Reversal current observed in micro-and submicro-channel flow under non-continuous DC electric field

In practical applications of biochips and bio-sensors, electrokinetic mechanisms are commonly employed to manipulate and analyze the characteristics of single bio-molecules. To accurately and flexibly control the movement of single molecule within micro-/submicro-fluidic channels, the characteristics of current signals at the initial stage of the flow are systematically studied based on a three-electrode system. The current response of micro-/submicro-fluidic channels filled with different electrolyte solutions in non-continuous external electric field are investigated. It is found, there always exists a current reversal phenomenon, which is an inherent property of the current signals in micro/submicro-fluidics Each solution has an individual critical voltage under which the steady current value is equal to zero The interaction between the steady current and external applied voltage follows an exponential function. All these results can be attributed to the overpotentials of the electric double layer on the electrodes. These results are helpful for the design and fabrication of functional micro/nano-scale fluidic sensors and biochips.     

Structural evolution study of additions of Sb_2S_3 and CdS into GeS_2 chalcogenide glass by Raman spectroscopy

The structures of pseudo-binary GeS_2–Sb_2S_3, GeS_2–CdS, Sb_2S_3–CdS, and pseudo-ternary GeS_2–Sb_2S_3–CdS chalcogenide systems are systematically investigated by Raman spectroscopy. It is shown that a small number of [S_3Ge–GeS_3]structural units(SUs) and-S-S-/S8 groups exist simultaneously in GeS_2 glass which has a three-dimensional continuous network backbone consisting of cross-linked corner-sharing and edge-sharing [GeS_4] tetrahedra. When Sb_2S_3 is added into GeS_2 glass, the network backbone becomes interconnected [GeS_4] tetrahedra and [SbS_3] pyramids. Moreover, Ge atoms in[S_3Ge–GeS_3] SUs tend to capture S atoms from Sb_2S_3, leading to the formation of [S_2Sb–SbS_2] SUs. When CdS is added into GeS_2 glass, [Cd_4GeS_6] polyhedra are formed, resulting in a strong crystallization tendency. In addition, Ge atoms in[S_3Ge–GeS_3] SUs tend to capture S atoms from CdS, resulting in the dissolution of Ge–Ge bond. Co-melting of Sb_2S_3 or CdS with GeS_2 reduces the viscosity of the melt and improves the homogeneity of the glass. The GeS_2 glass can only dissolve up to 10-mol% CdS without crystallization. In comparison, GeS_2–Sb_2S_3 glasses can dissolve up to 20-mol% CdS,implying that Sb_2S_3 could delay the construction of [Cd_4GeS_6] polyhedron and increase the dissolving amount of CdS in the glass.     

磁光材料Verdet常数贡献性的讨论

Verdet常数是表征材料磁光性能的重要参数,具有波长和温度依赖性.为了更好地分析入射光波长、温度等对Verdet常数的影响机理,从基础理论切入,分析了现有理论的优缺点.结合光的波粒二象性特性,提出了波动跃迁性贡献理论,即法拉第效应是光的波动性作用以及电偶极跃迁作用带来的贡献之和,波动性对偏转角的贡献为正,跃迁性贡献为负.在抗磁性材料中,波动性贡献大于跃迁性贡献,Verdet常数为正;顺磁性材料中,跃迁性贡献远大于波动性贡献,Verdet常数为负.进而分别以典型抗磁性材料重火石玻璃ZF1和顺磁性材料铽镓石榴石为例,并结合相关数据、参数、模型,对理论进行了验证.试验结果表明,在精确描述材料Verdet常数方面,波动跃迁性贡献理论具有一定的优越性.     

波长可调谐的瓦级连续橙红光激光器

介绍了基于复合腔结构的全固态波长可调谐的连续橙红色激光的输出特性。该复合腔由一个使用周期极化晶体MgO:PPLN的信号光单谐振光参量振荡器和一个LD侧面泵浦Nd:GdVO₄晶体的1 062.9 nm基频光谐振腔构成。s-偏振1 062.9 nm泵浦光抽运单谐振光参量振荡器产生s-偏振信号光腔内独立振荡。通过复合腔结构的优化设计,使独立振荡的p-偏振1 062.9 nm基频光与s-偏振信号光在2个子腔的重叠区内通过Ⅱ类角度匹配KTP晶体的腔内和频过程获得橙红色激光。当MgO:PPLN晶体的调谐温度从30 ℃上升至200 ℃时,s-偏振信号光的中心波长产生红移,导致其与p-偏振1 062.9 nm基频光和频产生的橙红色激光的中心波长从620.2 nm红移至628.9 nm。同时测得中红外波段闲频光的中心波长从3 714.2 nm蓝移至3 438.3 nm。在30 ℃最低设定温度时, 中心波长620.2 nm的橙红色激光和中心波长3 714.2 nm的闲频光最大连续输出功率分别达到2.0 W和2.9 W。     

积分型二向反射分布函数几何衰减因子分析改进

有关二向反射分布函数(BRDF)的研究大多集中在模型的建立及应用层面上。模型中起重要作用的几何衰减因子(GAF)大多采用的是现有的模型,而现有模型有在实际应用中存在拐点、自身不能维持有界、模型考虑不完善等局限性。在详细分析了随机表面模型后,提出了修正后的积分型GAF,并通过仿真验证该模型消除BRDF在大反射角时的不良行为,使其在GAF规定的范围内保持有界,所得结果与已有BRDF数据的拟合精度更高,可有效地解释后向反射现象。     

KGW晶体外腔式高功率579nm喇曼黄光激光器

报道了579nm高功率KGd(WO4)2喇曼晶体外腔式喇曼黄光激光器的输出特性.基于808nm脉冲激光二极管侧面泵浦Nd∶YAG陶瓷、腔内BBO电光晶体同步延迟调Q和Ⅰ类临界相位匹配的LBO晶体腔外倍频方案,并通过外腔式KGW晶体Ng轴二阶斯托克斯喇曼频移,获得了579.54nm黄光激光输出.当脉冲信号重复频率为1kHz、532nm泵浦光最高平均功率为5.02W、脉冲宽度为10.1ns时,获得了最高平均功率2.58 W、脉冲宽度7.4ns、峰值功率348.6kW的579.54nm二阶斯托克斯喇曼黄光激光输出;532nm至579.54nm的光-光转化效率为51.4%、斜率效率为54.8%,光束质量因子Mx2-579.54=5.829、My2-579.54=6.336,输出功率不稳定性小于±2.35%.实验表明:外腔式喇曼结构能够高效地获得喇曼黄光,具有很高的光-光转化效率及良好的功率稳定性,并通过脉冲LD结合同步延迟电光调Q可获得高重复频率、高平均功率、窄脉冲宽度和高峰值功率的黄光激光输出.     

方波磁光调制测量在无机械连接的设备间方位传递中的应用

在航天、军事等领域往往需要传递无机械连接的设备之间的空间方位信息,而传统的方位测量系统测量范围小、测量精度低,难以满足系统高精度大范围传递的要求,为此改变传统方法中的调制方式,将方波磁光调制引入了方位测量系统,建立了基于方波磁光调制的方位测量模型。根据马吕斯定律,建立了方波磁光调制后的输出信号模型,并分析了调制后信号的特点。根据调制后信号的表达式与方位角的关系,推导、建立了调制后信号与方位角之间的关系方程,并利用调制后信号的增减性去除了方程的增根,结合调制前后信号的相位对比扩大了方位角的测量范围,最终得到了基于方波磁光调制的方位测量模型,实现了无机械连接的设备之间方位信息的传递。仿真结果表明,提出的基于方波调制的测量方法与传统方法比较,理论测量精度更高、测量范围更广,这为实现空间方位角高精度大范围测量提供了一种参考。     

两不同奇相干态组成的第种四态叠加多模叠加态光场的等阶N次方Y压缩

本文构造了由两不同奇相干态组成的第Ⅲ种四态叠加多模叠加态光场|Ψ_o⁽⁴⁾,Ⅲ>_q.利用新近建立的多模压缩态理论,详细研究了态|Ψ_o⁽⁴⁾,Ⅲ>_q的广义非线性等阶N次方Y压缩特性,结果发现由不呈现等阶高阶压缩效应的两奇相干态线性叠加组成的新量子光场态|Ψ_o⁽⁴⁾,Ⅲ>_q呈现出许多奇异物理现象:1)当压缩阶数N=4m(m=1,2,3,…,…)时,态|Ψ_o⁽⁴⁾,Ⅲ>_q始终恒处于等阶N-Y最小测不准态;2)当压缩阶数N=4m-2(m=1,2,3,…,…)时,在一定条件下,态|Ψ_o⁽⁴⁾,Ⅲ>_q的某一正交分量处于等阶N-Y最小测不准态时,另一正交分量则始终既不处于等阶N-Y最小测不准态,也不呈现等阶N次方Y压缩效应,这种现象称为“半相干态”效应;在另外一些条件下,态|Ψ_o⁽⁴⁾,Ⅲ>_q的两正交分量可分别呈现出等阶N次方Y压缩效应,其压缩特性具有周期性变化的、互补对称的关系.3)当压缩阶数N为奇数时,态|Ψ_o⁽⁴⁾,Ⅲ>_q始终不会呈现等阶N次方Y压缩效应,也不处于等阶N-Y最小测不准态,但在一定条件下可呈现“半相干态”效应.     

Properties of field quantum entropy evolution in the Jaynes--Cummings model with initial squeezed coherent states field

The properties of the field quantum entropy evolution in a system of a single-mode squeezed coherent state field interacting with a two-level atom is studied by utilizing the complete quantum theory, and we focus our attention on the discussion of the influences of field squeezing parameter $\gamma $, atomic distribution angle $\theta $ and coupling strength $g$ between the field and the atom on the properties of the evolution of field quantum entropy. The results obtained from numerical calculation indicate that the amplitude of oscillation of field quantum entropy evolution decreases with the increasing of squeezing parameter $\gamma $, and that both atomic distribution angle $\theta $ and coupling strength $g$ between the field and the atom can influence the periodicity of field quantum entropy evolution.     

多模复共轭虚偶相干态光场的等阶N次方Y压缩与等阶N次方H压缩

本文利用新近建立的多模压缩态理论,详细研究了一种新型的多模复共轭虚偶相干态光场|Ψ_i,e^*(2)>_q的广义非线性等阶N次方Y压缩与等阶N次方H压缩特性.结果发现:1)当压缩阶数N为奇数时,态Ψ_i,e^*(2)>_q在一定条件下总可呈现出周期性变化的、任意阶的等阶N次方Y压缩效应;当腔模总数q与压缩阶数N两者之乘积q·N为奇数时,则在一定条件下态|Ψ_i,e^*(2)>_q又可呈现出周期性变化的、任意阶的等阶N次方H压缩效应.2)态|Ψ_i,e^*(2)>_q与多模偶相干态光场|Ψ_i,e^*(2)>_q与多模虚偶相干态光场|Ψ_i,e⁽²⁾>_q的压缩幅度、压缩条件和压缩特征等完全相同.这一结果再次从理论上证实了多模压缩光中的确存在着“相反压缩”和“压缩简并”这两类新的物理现象.