Temperature Dependent In-Plane Anisotropic Magnetoresistance in HfTe_5 Thin Layers

We report the observation of in-plane anisotropic magnetoresistance and planar Hall effect in non-magnetic HfTe₅ thin layers.The observed anisotropic magnetoresistance as well as its sign is strongly dependent on the critical resistivity anomaly temperature T_p.Below T_p,the anisotropic magnetoresistance is negative with large negative magnetoresistance.When the in-plane magnetic field is perpendicular to the current,the negative longitudinal magnetoresistance reaches its maximum.The negative longitudinal magnetoresistance effect in HfTe₅ thin layers is dramatically different from that induced by the chiral anomaly as observed in Weyl and Dirac semimetals.One potential underlying origin may be attributed to the reduced spin scattering,which arises from the in-plane magnetic field driven coupling between the top and bottom surface states.Our findings provide valuable insights for the anisotropic magnetoresistance effect in topological electronic systems and the device potential of HfTe5 in spintronics and quantum sensing.     

二维α-In2Se2的铁电性与器件应用

铁电体具有可控的非易失电极化,在现代电子学中有着广泛的应用,例如大容量电容器、新型二极管、铁电场效应晶体管、铁电隧道结等．伴随着电子元器件的不断微型化,传统铁电体面临着极大的挑战,即在器件减薄过程中受限于临界尺寸效应,铁电性很难稳定存在于纳米乃至单原子层二维极限厚度下．鉴于二维范德华材料具有界面饱和、层间相互作用弱、易于实现二维极限厚度等特性,因此,在二维材料家族中寻找室温二维铁电性将是解决传统铁电体瓶颈的有效方法．本文将首先回顾近年来二维铁电物性研究的相关背景,并针对其中在技术应用上较为重要的α-In２Se３ 面外铁电性作详细介绍,最后总结基于二维α-In２Se３ 的铁电器件应用进展。     

二维α-In_2Se_3的铁电性与器件应用

铁电体具有可控的非易失电极化,在现代电子学中有着广泛的应用,例如大容量电容器、新型二极管、铁电场效应晶体管、铁电隧道结等.伴随着电子元器件的不断微型化,传统铁电体面临着极大的挑战,即在器件减薄过程中受限于临界尺寸效应,铁电性很难稳定存在于纳米乃至单原子层二维极限厚度下.鉴于二维范德华材料具有界面饱和、层间相互作用弱、易于实现二维极限厚度等特性,因此,在二维材料家族中寻找室温二维铁电性将是解决传统铁电体瓶颈的有效方法.本文将首先回顾近年来二维铁电物性研究的相关背景,并针对其中在技术应用上较为重要的α-In_2Se_3面外铁电性作详细介绍,最后总结基于二维α-In_2Se_3的铁电器件应用进展.     

Magnetic Phase Transition in Two-Dimensional CrBr3 Probed by a Quantum Sensor

Recently, magnetism in two-dimensional(2 D) van der Waals(vd W) materials has attracted wide interests. It is anticipated that these materials will stimulate discovery of new physical phenomena and novel applications. The capability to quantitatively measure the magnetism of 2 D magnetic vd W materials is essential to understand these materials. Here we report on quantitative measurements of ferromagnetic-to-paramagnetic phase transition of an atomically thin(down to 11 nm) vd W magnet, namely C...