination. Having demonstrated the success of this technique, we discuss improvements and extensions that can be made.     

Effect of different electrolytes on porous GaN using photo-electrochemical etching

This article reports the properties and the behavior of GaN during the photoelectrochemical etching process using four different electrolytes. The measurements show that the porosity strongly depends on the electrolyte and highly affects the surface morphology of etched samples, which has been revealed by scanning electron microscopy (SEM) images. Peak intensity of the photoluminescence (PL) spectra of the porous GaN samples was observed to be enhanced and strongly depend on the electrolytes. Among the samples, there is a little difference in the peak position indicating that the change of porosity has little influence on the PL peak shift, while it highly affecting the peak intensity. Raman spectra of porous GaN under four different solution exhibit phonon mode E₂ (high), A₁ (LO), A₁ (TO) and E₂ (low). There was a red shift in E₂ (high) in all samples, indicating a relaxation of stress in the porous GaN surface with respect to the underlying single crystalline epitaxial GaN. Raman and PL intensities were high for samples etched in H₂SO₄:H₂O₂ and KOH followed by the samples etched in HF:HNO₃ and in HF:C₂H₅OH.     

Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching

In this work, we present the formation of porous layers on hydrogenated amorphous SiC (a-SiC: H) by Ag-assisted photochemical etching using HF/K₂S₂O₈ solution under UV illumination at 254 nm wavelength. The amorphous films a-SiC: H were elaborated by d.c. magnetron sputtering using a hot pressed polycrystalline 6H-SiC target. Because of the high resistivity of the SiC layer, around 1.6 MΩ cm and in order to facilitate the chemical etching, a thin metallic film of high purity silver (Ag) has been deposited under vacuum onto the thin a-SiC: H layer. The etched surface was characterized by scanning electron microscopy, secondary ion mass spectroscopy, infrared spectroscopy and photoluminescence. The results show that the morphology of etched a-SiC: H surface evolves with etching time. For an etching time of 20 min the surface presents a hemispherical crater, indicating that the porous SiC layer is perforated. Photoluminescence characterization of etched a-SiC: H samples for 20 min shows a high and an intense blue PL, whereas it has been shown that the PL decreases for higher etching time. Finally, a dissolution mechanism of the silicon carbide in 1HF/1K₂S₂O₈ solution has been proposed.     

MoO3/Al2O3催化剂中Mo分散的正电子研究

用浸渍法制备了一系列不同Mo含量的MoO₃/Al₂O₃催化剂.测量了这些样品的正电子湮没寿命谱(PALS)与符合多普勒展宽(CDB)谱,以研究其孔洞结构以及Mo分散.正电子寿命测量结果表明,Al₂O₃载体中存在两种不同尺寸的孔洞.掺入MoO₃之后,Mo原子主要进入Al₂O₃的大孔中,使孔洞体积减小.符合多普勒展宽谱结果表明,当MoO 关键词： 3/Al₂O₃催化剂')" href="#">MoO₃/Al₂O₃催化剂 正电子湮没寿命谱 符合多普勒展宽 Mo 分散     

少子寿命和表面形貌与多孔硅发光性能的关系

研究了不同时间腐蚀的多孔硅的光致发光性能与多孔硅的表面形貌和少子寿命之间的关系。结果表明,多孔硅的发光来自与氧空位有关的缺陷,而多孔硅表面的氢原子能够钝化多孔硅表面的非辐射中心从而提高多孔硅的发光效率。多孔硅的空隙度随腐蚀时间的延长而增大,这也导致了多孔硅的少子寿命的降低,从而造成多孔硅的光致发光效率随多孔硅空隙度的增大以及少子寿命的降低而提高。另外,原子力显微照片表明长时间的腐蚀使多孔硅表面层被化学腐蚀,从而降低了多孔硅表面的粗糙度。     

离子径迹模板法制备纳米线

重离子辐照的高分子有机膜,经过适当的处理,可以作为模板制备金属和可溶性盐纳米线,此方法称为离子径迹模板法。介绍了用电化学沉积方法和过饱和溶液法制备金属纳米线和可溶性盐纳米线的基本原理和制各实例,同时还展望了离子径迹模板法制备纳米线的一些可能的应用。The polymer foils irradiated by heavy ions can be used as temptates to prepai nanowires and some inorganic salt nanowires. It is called ＂ion-track template method＂. Compared to other templates, such as AAO template and porous silicon, etched ion-track template is more convenient and flexible. The density of the pores can be easily controlled by changing the ion fluences and the diameter of the pores can be altered through changing the etching condition. The pores of the etched ion-track template are well aligned. We present some examples of preparing metallic nanowires and inorganic salt wires by electrochemical deposition and by supersaturation solution method, respectively. We also introduce some applications of nanowires prepared with ion-track template method.     

Structure of triglycine sulfate embedded in porous aluminum oxide

The X-ray diffraction investigations have been performed for nanocomposite materials based on porous aluminum oxide with inclusions of TGS and TGS, which is doped with L,α-alanine (ATGS). The presence of the TGS and ATGS textures in pores of Al₂O₃ films has been found. It has been established that, under conditions of confined geometry, the broadening of diffraction maxima of the reflection is caused by the size effect. The temperature dependences of the order parameter for porous aluminum oxide with TGS inclusions have been constructed.     

Flat layered structure and improved photoluminescence emission from porous silicon microcavities formed by pulsed anodic etching

Single-mode, highly directional and stable photoluminescence (PL) emission has been achieved from porous silicon microcavities (PSMs) fabricated by pulsed electrochemical etching. The full width at half maximum (FWHM) of the narrow PL peak available from a freshly etched PSM is about 9 nm. The emission concentrates in a cone of 10° around the normal of the sample, with a further reduced FWHM of ∼5.6 nm under angle-resolved measurements. Only the resonant peak is present in such angle-resolved PL spectra. No peak broadening is found upon exposure of the freshly prepared PSM to a He-Cd laser beam, and the peak becomes somewhat narrower (∼5.4 nm) after the PSM has been stored in an ambient environment for two weeks. At optimized etching parameters, even a 4-nm FWHM is achievable for the freshly etched PSM. In addition, scanning electron microscopy (SEM) plane-view images reveal that the single layer porous Si formed by pulsed current etching is more uniform and flatter than that formed by direct current (dc) etching, demonstrated by the well-distributed circular pores with small size in the former in comparison with the irregular interlinking pores in the latter. The SEM cross-section images show the existence of oriented Si columns of 10 nm diameter along the etching direction within the active layer, good reproducibility and flat interfaces. It is thus concluded that pulsed current etching is superior to dc etching in obtaining flat interfaces within the distributed Bragg reflectors because of its minor lateral etching. Received: 7 March 2001 / Accepted: 23 July 2001 / Published online: 30 October 2001     

Photoluminescence origin of lightly doped silicon nanowires treated with acid vapor etching

In this work, we carry out a comprehensive photoluminescence (PL) study to elucidate the origin of light emission from porous silicon nanowires (pSiNWs). SiNWs were first grooved in lightly doped Si wafer by silver assisted chemical etching, and then treated with an acid vapor emanating from HF/HNO₃ aqueous solution heated at 60 °C. Scanning and transmission electron microscopies were used to investigate the effect of the acid vapor etching on morphological properties of SiNWs. The as prepared pSiNWs exhibited a strong room temperature PL emission centered at 1.93 eV. An increase of the PL intensity was observed with the increase of HNO₃ in the acid solution. By varying the laser excitation density from 60 to 300 W/cm², we shed the light on the radiative recombination modes occurring within the Si nanocrystals (SiNCs) generated along the pSiNWs. We study as well the temperature-dependent PL of the pSiNWs in the range 10 to 300 K. Based on both laser excitation density and temperature-dependent PL, we propose a multilevel transition scheme resuming the PL origin taking into account the size distribution, shape and surface states of the SiNCs trimming the wire sidewalls.     

溶胶-凝胶法制备PbS量子点玻璃的研究

采用溶胶-凝胶法合成了半导体PbS量子点掺杂的Na₂O-B₂O₃-SiO₂玻璃,研究了不同热处理工艺对玻璃结构的影响,利用多种表征手段研究了量子点掺杂玻璃中的微晶结构及其光学性能.孔径分析结果表明随着热处理温度的升高玻璃内部孔径不断减小,最终孔结构几乎完全消失;红外光谱分析表明玻璃网络结构在较低温度下己经形成,随温度的升高不断密实化; X射线光电子能谱证明了玻璃中存在PbS,高分辨透射电镜表征了玻璃基质中掺杂的微晶结构是PbS,统计计算表明,玻璃中微晶的平均粒径尺寸为3.5nm;吸收光谱分析发现,微晶掺杂玻璃的吸收边界较PbS的块体材料发生了明显的蓝移,产生了量子尺寸效应;通过Z扫描技术测得其非线性折射率γ为-2.03×10^-14cm²/GW. 关键词： PbS量子点 半导体 非线性光学效应 溶胶-凝胶法     

Effective medium approach for calculations of optical anisotropy in porous materials

We report on a generalized approach for the calculation of optical properties of various porous semiconductors. The presented methodology provides a simple method for predicting the type and value of optical anisotropy in different materials. Specifically, the cases of electrochemically etched mesoporous Si on (110)-oriented substrate and electrochemically-etched porous InP and GaAs materials on (100) substrates are considered. The optical anisotropy of mesoporous Si is explained and the dependence of the optical birefringence of this material on various material parameters is obtained. The optical anisotropy of porous InP and GaAs with crystallographic pores is predicted based on the presented model. PACS 78.20.-e; 78.20.Bh; 78.20.Ci; 78.20.Fm; 78.30.Fs;78.55.Mb     

Chemical Composition of Porous Silicon Formed in Aqueous and Aqueous-Alcoholic Electrolytes, According to the IR Spectroscopy Data

The chemical composition of the surface of porous silicon synthesized on weakly doped silicon of the n type of conductivity (KÉF-20) with the crystallographic orientation (100) (100) in aqueous and aqueous-alcoholic electrolytes with different HF concentrations has been analyzed by IR spectroscopy.     

聚苯乙烯多孔薄膜的密度梯度控制

利用单分散的SiO2微球自组装制备了含一种尺寸微球的SiO2胶体晶体和含多种尺寸微球的多层异质结构。对含一种尺寸微球的SiO2胶体晶体进行煅烧和刻蚀处理后,胶体晶体中空隙所占比例大于立方密堆结构的26%,形成了非密堆结构,而且刻蚀时间越长,空隙比例越大。在同样的热处理和刻蚀条件下,微球尺寸越小的胶体晶体被刻蚀的程度越高,结构中空气空隙所占的比例越大。对SiO2多层异质结构经过煅烧和刻蚀处理后,得到了空隙梯度变化的多层结构,以此为模板制备了密度梯度变化的聚苯乙烯多孔薄膜。薄膜各层之间形成了平滑的过渡,没有显示出明显的层间缺陷,且孔与孔之间没有出现3维有序多孔结构中常见的大的连通孔道。