HIRFL-CSR外靶终端上硅微条探测器阵列的搭建

硅微条探测器因具有很强的位置分辨率与能量分辨率而在世界各大核物理实验室得到广泛应用。中国科学院近代物理研究所研制了性能优越、位置精度达到0.5 mm×0.5 mm的双面硅微条探测器,用于HIRFL-CSR的外靶实验终端谱仪(ETF)上,用作径迹测量以及△E-E望远镜系统△E的探测。硅微条探测器体积小、集成度高,利用柔性印刷电路板(FPCB)引出信号,配合ASIC芯片的前端电路,能够方便地给出每一条的能量信息和位置信息。在此详细阐述了在HIRFL-CSR的ETF上双面硅微条探测器阵列的搭建,并测量了放射源在真空中探测单元的能量分辨本领。结果表明,该硅条探测器的每个探测单元对5~9 MeV能量的α粒子的能量分辨率在1%左右。     

半导体带电粒子探测器的研制及其在空间物理中的应用

阐述了空间辐射环境监测的意义,描述了半导体带电粒子探测器的研制及由其组成的望远镜系统在空间物理中的应用,并给出了用此探测器在卫星上进行地球辐射环境监测、太阳质子事件和地磁暴探测的部分结果.     

硅多条探测器的研制和初步应用

描述了用微电子工艺技术成功研制硅多条探测器的制备工艺技术及测试结果. 这种探测器的灵敏面积为50mm×20mm. P掺杂面被等分成相互平行的，长度为20mm，宽度为3mm的16条，相邻条之间的间距为140μm. 当探测器工作在全耗尽偏压下，每一条的反向漏电流的典型值<2nA.239Pu α粒子的能量分辨为0.5%-0.9%，相邻条之间的相互影响(crosstalk)为4%-8%. 用于 7.2 MeV/u的C束离子测量，得到能量分辨为0.27%.     

Phonon contribution to nonionizing energy loss in silicon detectors

Nonionizing energy loss (NIEL) has been applied to a number of studies concerning displacement damage effects in materials and devices. However, most studies consider only the contribution of displacement damage effects, neglecting the contribution from phonons. In this paper, a NIEL model, which considers the contribution of phonons, has been established using the Monte Carlo code SRIM. The maximum endurable fluence for silicon detectors has been estimated using the equivalent irradiation fluence compared with experimental data for the incident particles. NIEL is proportional to the equivalent irradiation fluence that the detector has received.     

Application of stratified implantation for silicon micro-strip detectors

In the fabrication of a 48 mm×48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus over 50% of strips produced do not meet application requirements. However, the method of stratified implantation not only avoids the P region between the surface of wafers and the P⁺ region, but also overcomes the shadow effect. With the help of the stratified implantation process, a perfect functional P-N junction can be formed, and over 95% of strips meet application requirements.     

Fe/Nb多层膜中离子辐照效应研究(英文)

〗采用磁控溅射技术在Si衬底上沉积Si/\[Fe(10 nm)/Nb(4 nm)/Fe(4 nm)/Nb(4 nm)\]2/ \[Fe(4 nm)/Nb(4 nm)\]4多层膜。 用2 MeV的 Xe离子在室温下辐照多层膜。采用俄歇深度剖析、X射线衍射和振动样品磁强计分析辐照引起的多层膜元素分布、 结构及磁性变化。AES深度剖析谱显示当辐照注量达到1.0×1014 ions/cm2时, 多层膜界面两侧元素开始混合; 当辐照注量达到2.0×1016ions/cm2时, 多层膜层状结构消失, Fe层与Nb层几乎完全混合。XRD谱显示, 当辐照注量达到1.0×1014ions/cm2时, Nb的衍射峰和Fe的各衍射峰的峰位相对于标准卡片向小角方向偏移, 这说明辐照引起Nb基和Fe基FeNb固溶体相的形成;当辐照注量大于1.0×1015 ions/cm2时, 辐照引起非晶相的出现。 VSM测试显示,多层膜的磁性随着结构的变化而变化。 在此实验基础上, 对离子辐照引起界面混合现象的机理进行了探讨。The behavior of the metallic multilayers of Si/\[Fe(10 nm)/Nb(4 nm)/Fe(4 nm)/ Nb(4 nm)\]2/\[Fe(4 nm)/Nb(4 nm)\]4 under 2 MeV Xe ion irradiation has been investigated by depth profile analysis of Auger electron spectroscopy,X ray diffraction and vibrating sample magnetometer. The obtained experimental results show that the inter mixing between Fe and Nb layers occurs in the 1.0×1014 ions/cm2 irradiated multilayer sample which results in the formation of Nb based and Fe based FeNb solid solution. For the samples irradiated to fluence larger than 1.0×1014 ions/cm2, amorphisation is observed, and moreover, the layered structure of the multilayer samples is broken up completely for the samples under 1.0×1016 or 2.0×1016 ions/cm2 irradiation. Vibrating sample magnetometer measurement also reveals that the magnetization of the samples changes with the evolution of the structure of multilayers. Possible mechanism of the modification in Fe/Nb multilayers induced by Xe ion irradiation is briefly discussed.     

半导体望远镜探测系统研制及其在卫星上的应用

简要介绍了由不同厚度的Au-Si面垒和Si(Li)半导体探测器组成的全耗尽带电粒子望远镜系统的制备及其性能,给出了载有该望远镜系统的风云三号卫星（FY-3A）在轨道高度约为830 km辐射区域监测2.9—100 MeV质子和0.15—5.7 MeV电子的结果。In this paper, the performances as well as the production procedure of the charged particle telescope systems consisting of Si(Au) surface barrier detector and Si(Li) detector with different thicknesses were introduced briefly. As an example, the density distributions of the protons and electrons in space detected by the telescope systems mounted on the Fengyun 3 satellite (FY 3A) were also presented.     

Modification of Fe/Cu multilayers under 400 keV Xe20+ irradiation

Two kinds of Fe/Cu multilayers with different modulation wavelength were deposited on cleaved Si(100) substrates and then irradiated at room temperature using 400 keV Xe²⁰⁺ in a wide range of irradiation fluences. As a comparison, thermal annealing at 300—900℃ was also carried out in vacuum. Then the samples were analyzed by XRD and the evolution of crystallite structures induced by irradiation was investigated. The obtained XRD patterns showed that, with increase of the irradiation fluence, the peaks of Fe became weaker, the peaks related to Cu-based fcc solid solution and Fe-based bcc solid solution phase became visible and the former became strong gradually. This implied that the intermixing at the Fe/Cu interface induced by ion irradiation resulted in the formation of the new phases which could not be achieved by thermal annealing. The possible intermixing mechanism of Fe/Cu multilayers induced by energetic ion irradiation was briefly discussed.     

ZnO 紫外探测器的研究

利用水热法生长的N型优质ZnO晶体材料蒸镀了Au、Ag、Al金属,制备出金属-半导体-金属型(MSM)ZnO紫外探测器,测试了五种接触类型的ZnO紫外探测器(Au-ZnO-Au、Ag-ZnO-Ag、Au-ZnO-Al、Ag-ZnO-Al、Al-ZnO-Al)在365nm紫外光光照前后的I-V特性曲线。实验表明Au-ZnO-Au 型、Ag-ZnO-Ag型的探测器的光电流是暗电流的100 万倍,因此,Au-ZnO-Au型、Ag-ZnO-Ag型的ZnO紫外探测器性能比Au-ZnO-Al、Ag-ZnO-Al、Al-ZnO-Al型的优越。ZnO材料的电阻率对ZnO紫外探测器的光电流有较大的影响。在相同偏压下,电阻率越大,探测器的光电流越小。ZnO ultraviolet(UV) detectors with Metal-Semiconductor-Metal(MSM) structure were fabricated by the vacuum evaporation of Au, Ag, and Al on the n-type ZnO single crystal, which was grown with hydrothermal synthesis method. Five types of MSM ZnO detectors(Au-ZnO-Au, Ag-ZnO-Ag, Au-ZnO-Al, Ag-ZnO-Al,Al-ZnO-Al) were illuminated with 365 nm UV light respectively, and their corresponding I-V(Current-Voltage) characteristics were measured. The UV photocurrent values for Au-ZnO-Au and Ag-ZnO-Ag detectors were 1x106 times than their dark current values, and these facts imply that the Au-ZnO-Au and Ag-ZnO-Ag detectors were rather good UV detectors compared to Au-ZnO-Al, Ag-ZnO-Al, Al-ZnO-Al detectors. The photocurrent of the MSM ZnO detectors was also sensitive to the cubic resistance of the ZnO crystal. And it’s found that the higher resistance rate the ZnO crystal the smaller photocurrent value the detector under the same working voltage.