| Temperature Dependent In-Plane Anisotropic Magnetoresistance in HfTe5 Thin Layers |
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| 作者姓名： | 王鹏 侯涛 汤方栋 王培培 韩玉磊 任亚飞 曾华凌 张立源 乔振华 |
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| 作者单位： | International Center for Quantum Design of Functional Materials;Department of Physics;Solid State Nanophysics |
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| 基金项目： | Supported by the National Key R&D Program(Grant Nos.2017YFB0405703,2017YFA0205004,and 2018YFA0306600);the National Natural Science Foundation of China(Grant Nos.11974327,11474265,11674295,11674024,and 11874193);the Fundamental Research Funds for the Central Universities(Grant Nos.WK2030020032 and WK2340000082);Anhui Initiative in Quantum Information Technologies,and the Shenzhen Fundamental Subject Research Program(Grant No.JCYJ20170817110751776);the USTC Center for Micro and Nanoscale Research and Fabrication。 |
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| 摘 要： | We report the observation of in-plane anisotropic magnetoresistance and planar Hall effect in non-magnetic HfTe5 thin layers.The observed anisotropic magnetoresistance as well as its sign is strongly dependent on the critical resistivity anomaly temperature Tp.Below Tp,the anisotropic magnetoresistance is negative with large negative magnetoresistance.When the in-plane magnetic field is perpendicular to the current,the negative longitudinal magnetoresistance reaches its maximum.The negative longitudinal magnetoresistance effect in HfTe5 thin layers is dramatically different from that induced by the chiral anomaly as observed in Weyl and Dirac semimetals.One potential underlying origin may be attributed to the reduced spin scattering,which arises from the in-plane magnetic field driven coupling between the top and bottom surface states.Our findings provide valuable insights for the anisotropic magnetoresistance effect in topological electronic systems and the device potential of HfTe5 in spintronics and quantum sensing.
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| 关 键 词： | MAGNETORESISTANCE ANISOTROPIC attributed |
Temperature Dependent In-Plane Anisotropic Magnetoresistance in HfTe_5 Thin Layers |
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| Peng Wang,Tao Hou,Fangdong Tang,Peipei Wang,Yulei Han,Yafei Ren,Hualing Zeng,Liyuan Zhang,Zhenhua Qiao.Temperature Dependent In-Plane Anisotropic Magnetoresistance in HfTe5 Thin Layers[J].Chinese Physics Letters,2021(1):86-91. |
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| Authors: | Peng Wang Tao Hou Fangdong Tang Peipei Wang Yulei Han Yafei Ren Hualing Zeng Liyuan Zhang Zhenhua Qiao |
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| Affiliation: | (International Center for Quantum Design of Functional Materials,Hefei National Laboratory for Physical Sciences at the Microscale,Synergetic Innovation Centre of Quantum Information and Quantum Physics,CAS Key Laboratory of Strongly Coupled Quantum Matter Physics,and Department of Physics,University of Science and Technology of China,Hefei 230026,China;Department of Physics,Southern University of Science and Technology,and Shenzhen Institute for Quantum Science and Engineering,Shenzhen 518055,China;Solid State Nanophysics,Max Plank Institute for Solid State Research,Stuttgart,Germany) |
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| Abstract: | We report the observation of in-plane anisotropic magnetoresistance and planar Hall effect in non-magnetic HfTe_5 thin layers.The observed anisotropic magnetoresistance as well as its sign is strongly dependent on the critical resistivity anomaly temperature T_p.Below T_p, the anisotropic magnetoresistance is negative with large negative magnetoresistance.When the in-plane magnetic field is perpendicular to the current,the negative longitudinal magnetoresistance reaches its maximum.The negative longitudinal magnetoresistance effect in Hfe_5 thin layers is dramatically different from that induced by the chiral anomaly as observed in Weyl and Dirac semimetals.One potential underlying origin may be attributed to the reduced spin scattering,which arises from the in-plane magnetic field driven coupling between the top and bottom surface states.Our findings provide valuable insights for the anisotropic magnetoresistance effect in topological electronic systems and the device potential of HfTe_5 in spintronics and quantum sensing. |
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