Temperature Dependent In-Plane Anisotropic Magnetoresistance in HfTe_5 Thin Layers

We report the observation of in-plane anisotropic magnetoresistance and planar Hall effect in non-magnetic HfTe₅ thin layers.The observed anisotropic magnetoresistance as well as its sign is strongly dependent on the critical resistivity anomaly temperature T_p.Below T_p,the anisotropic magnetoresistance is negative with large negative magnetoresistance.When the in-plane magnetic field is perpendicular to the current,the negative longitudinal magnetoresistance reaches its maximum.The negative longitudinal magnetoresistance effect in HfTe₅ thin layers is dramatically different from that induced by the chiral anomaly as observed in Weyl and Dirac semimetals.One potential underlying origin may be attributed to the reduced spin scattering,which arises from the in-plane magnetic field driven coupling between the top and bottom surface states.Our findings provide valuable insights for the anisotropic magnetoresistance effect in topological electronic systems and the device potential of HfTe5 in spintronics and quantum sensing.     

In-Plane Magnetization-Induced Corner States in Bismuthene

We theoretically demonstrate that the electronic second-order topological insulator with robust corner states,having a buckled honeycomb lattice, can be realized in bismuthene by inducing in-plane magnetization. Based on the sp³ Slater–Koster tight-binding model with parameters extracted from first-principles results, we show that spin-helical edge states along zigzag boundaries are gapped out by the in-plane magnetization whereas four robust in-gap electronic corner states at the int...     

1T-NbSeTe电子结构的角分辨光电子能谱

过渡金属二硫族化物因其广泛存在超导、电荷密度波等新奇的物理现象成为了近些年来凝聚态物理研究中的一大热点,同时这也为研究超导和电荷密度波等电子序之间的相互作用提供了典型的材料体系.本文利用角分辨光电子能谱对1T结构的NbSeTe单晶进行系统的研究,揭示了其电子结构.沿高对称方向的能带测量发现, 1T-NbSeTe布里渊区M点附近存在一个范霍夫奇点,能量位于费米能以下约250 meV处.对能带色散的仔细分析发现该体系中没有明显电子-玻色子(声子)耦合带来的能带扭折.基于上述实验结果,对过渡金属二硫族化物中电荷密度波和超导的产生以及1T-NbSeTe中电荷密度波和超导被抑制的可能原因进行了讨论.     

Spin Transport Properties of MnBi2Te4-Based Magnetic Tunnel Junctions

The van der Waals heterojunctions,stacking of different two-dimensional materials,have opened unprecedented opportunities to explore new physics and device concepts.Here,combining the density functional theory with non-equilibrium Green’s function technique,we systematically investigate the spin-polarized transport properties of van der Waals magnetic tunnel junctions (MTJs),Cu/MnBi₂Te₄/MnBi₂Te₄/Cu and Cu/MnBi₂Te₄/hBN/n·MnBi_2...