| 退火处理对W:Bi4Ge3O12和Bi12GeO20晶体发光性能的影响 |
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| 引用本文： | 俞平胜,苏良碧,唐慧丽,郭鑫,赵衡煜,杨秋红,徐军.退火处理对W:Bi4Ge3O12和Bi12GeO20晶体发光性能的影响[J].发光学报,2011,32(8):825-829. |
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| 作者姓名： | 俞平胜 苏良碧 唐慧丽 郭鑫 赵衡煜 杨秋红 徐军 |
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| 作者单位： | 1. 上海大学 材料科学与工程学院, 上海 200072;
2. 中国科学院上海硅酸盐研究所 透明与光功能无机材料重点实验室, 上海 201800 |
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| 基金项目： | 国家自然科学基金(60778036,60938001)资助项目 |
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| 摘 要： | 通过提拉法制备了W:Bi4 Ge3 O12和Bi12GeO20晶体,测试了晶体的吸收光谱、光致发光谱和发光衰减时间等.W:Bi4 Ge3 O12的可见光发光强度比纯Bi4 Ge3 O12有所增强,而且N2中退火处理对W:Bi4Ge3O12发光有进一步增强作用.Bi12GeO20在N2中退火处理后在745 nm附近有发光...
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| 关 键 词： | W: Bi4 Ge3 O12 Bi12 GeO20 光致发光 退火 |
| 收稿时间： | 2011-03-27 |
Effects of Annealing Treatment on the Photoluminescence Properties of W:Bi_4Ge_3O_(12) and Bi_(12)GeO_(20) Crystals |
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| YU Ping-sheng,SU Liang-bi,TANG Hui-li,GUO Xin,ZHAO Heng-yu,YANG Qiu-hong,XU Jun.Effects of Annealing Treatment on the Photoluminescence Properties of W:Bi_4Ge_3O_(12) and Bi_(12)GeO_(20) Crystals[J].Chinese Journal of Luminescence,2011,32(8):825-829. |
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| Authors: | YU Ping-sheng SU Liang-bi TANG Hui-li GUO Xin ZHAO Heng-yu YANG Qiu-hong XU Jun |
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| Institution: | 1. School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China;
2. Key Laboratory of Transparent and Opto Functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China |
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| Abstract: | W∶Bi4Ge3O12 and Bi12GeO20 crystals were prepared by Czochralski(Cz) method. The absorption, photoluminescence (PL) and PL lifetime spectra were investigated. The results revealed the PL intensity of W∶Bi4Ge3O12 was stronger than that of Bi12GeO20, and annealing in N2 can increase the PL intensity of W∶Bi4Ge3O12. Near infrared PL (at about 745 nm) was observed in Bi12GeO20 annealed in N2, and the lifetime was about 10 μs. The mechanisms of luminescence in W∶Bi4Ge3O12 and annealed Bi12GeO20 was discussed. |
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| Keywords: | W∶Bi4Ge3O12 Bi12GeO20 photoluminescence anneal |
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