Temperature Dependent In-Plane Anisotropic Magnetoresistance in HfTe_5 Thin Layers

We report the observation of in-plane anisotropic magnetoresistance and planar Hall effect in non-magnetic HfTe₅ thin layers.The observed anisotropic magnetoresistance as well as its sign is strongly dependent on the critical resistivity anomaly temperature T_p.Below T_p,the anisotropic magnetoresistance is negative with large negative magnetoresistance.When the in-plane magnetic field is perpendicular to the current,the negative longitudinal magnetoresistance reaches its maximum.The negative longitudinal magnetoresistance effect in HfTe₅ thin layers is dramatically different from that induced by the chiral anomaly as observed in Weyl and Dirac semimetals.One potential underlying origin may be attributed to the reduced spin scattering,which arises from the in-plane magnetic field driven coupling between the top and bottom surface states.Our findings provide valuable insights for the anisotropic magnetoresistance effect in topological electronic systems and the device potential of HfTe5 in spintronics and quantum sensing.     

Multi-carrier transport in ZrTe_5 film

Single-layered zirconium pentatelluride(ZrTe_5)has been predicted to be a large-gap two-dimensional(2D)topological insulator,which has attracted particular attention in topological phase transitions and potential device applications.Herein,we investigated the transport properties in Zras a function of thickness,ranging from a few nm to several hundred nm.We determined that the temperature of the resistivity anomaly peaktends to increase as the thickness decreases.Moreover,at a critical thickness of～40 nm,the dominating carriers in the films change from n-type to p-type.A comprehensive investigation of Shubnikov–de Hass(SdH)oscillations and Hall resistance at variable temperatures revealed a multi-carrier transport tendency in the thin films.We determined the carrier densities and mobilities of two majority carriers using the simplified two-carrier model.The electron carriers can be attributed to the Dirac band with a non-trivial Berry phaseπ,while the hole carriers may originate from surface chemical reaction or unintentional doping during the microfabrication process.It is necessary to encapsulate the Zrin an inert or vacuum environment to potentially achieve a substantial improvement in device quality.