| Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process |
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| 作者姓名： | 朱乃伟 胡明 夏晓旭 韦晓莹 梁继然 |
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| 基金项目： | Project supported by the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.61101055);the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20100032120029) |
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| 摘 要： | The VO2 thin film with high performance of metal-insulator transition （MIT） is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process （RTP）. The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method and THz time domain spectrum （THz-TDS）. X-ray diffraction （XRD）, X-ray photoelectron spectroscopy （XPS）, atomic force microscopy （AFM）, and search engine marketing （SEM） are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow- up RTP modification in nitrogen atmosphere. The crystallization and components of VO2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-~C hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.
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| 关 键 词： | VO2薄膜 蓝宝石衬底 太赫兹时域光谱技术 热加工 X-射线光电子能谱 THz-TDS 修饰 制备 |
Preparation and modification of VO_2 thin film on R-sapphire substrate by rapid thermal process |
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| Abstract: | rapid thermal process, V02 thin film, phase transition, modification |
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| Keywords: | rapid thermal process VO thin film phase transition modification |
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