偏振对飞秒激光辐照LiF晶体的影响

飞秒激光聚焦到LiF晶体内部, 晶体的加工形貌随偏振改变. 实验表明, 偏振方向平行于<110> 晶向时, 加工起点到表面的距离是<100>偏振下的1.08 倍; 而<110>偏振下加工终点到表面的距离是<100> 偏振下的1.01 倍. 为了解释加工形貌的偏振依赖, 建立了逆韧致辐射、雪崩电离和无辐射跃迁的模型, 首先, 价带电子通过强场电离和雪崩电离, 从激光中吸收能量跃迁到导带, 该过程用电子密度演化方程和傍轴非线性薛定谔方程描述, 求解方程得到导带电子密度; 其次, 导带电子通过无辐射跃迁过程释放能量给晶格, 由能量守恒计算出晶格温度沿激光传播方向的分布; 最后, 晶格温度超过熔点以上的区域被加工. 模拟结果显示, <110>偏振下加工起点到表面的距离是<100> 偏振下的1.03倍, 而<110>偏振下加工终点到表面的距离是<100>偏振下的0.981 倍, 与实验结果基本一致. 虽然Z扫描技术测量的非线性折射率随偏振方向变化, 但是非线性折射率的变化趋势与实验结果相反. 模拟和实验证明逆韧致辐射导致加工形貌随偏振变化.     

Compton Spectrum Due to L-Shell Electrons

Compton spectrum due to L-shell electrons of thorium has been measured by the coincidence technique, using 279 keV incident gamma photons. The influence of L-shell electron momenta on the distribution of the scattered photons has been studied with reference to the Compton profile due to free electrons and compared with the exact and impulse hydrogenic theoretical models. Significant deviations are found between experimental and theoretical Compton spectra.     

GaN基p-i-n型雪崩探测器的制备与表征

制备和表征了p-i-n型的GaN基雪崩探测器.器件在-5V下的暗电流约为0.05 nA,-20 V下的暗电流小于0.5 nA.响应增益-偏压曲线显示,可重复的雪崩增益起始于80 V附近,在85 V左右增益达到最大为120,表明所制备的器件具有较好的质量.C-V测量用来确定载流子的分布和耗尽信息,结果显示,P型层在15 ...     

A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching

The ruggedness of a superjunction metal–oxide semiconductor field-effect transistor (MOSFET) under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island with relatively high doping concentration into the P-column, the avalanche breakdown point is localized. In addition, a trench type P+ contact is designed to shorten the current path. As a consequence, the avalanche current path is located away from the N+ source/P-body junction and the activation of the parasitic transistor can be effectively avoided. To verify the proposed structural mechanism, a two-dimensional (2D) numerical simulation is performed to describe its static and on-state avalanche behaviours, and a method of mixed-mode device and circuit simulation is used to predict its performances under realistic unclamped inductive switching. Simulation shows that the proposed structure can endure a remarkably higher avalanche energy compared with a conventional superjunction MOSFET.     

Self-organized Criticality in Hierarchical Brain Network

It is shown that the cortical brain network of the macaque displays a hierarchically clustered organization and the neuron network shows small-world properties. Now the two factors will be considered in our model and the dynamical behavior of the model will be studied. We study the characters of the model and find that the distribution of avalanche size of the model follows power-law behavior.     

颗粒堆准静态崩塌及慢速流动过程中的堆结构研究

运用自行设计的实验装置并结合颗粒跟踪与成像技术,系统地研究了不同堆积程度的颗粒堆在准静态崩塌过程中的滑移行为.实验发现在颗粒堆中一部分颗粒沿着斜下方向滑动,而另一部分颗粒则几乎没有滑动.精确的数据分析还表明颗粒堆的滑动部分具有明显的层状结构特征,在每一滑动层中颗粒的滑移量基本相同,且各滑动层之间近似相互平行.这些滑动层与水平面的夹角约在40—50之间,与静态层表面与水平面的夹角一致.各滑动层中颗粒的滑移量随其距静态层表面的距离而线性的增加.不同堆积程度的颗粒堆的静态部分基本上不随堆积体积而改变.     

InGaAs单光子探测器传感检测与淬灭方式

针对InGaAs单光子雪崩光电二极管(SPAD)的光电感应特性,研究了基于门控主动式淬灭的SPAD动态偏置控制和电路实现的策略.采用门控主动淬灭控制可降低淬灭时间,有效抑制暗计数和后脉冲效应.接口感应检测电路采用标准互补金属氧化物半导体(CMOS)工艺进行制造,而SPAD则采用非标准CMOS工艺.利用铟柱互连混合封装工艺实现SPAD与感应接口电路的协同工作.在低温-30?C的条件下,实现了SPAD光触发雪崩电流信号的提取和快速淬灭.研究了感应电阻和临界检测电压对传感检测电性能的影响,并采用简单电路结构实现状态检测,实测得到的SPAD恢复时间、传输延时分别为575,563 ps,淬灭时间为1.88 ns,满足纳秒级精度传感检测应用的需要.     

Detection

This review on second- and third-generation multidetectors devoted to heavy-ion collisions aims to cover the last twenty years. The presented list of devices is not exhaustive but regroups most of the techniques used during this period for nuclear reactions at intermediate energy (≃ 10A MeV to 1A GeV), both for charged-particle and neutron detection. The main part will be devoted to 4π multidetectors, projectile decay fragmentation, high-resolution magnetic spectrometers, auxiliary detectors and neutron detection. The last part will present the progress in electronics and detection in view of the construction of future-generation detectors.     

气体雪崩过程中光电信号的时间关联

本文报道在有限正比和SQS模式下的光信号和原初雪崩的电信号时间关联的实验结果.表明伴随有限正比雪崩过程有微弱的光发射,光脉冲的半高全宽(FWHM)为4ns;自猝灭流光光脉冲相对于原初雪崩的电信号有几ns的延迟,而且这种延迟的涨落(FWHM)也有几ns.实验还给出了它们随丝电压和猝灭气体浓度的变化情况.     

减小雪崩光电二极管温度影响的研究

本文就如何减小温度对雪崩光电二级管响应度的影响进行了研究。文中从理论上分析了温度以及偏置电压对雪崩光电二极管响应度的影响，并在此基础上提出了两种减小温度影响的可行方法：恒温恒压法和偏置电压温度补偿法，并进行了实验验证