硅多条探测器的研制和初步应用

描述了用微电子工艺技术成功研制硅多条探测器的制备工艺技术及测试结果. 这种探测器的灵敏面积为50mm×20mm. P掺杂面被等分成相互平行的，长度为20mm，宽度为3mm的16条，相邻条之间的间距为140μm. 当探测器工作在全耗尽偏压下，每一条的反向漏电流的典型值<2nA.239Pu α粒子的能量分辨为0.5%-0.9%，相邻条之间的相互影响(crosstalk)为4%-8%. 用于 7.2 MeV/u的C束离子测量，得到能量分辨为0.27%.     

Thermal experiment of silicon PIN detector

The experiment of this paper is the thermal test of the leakage current of silicon PIN detector. Raising temperature may cause the detector to increase leakage current, decrease depletion and increase noise. Three samples are used in the experiment. One (called ΔE) is the sample of 100 μm in thickness. The other two (called E₁ and E₂) are stacks of five detectors of 1000 μm in thickness. All of them are 12 mm in diameter. The experiment has been done for 21 hours and with power on continuously. The samples have undergone more than 60℃ for about one hour. They are not degenerated when back to the room temperature. The depletion rate is temperature and bias voltage related. With the circuit of the experiment and temperature at 35℃, ΔE is still depleted while E₁ and E₂ are 94.9% and 99.7% depleted respectively. The noises of the samples can be derived from the values at room temperature and the thermal dependence of the leakage currents. With the addition of the noise of the pre-amplifier, the noises of E₁, E₂ and ΔE at 24℃ are 16.4, 16.3, and 10.5 keV (FWHM) respectively while at 35℃ are about 33.6, 33.1, and 20.6 keV (FWHM) respectively.     

双面硅多条探测器的测试

介绍了由中国科学院近代物理研究所和北京大学微电子研究院联合研制的双面硅多条探测器的初步测试过程及测试结果。测试内容包括: 探测器的电特性、 能量分辨率、 二维能谱、 条间串扰（crosstalk）。在-25 V全耗尽偏压下, 各条的反向漏电流均小于10 nA, 对于5.486 MeV的α粒子, 正面各条的能力分辨率在1.5%左右, 条间串扰在6%左右; 背面各条能量分辨率稍差, 在3%左右, 其条间串扰在1%左右。同时对进口的Micron BB1直流耦合单边读出的双面硅条探测器做了相同测试, 并进行了性能对比。The testing of a doubled-sided multi-strip silicon detector manufactured by Institute of Modern Physics of CAS and Peking University were introduced. The electrical characteristics and energy resolution, two dimensional spectrum, crosstalk were presented. The reverse leak current of each strip is smaller than 10 nA under bias voltage of 25 V. The energy resolution of strips on the front side is about 1.5%, but a little worse for the backside strips, about 3%. The level of crosstalk is about 6% for the front side, 1% for the backside. Same tests were carried out on the commercial Micron BB1 detector and a comparison was presented.