A new direct band gap silicon allotropeο-Si32

Silicon is a preferred material in solar cells,and most of silicon allotropes have an indirect band gap.Therefore,it is important to find new direct band gap silicon.In the present work,a new direct band gap silicon allotrope of o-Si32 is discovered.The elastic constants,elastic anisotropy,phonon spectra,and electronic structure of o-Si32 are obtained using first-principles calculations.The results show that o-Si32 is mechanically and dynamically stable and is a direct semiconductor material with a band gap of 1.261 e V.     

以1，4-二硝基苯甲酸及邻菲啰啉为配位的镧系金属配位聚合物的合成、结构及性质研究

以1,4-二硝基苯甲酸（HL）和1,10-邻菲罗啉（phen）为配体,通过水热法与镧系金属盐合成了7个一维链状配位聚合物,其分子式为[Ce₂L₆（phen）₂]_n（1）和[LnL₃phen]_n（Ln=Sm,2;Eu,3;Gd,4;Tb,5;Dy,6;Er,7）。由X-射线单晶衍射测定了化合物晶体结构,通过磁性以及荧光测试表征了部分化合物的磁性和荧光性质。     

2,2'-联吡啶-3,3',6,6'-四羧酸过渡金属配合物的合成、结构及性质

以2,2'-联吡啶-3,3',6,6'-四羧酸(H₄bptc)为配体,通过水热合成的方法与过渡金属盐合成了3个配合物,其分子式分别为[Co₂(H₂bptc)₂(H₂O)₄]·bpe·9H₂O(1),[Ni₂(H₂bptc)₂(H₂O)₄]·bpe·9H₂O(2),[Ni₂(H₂bptc)₂(H₂O)₄]·0.5bpp·7H₂O(3)(bpe=1,2-二(4-吡啶基)乙烯,bpp=1,2-二(4-吡啶基)乙烷)。用红外光谱,X-射线单晶衍射对化合物的晶体结构进行了表征,并对这3个配合物的热稳定性进行了测试。化合物1~3为单核结构的配合物,它们均通过分子间氢键形成三维超分子结构。     

纳米二氧化钒薄膜的电学与光学相变特性

采用双离子束溅射氧化钒薄膜附加热处理的方式制备了纳米二氧化钒薄膜。在热驱动方式下,分别利用四探针测试技术和傅里叶变换红外光谱技术对纳米二氧化钒薄膜的电学与光学半导体-金属相变特性进行了测试与分析。实验结果表明,电学相变特性与光学相变特性之间存在明显的偏差,电学相变温度为63 ℃,高于光学相变温度,60 ℃;电学相变持续的温度宽度较光学相变持续温度宽度宽;在红外光波段,随着波长的增加,纳米二氧化钒薄膜的光学相变温度逐渐增大,由半导体相向金属相转变的初始温度逐渐升高,相变持续的温度宽度变窄。在红外光波段,纳米二氧化钒薄膜的光学相变特性可以通过光波波长进行调控,电学相变特性更适合表征纳米VO₂薄膜的半导体-金属相变特性。     

Ripening of single-layer InGaAs islands on GaAs（001）

The present paper discusses our investigation of InGaAs surface morphology annealed for different lengths of time.After annealing for 15 min,the ripening of InGaAs islands is completed.The real space scanning tunneling microscopy(STM) images show the evolution of InGaAs surface morphology.A half-terrace diffusion theoretical model based on thermodynamic theory is proposed to estimate the annealing time for obtaining flat morphology.The annealing time calculated by the proposed theory is in agreement with the experimental results.     

Analysis of resistive switching behaviors of vanadium oxide thin film

We demonstrated the polarization of resistive switching for Cu/VO_x/Cu memory cell. Switching behaviors of Cu/VO_x/Cu cell were tested by semiconductor device analyzer (Agilent B1500A), and the relative micro-analysis of I-V characteristics of VO_x/Cu was characterized by conductive atomic force microscope (CAFM). The I-V test results indicated that both forming and the reversible resistive switching between low resistance state (LRS) and high resistance state (HRS) can be observed under either positive or negative sweep. The CAFM images for LRS and HRS directly exhibited evidences of the formation and rupture of filaments based on positive or negative voltage. Cu/VO_x/Cu sandwiched structure exhibits a reversible resistive switching behavior and shows potential applications in the next generation nonvolatile memory field.     

向量优化问题有效解的稳定性

运用标量化的方法,通过锥正定真有效解的上半连续性讨论了无限维赋范空间中锥有效解的部分上半连续性,证明了锥有效解的通有稳定性.在此基础上,进一步证明,在Baire纲的意义下,绝大多数的向量优化问题至少存在一个锥正定真有效解是本质的有效解,换句话说,绝大多数的向量优化问题锥有效解是几乎下半连续的.     

Sensing Characteristics of Shear-Mode A1N Solidly Mounted Resonators with a Silicone Microfluidic System in Viscous Media

A1N solidly mounted resonators with silicone microfiuidic systems vibrating in shear mode are fabricated and characterized. The fabrication process is compatible with integrated circuits and the c-axis tilted A1N films are deposited, which allow in-liquid operation through excitation of the shear mode. The silicone microfluidic system is mounted on top of the sensor chip to transport the analyses and confine the flow to the active area. The properties of sensor operation in air, deionized water, ethanol, isopropanol, 80% glycol aqueous solution, glycol, and olive oil are characterized. The effects of different viscosities on the resonance frequency shift and Q-factor of the sensor have been discussed. The sensitivity and Q value in glycol of the sensor are 1.52 MHz cm2/μg and around 60, respectively. The results indicate the potential of a highly sensitive microfiuidic sensor system for the applications in viscous media.     

A study of transition from n-to p-type based on hexagonal WO3 nanorods sensor

Hexagonal WO3 nanorods are fabricated by a facile hydrothermal process at 180 ℃ using sodium tungstate and sodium chloride as starting materials. The morphology, structure, and composition of the prepared nanorods are studied by scanning electron microscopy, X-ray diffraction spectroscopy, and energy dispersive spectroscopy. It is found that the agglomeration of the nanorods is strongly dependent on the PH value of the reaction solution. Uniform and isolated WO3 nanorods with diameters ranging from 100 nm-150 nm and lengths up to several micrometers are obtained at PH = 2.5 and the nanorods are identified as being hexagonal in phase structure. The sensing characteristics of the WO3 nanorod sensor are obtained by measuring the dynamic response to NO2 with concentrations in the range 0.5 ppm-5 ppm and at working temperatures in the range 25 ℃-250 ℃. The obtained WO3 nanorods sensors are found to exhibit opposite sensing behaviors, depending on the working temperature. When being exposed to oxidizing NO2 gas, the WO3 nanorod sensor behaves as an n-type semiconductor as expected when the working temperature is higher than 50 ℃, whereas, it behaves as a p-type semiconductor below 50 ℃. The origin of the n- to p-type transition is correlated with the formation of an inversion layer at the surface of the WO3 nanorod at room temperature. This finding is useful for making new room temperature NO2 sensors based on hexagonal WO3 nanorods.     

Preparation and modification of VO_2 thin film on R-sapphire substrate by rapid thermal process

The VO2 thin film with high performance of metal-insulator transition （MIT） is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process （RTP）. The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method and THz time domain spectrum （THz-TDS）. X-ray diffraction （XRD）, X-ray photoelectron spectroscopy （XPS）, atomic force microscopy （AFM）, and search engine marketing （SEM） are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow- up RTP modification in nitrogen atmosphere. The crystallization and components of VO2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-~C hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.