Si基Bi4Ti3O12铁电薄膜的制备与特性研究

采用sol-gel工艺,在分层快速退火的工艺条件下成功地制备了高质量Si基BiTi3O12铁电薄膜.研究了Si基Bi4Ti3O12薄膜的生长行为、铁电性能、C-V特性和疲劳特性.研究表明:Si基Bi4Ti3O12薄膜具有随退火温度升高沿c轴择优生长的趋势;退火温度通过影响薄膜的晶粒尺寸、生长取向和薄膜中载流子的浓度来改变Si基Bi4Ti3O12薄膜的铁电性能;Ag/Bi4Ti3O12/p-Si异质结的C-V特性曲线呈现顺时针回滞,可以实现极化存储;109次极化反转后Bi4Ti3O12薄膜的剩余极化仅下降12%,具有较好的疲劳特性.     

γ射线辐照与O2退火对Bi∶CdWO4单晶体光谱性能的影响

用500和800℃,在氧气下,对掺Bi钨酸镉晶体进行热退火处理,测定了处理后晶体的吸收光谱与发射光谱。随退火处理温度的升高晶体的吸收强度降低,吸收边带发生蓝移。在373与980nm的光激发下,分别观察到发光中心为528nm的CdWO4晶体本征发光与发光中心为1 078nm的Bi 5+发光。晶体样品通过高温氧气处理,发光中心为528nm的荧光带强度增强,但发光中心为1 078nm的荧光带强度变弱。这可能是由于氧退火使Bi 5+转化成Bi 3+所致。经退火处理后,晶体的颜色逐渐变浅,透光率明显提高,这是由于晶体中氧空位减少所致。经γ射线辐照处理后,528nm处的发光增强,而1 078nm处的发光减弱,这可能是由于γ射线辐照后导致Bi 5+变成Bi 3+。     

La掺杂对Bi4Ti3O12薄膜铁电性能的影响

利用Sol-Gel法在Pt/Ti/SiO2/Si衬底上制备出Bi4Ti3O12和Bi3.25La0.75Ti3O12薄膜,研究了La掺杂对Bi4Ti3O12薄膜的晶体结构、铁电性能和疲劳特性的影响,发现La掺杂没有改变Bi4Ti3O12薄膜的基本晶体结构,并且提高了Bi4Ti3O12铁电薄膜的剩余极化值和抗疲劳性能,对La掺杂改善Bi4Ti3O12铁电薄膜性能的机理进行了讨论.     

Bi离子掺杂GeO2-Al2O3-M(M=Na2O,BaO,Y2O3)玻璃的光学性质

用高温熔融法制备了Bi离子掺杂浓度为1mol%的GeO-B2O3-Na2O (GBNB),GeO2-Al2O3-Na2O(GANB),GeO2-Al2O3-BaO(GABB)和GeO2-Al2O3-Y2O3(GAYB)玻璃.测定了样品玻璃的差热曲线、吸收、发射光谱及荧光衰减曲线.实验发现GBNB,GANB,GAYB,GABB的吸收边带逐步发生红移.由于这些吸收边带是由Bi3+的6s2电子到Bi5+ 6s0空轨道的跃迁引起.因此推断GBNB,GANB,GAYB,GABB玻璃中Bi5+离子的含量逐步增加.在GABB,GAYB,GANB三个样品中观察到发光中心约1220nm超宽带荧光发射.荧光强度从GABB,GAYB,GANB逐步减弱,荧光半高宽和荧光寿命逐步变小.这些超宽带的荧光归属为Bi5+离子的发光所致.从吸收与荧光光谱的变化,推断在GeO2-Al2O3玻璃中引入BaO,Y2O3组分有利于Bi5+离子的形成.讨论了BaO,Y2O3化学组分对Bi离子在玻璃中的价态影响的内在机理.     

GeO2-Bi2O3-MOx(MOx=WO3,BaO)玻璃近红外超宽带发光的研究

(99.5-χ)GeO2-XBaO-0.5Bi2O3(χ=3,6,9mol%)与(99.5-(4))GeO2-(4)WO3-0.5Bi2O3((4)=3,6,9mol%)玻璃,测定了样品的发射光谱(800 nmLD激发)、吸收光谱、荧光衰减和差热曲线.实验结果表明,在GeO2-.WO3-Bi2O3系统玻璃中,随着WO3含量的增加,在1260 nm处的发光强度增强,荧光半高宽(FWHM)增宽,荧光寿命增长,而且玻璃的吸收边带发生明显的红移;在GeO2-BaO-Bi2O3系统玻璃中,随着BaO含量的增加,玻璃在1290 nm处发光强度增强,FWHM增宽,荧光寿命增长,吸收边带也有明显的红移.从吸收边带发生红移的情况,结合发射光谱和荧光衰减曲线特性,我们推断玻璃样品在近红外的宽带发光可能由Bi5+离子所引起.从荧光特性估算了玻璃的σ×τ和σp×△λ值,这些玻璃均具有较小的σp×τ和较大的σ×△λ特性,说明GeO2-Bi2O3-MOx(MOx=WO3,BaO)系统玻璃是研制成近红外(O到S波段)超宽带光纤放大器的良好材料.     

Si基Bi3.25La0.75Ti3O12铁电薄膜的制备与特性研究

采用Sol-Gel工艺低温制备了Si基Bi3.25La0.75Ti3O12铁电薄膜.研究了退火温度对薄膜微观结构、介电特性与铁电性能的影响.500℃退火处理的Bi3.25La0.75Ti3O12薄膜未能充分晶化,晶粒细小且有非晶团聚,介电与铁电性能均较差.高于550℃退火处理的Bi3.25La0.75Ti3O12薄膜表面平整无裂纹,晶粒均匀,无焦碌石相或其他杂相,薄膜为多晶生长,具有较好的介电与铁电性能,4V电压下的漏电流密度低于2×10-8A/cm2.随退火温度升高,晶化程度的提升和晶粒尺寸的增大使薄膜的剩余极化增大而矫顽电场降低.600℃退火处理的Bi3.25La0.75Ti3O12薄膜显示了优于Bi4Ti3O12薄膜的铁电性能,其剩余极化Pr和矫顽电场Ec分别达到17.5μC/cm2和102kV/cm.     

基于Ge2Sb1.5Bi0.5Te5可饱和吸收体的锁模光纤激光器

Ge2Sb1.5Bi0.5Te5薄膜具有宽光谱吸收和高稳定性的特点.在金镜上采用磁控溅射制备了40 nm厚的Ge2Sb1.5Bi0.5Te5薄膜,将其在150℃下退火20 min,退火后Ge2Sb1.5Bi0.5Te5由非晶态转变为晶态.测试发现晶态Ge2Sb1.5Bi0.5Te5可饱和吸收体的调制深度提高到了原来的1...     

Bi4Ge3O12晶体及其掺杂晶体的拉曼光谱研究

利用拉曼光谱分别对Bi4 Ge3O12(BGO)晶体以及BGO:Pb(0.02 wt%),BGO:Al(0.02 wt%)进行了分析研究.测得的拉曼光谱显示,掺杂晶体对比纯的BGO晶体,在某些特征峰处,相对强度发生改变.此外,对于掺杂的晶体,部分拉曼特征峰会有偏移.因此,可以通过测定拉曼光谱来判定样品是否含有杂质.     

掺杂的Bi4Ge3O12晶体的近红外发光性能

生长了Mg、Ca离子掺杂(提拉法)和Cl离子掺杂(坩埚下降法)的Bi₄Ge₃O₁₂(BGO)晶体,测试了晶体样品的吸收谱、光致发光谱和发光衰减时间等。这些掺杂的BGO晶体的可见光发光比纯BGO有所减弱,但在808 nm和980 nm激光二极管(LD)激发下出现了纯BGO几乎没有的近红外发光,归因于改变了能级的Bi离子或可能出现的低价态Bi离子。掺杂对近红外发光的影响跟掺杂离子价态有关,同价态的掺杂离子对近红外发光的影响相差不大。     

若干钠锗酸盐晶体和熔体的温致结构变化及其锗配位数的拉曼光谱研究

本文测定了Na4GeO4、Na2GeO3、Na2Ge4O9和Na4Ge9O20等晶体从273K到1413K升温及熔体的拉曼光谱,结合分析金红石型GeO2的相关结构和光谱,研究了其微结构单元在升温过程中的变化、熔体中的形态和锗的氧配位数及其温致变化。Na4GeO4和Na2GeO3晶体结构单元为GeO4四面体,在升温过程及其熔体中锗维持四配位。Na2Ge4O9和Na4Ge9O20晶体结构单元为GeO4四面体和GeO6八面体共存,升温过程中,GeO6八面体将发生结构转变,在熔融状态全部转变为GeO4四面体,并产生与钠离子等摩尔分数的非桥氧,在熔体中锗的氧配位数为4。研究还表明,桥氧的对称弯曲振动模可以反映不同微结构单元间的连接,并且随着温致结构的变化而产生特征性的变化。     

Optical waveguide in Nd:Bi_(12)SiO_(20) crystal produced by multi-energy C ion implantation

We report the fabrication of a planar waveguide in the Nd:Bi_(12)SiO_(20) crystal by multi-energy C ions at room temperature. The waveguide is annealed at 200℃, 260℃, and 300℃ in succession each for 30 min in an open oven. The effective refractive index profiles at transverse electric(TE) polarization are stable after the annealing treatments. Damage distribution for multi-energy C ion implanted in Nd:Bi_(12)SiO_(20) crystal is calculated by SRIM 2010. The Raman and fluorescence spectra of the Nd:Bi_(12)SiO_(20) crystal are collected by an excitation beam at 633 nm and 473 nm, respectively. The results indicate the stabilization of the optical waveguide in Nd:Bi_(12)SiO_(20) crystal.     

Scalable fabrication of Bi_2O_2Se polycrystalline thin film for near-infrared optoelectronic devices applications

We present a controlled, stepwise formation of layered semiconductor Bi_2O_2 Se thin films prepared via the vapour process by annealing topological insulator Bi_2Se_3 thin films in low oxygen atmosphere for different reactions. Photodetectors based on Bi_2O_2 Se thin film show a responsivity of 1.7×10~4 A/W at a wavelength of 980 nm. Field-effect transistors based on Bi_2O_2 Se thin film exhibit n-type behavior and present a high electron mobility of 17 cm~2/V·s. In addition, the electrical properties of the devices after 4 months keeping in the air shows little change, implying outstanding air-stability of our Bi_2O_2 Se thin films. From the obtained results, it is evident that low oxygen annealing is a surprisingly effective method to fabricate Bi_2O_2 Se thin films for integrated optoelectronic applications.     

Shaped crystal growth and scintillating properties of Yb:(Gd,Lu)3Ga5O12 solid solutions

Shaped single crystals of (Lu_xGd_1−x)₃Ga₅O₁₂ (0.0x1.0) and (Yb_0.05Lu_xGd_0.95−x)₃Ga₅O₁₂ (0.0x0.9) were grown by the modified micro-pulling-down method. Continuous solid solutions with garnet structure and a linear compositional dependency of crystal lattice parameter in the system Yb:(Gd,Lu)₃Ga₅O₁₂ are formed. Measured optical absorption spectra of the samples show 4f–4f transitions related to Gd³⁺ ion at 275 and 310 nm, and also an onset of charge transfer transitions from oxygen ligands to Gd³⁺ or Yb³⁺ cations below 240 nm. A complete absence of Yb³⁺ charge transfer luminescence under X-ray excitation in any of the investigated samples was explained by the overlapping of charge transfer absorption of Yb³⁺ by that of Gd³⁺ ions. For specific composition of Lu_1.5Gd_1.5Ga₅O₁₂ an intense defect-host lattice-related emission, which achieve of about 40% integrated intensity compared with Bi₄Ge₃O₁₂, was found.     

Bismuth oxide thin films prepared by chemical bath deposition (CBD) method: annealing effect

Bismuth oxide thin films have been deposited by room temperature chemical bath deposition (CBD) method and annealed at 623 K in air. They were characterized for structural, surface morphological, optical and electrical properties. From the X-ray diffraction patterns, it was found that after annealing a non-stoichiometric phase, Bi₂O_2.33, was removed and phase pure monoclinic Bi₂O₃ was obtained. Surface morphology of Bi₂O₃ film at lower magnification SEM showed rod-like structure, however, higher magnification showed a rectangular slice-like structure perpendicular to substrate, giving rise to microrods on the surface. The optical studies showed the decrease in band gap by 0.3 eV after annealing. The electrical resistivity variation showed semiconductor behavior and from thermoemf measurements, the electrical conductivity was found to be of n-type.     

低温燃烧合成法制备的氧化铝陶瓷粉体的发光特性

α-Al₂O₃∶C单晶具有优良的热释光特性,被用做热释光剂量计,但α-Al₂O₃∶C晶体剂量计的形状不易加工,生产成本高且碳在晶体中难以掺杂均匀。采用低温燃烧合成法以无水乙醇为溶剂,尿素为染料,硝酸铝为反应物制备少团簇、分散均匀的片状α-Al₂O₃∶C陶瓷粉体。探讨不同点火温度和不同退火温度对其光致发光特性的影响,不同退火温度对热释光特性的影响以及热释光与辐射剂量(90Sr β)的关系。通过分析α-Al₂O₃∶C陶瓷粉体的光致发光光谱得出：α-Al₂O₃∶C陶瓷粉体的发射波长在395 nm附近,点火温度T≤800℃时,点火温度为500 ℃制备的α-Al₂O₃∶C陶瓷粉体的光致发光强度最强;在相同点火温度T=500 ℃下,经不同温度退火制备α-Al₂O₃∶C陶瓷粉体,点火温度为500 ℃制备的α-Al₂O₃∶C陶瓷粉体经1 000 ℃退火后光致发光强度最强。通过分析α-Al₂O₃∶C陶瓷粉体的热释光曲线得出：退火后的α-Al₂O₃∶C陶瓷粉体在200 ℃左右的热释光峰值占主导,900 ℃退火的α-Al₂O₃∶C陶瓷粉体在200 ℃附近的热释光峰值最强;通过峰高法对900 ℃高温退火处理后的α-Al₂O₃∶C陶瓷粉体位于200 ℃左右的热释光峰做剂量响应曲线,可以看出,在1～50 Gy剂量范围内具有良好的热释光剂量线性响应关系,在50～200 Gy剂量范围内出现超线性响应关系。与α-Al₂O₃∶C晶体(1～10 Gy)和多孔Al₂O₃∶C薄膜(1～10 Gy)相比,α-Al₂O₃∶C陶瓷粉体的线性剂量响应范围明显扩大。此研究可为提高氧化铝陶瓷粉体的热释光性能提供思路。     

蓝光激发的Y2.93Al5O12∶0.07Ce3+黄色荧光粉的制备及光致发光

以Al₂(SO₄)₃·18H₂O、尿素为原料,采用水热-热解法制备了球形α-Al₂O₃粉体。以自制α-Al₂O₃、Y₂O₃及CeO₂为原料,固相法制备了白光LED用Y_2.93Al₅O₁₂∶0.07Ce3+黄色荧光粉,通过X射线衍射（XRD）、扫描电镜（SEM）、X射线能谱（EDS）及荧光光谱（PL）等对产物的物相、形貌及光致发光性能进行了表征。结果表明：水热-热解法制备出了物相纯净、分散性良好的球形α-Al₂O₃粉体,以该α-Al₂O₃为原料,合成出可被460 nm蓝光有效激发,发射光谱为峰值在550 nm宽带的Y_2.93Al₅O₁₂∶0.07Ce3+荧光粉,色坐标为（0.453,0.531 9）,采用GSAS软件对Y_2.93Al₅O₁₂∶0.07Ce3+荧光粉的XRD图进行了Rietveld结构精修,精修图与XRD测试图完全吻合,Y,Al,Ce,O四元素均匀地分布在黄色荧光粉产物中,Y_2.93Al₅O₁₂∶0.07Ce3+黄色荧光粉的激发光谱由两个部分组成,在340和460 nm处有两个非常明显的吸收峰,Ce3+的4f能级由于自旋-耦合而劈裂为两个光谱支项2F_7/2和2F_5/2,其中2F_5/2为基谱项。340 nm的激发峰对应于2F_5/2→5D_5/2的跃迁,460 nm的激发峰属于2F_7/2→5D_3/2的跃迁,并且460 nm处的激发强度强于340 nm处激发强度。以460 nm为监测波长得到的发射光谱,最强发射峰位于550 nm,Y_2.93Al₅O₁₂∶0.07Ce3+荧光粉是一种适用于白光LED的高性能黄色荧光粉。     

掺Bi离子锗铌酸盐红外发光玻璃的研究

用高温熔融法制备了Bi₂O₃掺杂的(0.9-x) GeO₂-xNb₂O₅-0.1BaO (含量x为摩尔分数, x=0, 0.04, 0.07, 0.1)系列玻璃. 测定了玻璃样品的差热分析(DTA)曲线、吸收光谱、发射光谱及X射线光电子能谱(XPS). 从DTA曲线分析得到玻璃的结晶起始温度与软化温度之差(T_x-T_g)达200℃以上. 吸收光谱中可观察到位于500, 700, 808和1000 nm处的吸收峰, 并随着Nb₂O₅含量x的增加吸收边带发生红移. 在波长为808 nm激光激发下, 观察到发光中心位于1300 nm处、荧光光谱半高宽约为200 nm的宽带发光. 荧光强度随Bi₂O₃掺杂量δ的增加先增强后减弱, 当掺杂量δ达到约0.01时, 荧光强度达到最强. 随着Nb₂O₅含量x从0.04增加到0.1时, 荧光强度逐步减弱. 样品的XPS峰分别位于159.6和164.7 eV, 它们介于Bi³⁺与Bi⁵⁺的特征结合能之间, 因此Bi³⁺与Bi⁵⁺可能同时存在于玻璃基质中. 从XPS及Bi离子的发光特性推断, 宽带的荧光发射可能起因于Bi⁵⁺. 随着Nb₂O₅含量x的增加, 荧光强度逐步减弱. 分析认为, Nb₂O₅取代GeO₂后形成了NbGe缺陷, 需要低价Bi离子进行电子补偿, 因而抑制了Bi⁵⁺形成, 致使荧光强度减弱.     

Investigation of inhomogeneous barrier height of Au/Bi4Ti3O12/n-Si structure through Gaussian distribution of barrier height

Au/Bi₄Ti₃O₁₂/n-Si structure is fabricated in order to investigate its current-voltage (I-V) characteristics in a temperature range of 300 K-400 K. Obtained I-V data are evaluated by thermionic emission (TE) theory. Zero-bias barrier height (Φ_B0) and ideality factor (n) calculated from I-V characteristics, are found to be temperature-dependent such that Φ_B0 increases with temperature increasing, whereas n decreases. Obtained temperature dependence of Φ_B0 and linearity in Φ_B0 versus n plot, together with lower barrier height and Richardson constant values obtained from Richardson plot, indicate that the barrier height of the structure is inhomogeneous in nature. Therefore, I-V characteristics are explained on the basis of Gaussian distribution of barrier height.     

Ce掺杂Bi2O3 光催化剂的制备、表征及其可见光催化性能

采用水热-焙烧法制备了Ce掺杂的可见光响应的Bi₂O₃光催化剂（Ce-Bi₂O₃）。利用 XRD、FT-IR、XPS和 UV-Vis对不同Ce-Bi₂O₃样品进行了表征分析,并以光催化降解金橙Ⅱ溶液为探针反应,考察了Ce-Bi₂O₃的可见光催化性能。结果表明,Ce掺杂可以减小催化剂的禁带宽度,使光谱响应范围向可见光拓展。掺杂的Ce可取代Bi₂O₃晶格中部分Bi,形成Bi-O-Ce键,并生成了少量铈铋复合氧化物（Bi_7.38Ce_0.62O_12.31）,它们的存在有效地抑制了光生电子-空穴对的复合,有助于提高Bi₂O₃的可见光催化活性。但焙烧时间过长将导致Ce-Bi₂O₃催化剂的表面发生烧结现象,致使其催化活性降低。可见光照射下的金橙Ⅱ光催化降解实验表明,经2 h焙烧后得到的Ce/Bi的量比为0.5 的Ce-Bi₂O₃催化剂具有最佳的光催化活性。