电磁感应透明的高阶非线性效应对光孤子的影响

研究了电磁感应透明介质中高阶非线性效应对光孤子传输的影响。采用半经典理论获得介质对光场的线性和非线性响应,基于介质特性利用波动理论推演出三-五阶非线性薛定谔方程。介质的线性非线性特性分别决定了群速度色散参量,三阶和五阶非线性系数。研究结果表明,该非线性介质既可以诱导亮孤子也可以诱导暗孤子,取决于群速度色散参量和三阶非线性系数。当前者为负同时后者为正时产生亮孤子,当两者均为负时产生暗孤子,二者可以通过载频与相应跃迁能级失谐的调节获得。与普通非线性薛定谔方程相比,三-五阶非线性薛定谔方程对亮孤子和暗孤子出现的参数和输入条件更加严格。     

579 nm外腔式拉曼激光器传输耦合方程的数值计算

 为了提高以KGd(WO4)2晶体为拉曼介质的外腔式拉曼激光器的输出功率和转化效率,采用面积求和法编制matlab计算程序,对该激光器的传输耦合方程进行数值求解。计算得到了一至三阶斯托克斯光输出光强随时间的变化规律和受激拉曼散射的弛豫振荡过程。得出：拉曼谐振腔输出耦合镜对一阶斯托克斯光的反射率越高,拉曼谐振腔内的一阶斯托克斯光功率密度就越高,越有利于泵浦光向二阶斯托克斯光的转换。     

基于磁光调制偏振光的空间方位失调角高精度测量新方法

调制偏振光可以作为方位信息的载体,实现方位角度信息的传递,在军事、航天和生物医药等领域有广泛的应用前景.阐述了基于磁光调制偏振光的方位失调角测量原理,分析了现有测量原理中的误差来源.为了从理论方法上提高测量精度,提出了直接计算的方法,将磁光调制后的光强信号直接进行取极值点处理,建立了失调角与极值点之间的方程,详细分析了...     

磁光材料Verdet常数贡献性的讨论

Verdet常数是表征材料磁光性能的重要参数,具有波长和温度依赖性.为了更好地分析入射光波长、温度等对Verdet常数的影响机理,从基础理论切入,分析了现有理论的优缺点.结合光的波粒二象性特性,提出了波动跃迁性贡献理论,即法拉第效应是光的波动性作用以及电偶极跃迁作用带来的贡献之和,波动性对偏转角的贡献为正,跃迁性贡献为负.在抗磁性材料中,波动性贡献大于跃迁性贡献,Verdet常数为正;顺磁性材料中,跃迁性贡献远大于波动性贡献,Verdet常数为负.进而分别以典型抗磁性材料重火石玻璃ZF1和顺磁性材料铽镓石榴石为例,并结合相关数据、参数、模型,对理论进行了验证.试验结果表明,在精确描述材料Verdet常数方面,波动跃迁性贡献理论具有一定的优越性.     

Reversal current observed in micro-and submicro-channel flow under non-continuous DC electric field

In practical applications of biochips and bio-sensors, electrokinetic mechanisms are commonly employed to manipulate and analyze the characteristics of single bio-molecules. To accurately and flexibly control the movement of single molecule within micro-/submicro-fluidic channels, the characteristics of current signals at the initial stage of the flow are systematically studied based on a three-electrode system. The current response of micro-/submicro-fluidic channels filled with different electrolyte solutions in non-continuous external electric field are investigated. It is found, there always exists a current reversal phenomenon, which is an inherent property of the current signals in micro/submicro-fluidics Each solution has an individual critical voltage under which the steady current value is equal to zero The interaction between the steady current and external applied voltage follows an exponential function. All these results can be attributed to the overpotentials of the electric double layer on the electrodes. These results are helpful for the design and fabrication of functional micro/nano-scale fluidic sensors and biochips.     

Structural evolution study of additions of Sb_2S_3 and CdS into GeS_2 chalcogenide glass by Raman spectroscopy

The structures of pseudo-binary GeS_2–Sb_2S_3, GeS_2–CdS, Sb_2S_3–CdS, and pseudo-ternary GeS_2–Sb_2S_3–CdS chalcogenide systems are systematically investigated by Raman spectroscopy. It is shown that a small number of [S_3Ge–GeS_3]structural units(SUs) and-S-S-/S8 groups exist simultaneously in GeS_2 glass which has a three-dimensional continuous network backbone consisting of cross-linked corner-sharing and edge-sharing [GeS_4] tetrahedra. When Sb_2S_3 is added into GeS_2 glass, the network backbone becomes interconnected [GeS_4] tetrahedra and [SbS_3] pyramids. Moreover, Ge atoms in[S_3Ge–GeS_3] SUs tend to capture S atoms from Sb_2S_3, leading to the formation of [S_2Sb–SbS_2] SUs. When CdS is added into GeS_2 glass, [Cd_4GeS_6] polyhedra are formed, resulting in a strong crystallization tendency. In addition, Ge atoms in[S_3Ge–GeS_3] SUs tend to capture S atoms from CdS, resulting in the dissolution of Ge–Ge bond. Co-melting of Sb_2S_3 or CdS with GeS_2 reduces the viscosity of the melt and improves the homogeneity of the glass. The GeS_2 glass can only dissolve up to 10-mol% CdS without crystallization. In comparison, GeS_2–Sb_2S_3 glasses can dissolve up to 20-mol% CdS,implying that Sb_2S_3 could delay the construction of [Cd_4GeS_6] polyhedron and increase the dissolving amount of CdS in the glass.     

半柔性大分子链穿越微孔行为的研究

采用动态蒙特卡罗模拟方法,模拟半柔性大分子链在电场作用下穿越纳米孔道进入球腔的输运过程. 主要研究电场强度及半柔性大分子链的刚性强度对穿孔过程的影响.发现：平均穿孔时间τ随电场强度的增大而减小,τ与链的长度N满足标度关系τ~N^α,并且电场强度E和弯曲能b对标度指数有显著影响. 研究结果表明,当电场强度为中等时,刚性弱和刚性强的大分子的穿孔过程是完全不同的. 研究半柔性大分子链穿越微孔的行为,有助于更深入认识生物大分子在生命体内的输运过程.     

波长可调谐的瓦级连续橙红光激光器

介绍了基于复合腔结构的全固态波长可调谐的连续橙红色激光的输出特性。该复合腔由一个使用周期极化晶体MgO:PPLN的信号光单谐振光参量振荡器和一个LD侧面泵浦Nd:GdVO₄晶体的1 062.9 nm基频光谐振腔构成。s-偏振1 062.9 nm泵浦光抽运单谐振光参量振荡器产生s-偏振信号光腔内独立振荡。通过复合腔结构的优化设计,使独立振荡的p-偏振1 062.9 nm基频光与s-偏振信号光在2个子腔的重叠区内通过Ⅱ类角度匹配KTP晶体的腔内和频过程获得橙红色激光。当MgO:PPLN晶体的调谐温度从30 ℃上升至200 ℃时,s-偏振信号光的中心波长产生红移,导致其与p-偏振1 062.9 nm基频光和频产生的橙红色激光的中心波长从620.2 nm红移至628.9 nm。同时测得中红外波段闲频光的中心波长从3 714.2 nm蓝移至3 438.3 nm。在30 ℃最低设定温度时, 中心波长620.2 nm的橙红色激光和中心波长3 714.2 nm的闲频光最大连续输出功率分别达到2.0 W和2.9 W。     

基于复合腔的波长可调谐连续橙红色激光器

设计并研制了一种基于复合腔结构的波长可调谐、瓦级连续输出的橙红色激光器.该激光器是由半导体激光侧泵Nd∶GdVO_4晶体产生p-偏振1 062.9nm基频光的谐振腔和使用周期性极化晶体MgO∶PPLN(三个极化周期为29.0μm、29.8μm和30.8μm)的单共振光学参量振荡器组成.在两个谐振腔的重叠区域,利用Ⅱ类临界相位匹配KTP晶体对s-偏振信号光与p-偏振1 062.9nm基频光进行腔内和频.通过对MgO∶PPLN晶体进行三个不同极化周期的调谐和30℃~200℃范围内的温度调谐,在三个波段(613.4~619.2nm@29.0μm、620.2~628.9nm@29.8μm和634.4~649.1nm@30.8μm)获得了波长可调谐的橙红色激光连续输出,并在相应波段(3 980.0~3 758.5nm@29.0μm、3 714.2~3 438.3nm@29.8μm和3 278.0~2 940.2nm@30.8μm)获得了波长可调谐的中红外闲频光的连续输出.在30℃最低调谐温度,通过改变晶体的极化周期,在613.4nm、620.2nm和634.4nm处测得最大连续输出功率分别为1.52 W、2.21 W和3.03 W,对应的三束闲频光最大连续输出功率分别为2.36 W@3 980.0nm、3.17 W@3 714.2nm和4.13 W@3 278.0nm.