Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process

The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved.     

HIRFL-CSR外靶终端上硅微条探测器阵列的搭建

硅微条探测器因具有很强的位置分辨率与能量分辨率而在世界各大核物理实验室得到广泛应用。中国科学院近代物理研究所研制了性能优越、位置精度达到0.5 mm×0.5 mm的双面硅微条探测器,用于HIRFL-CSR的外靶实验终端谱仪(ETF)上,用作径迹测量以及△E-E望远镜系统△E的探测。硅微条探测器体积小、集成度高,利用柔性印刷电路板(FPCB)引出信号,配合ASIC芯片的前端电路,能够方便地给出每一条的能量信息和位置信息。在此详细阐述了在HIRFL-CSR的ETF上双面硅微条探测器阵列的搭建,并测量了放射源在真空中探测单元的能量分辨本领。结果表明,该硅条探测器的每个探测单元对5~9 MeV能量的α粒子的能量分辨率在1%左右。     

半导体带电粒子探测器的研制及其在空间物理中的应用

阐述了空间辐射环境监测的意义,描述了半导体带电粒子探测器的研制及由其组成的望远镜系统在空间物理中的应用,并给出了用此探测器在卫星上进行地球辐射环境监测、太阳质子事件和地磁暴探测的部分结果.     

高性能PIN-硅探测器的研制及其在高能放射性核束实验中的应用测试

鉴于国内核物理实验对高性能硅探测器有大量需求,而国外对中国进行技术封锁,满足实验需求的高性能探测器不易获得.中国科学院近代物理研究所在原有制备工艺基础上首次采用套刻技术,有效减少了光刻及腐蚀过程造成的Si O2沾污,大幅提高了探测器性能和成品率.本文对采用该工艺研制的300μm厚,有效面积50 mm×50 mm硅探测器进行电学性能测试和在束探测性能测试.探测器在–45 V耗尽电压下,其漏电流小于40 n A,对5 Me V左右的a粒子的能量分辨(σ)约为45 ke V.将该探测器作为能量沉积(ΔE)探测器,利用250 Me V/u的¹¹C放射性束流及其在次级碳靶上的反应产物对探测器进行了探测性能测试.测试结果显示,该探测器对于C元素的电荷数Z的分辨为0.17,与文献中记录的国外生产的同类型探测器的实验数据(Z分辨0.19)相当,可以满足中高能放射性束实验对轻质量区粒子鉴别的要求.     

超薄型外延硅dE／dX探测器及其在核实验中的应用

本文介绍了厚度为５．２、６、７和１０μｍ，有效面积为２８－１５４ｍｍ＾２的超薄型外延硅ｄＥ／ｄＸ探测器及其研制工艺、主要用途、测试结果及在核物理实验中的应用。     

Phonon contribution to nonionizing energy loss in silicon detectors

Nonionizing energy loss (NIEL) has been applied to a number of studies concerning displacement damage effects in materials and devices. However, most studies consider only the contribution of displacement damage effects, neglecting the contribution from phonons. In this paper, a NIEL model, which considers the contribution of phonons, has been established using the Monte Carlo code SRIM. The maximum endurable fluence for silicon detectors has been estimated using the equivalent irradiation fluence compared with experimental data for the incident particles. NIEL is proportional to the equivalent irradiation fluence that the detector has received.     

Application of stratified implantation for silicon micro-strip detectors

In the fabrication of a 48 mm×48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus over 50% of strips produced do not meet application requirements. However, the method of stratified implantation not only avoids the P region between the surface of wafers and the P⁺ region, but also overcomes the shadow effect. With the help of the stratified implantation process, a perfect functional P-N junction can be formed, and over 95% of strips meet application requirements.     

半导体望远镜探测系统研制及其在卫星上的应用

简要介绍了由不同厚度的Au-Si面垒和Si(Li)半导体探测器组成的全耗尽带电粒子望远镜系统的制备及其性能,给出了载有该望远镜系统的风云三号卫星（FY-3A）在轨道高度约为830 km辐射区域监测2.9—100 MeV质子和0.15—5.7 MeV电子的结果。In this paper, the performances as well as the production procedure of the charged particle telescope systems consisting of Si(Au) surface barrier detector and Si(Li) detector with different thicknesses were introduced briefly. As an example, the density distributions of the protons and electrons in space detected by the telescope systems mounted on the Fengyun 3 satellite (FY 3A) were also presented.     

双面硅多条探测器的测试

介绍了由中国科学院近代物理研究所和北京大学微电子研究院联合研制的双面硅多条探测器的初步测试过程及测试结果。测试内容包括: 探测器的电特性、 能量分辨率、 二维能谱、 条间串扰（crosstalk）。在-25 V全耗尽偏压下, 各条的反向漏电流均小于10 nA, 对于5.486 MeV的α粒子, 正面各条的能力分辨率在1.5%左右, 条间串扰在6%左右; 背面各条能量分辨率稍差, 在3%左右, 其条间串扰在1%左右。同时对进口的Micron BB1直流耦合单边读出的双面硅条探测器做了相同测试, 并进行了性能对比。The testing of a doubled-sided multi-strip silicon detector manufactured by Institute of Modern Physics of CAS and Peking University were introduced. The electrical characteristics and energy resolution, two dimensional spectrum, crosstalk were presented. The reverse leak current of each strip is smaller than 10 nA under bias voltage of 25 V. The energy resolution of strips on the front side is about 1.5%, but a little worse for the backside strips, about 3%. The level of crosstalk is about 6% for the front side, 1% for the backside. Same tests were carried out on the commercial Micron BB1 detector and a comparison was presented.