Resistive switching characteristics of Ti/ZrO2/Pt RRAM device

In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory devices. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The conduction mechanisms for low and high resistance states are dominated by the ohmic conduction and the trap-controlled space charge limited current(SCLC) mechanism, respectively. The effect of a set compliance current on the switching parameters is also studied: the low resistance and reset current are linearly dependent on the set compliance current in the log–log scale coordinate; and the set and reset voltage increase slightly with the increase of the set compliance current. A series circuit model is proposed to explain the effect of the set compliance current on the resistive switching behaviors.     

Interface-related switching behaviors of amorphous Pr0.67Sr0.33MnO3-based memory cells

The resistive switching properties in amorphous Pr0.67Sr0.33MnO3 films deposited by pulsed laser deposition are investigated.Reproducible and bipolar counter-8-shape and 8-shape switching behaviours of Au/Pr0.67Sr0.33MnO3 /F：SnO2 junctions are obtained at room temperature.Dramatically,the coexistence of two switching polarities could be reversibly adjusted by an applied voltage range.The results allocated those two switching types to areas of different defect densities beneath the same electrode.The migration of oxygen vacancies and the trapping effect of electrons under an applied electric field play an important role.An interface-effect-related resistance switching is proposed in an amorphous Pr0.67Sr0.33MnO3-based memory cell.     

Interface-related switching behaviors of amorphous Pr_0.67Sr_0.33MnO₃-based memory cells

The resistive switching properties in amorphous Pr0.67Sr0.33MnO3 films deposited by pulsed laser deposition are investigated.Reproducible and bipolar counter-8-shape and 8-shape switching behaviours of Au/Pr0.67Sr0.33MnO3 /F:SnO2 junctions are obtained at room temperature.Dramatically,the coexistence of two switching polarities could be reversibly adjusted by an applied voltage range.The results allocated those two switching types to areas of different defect densities beneath the same electrode.The migration of oxygen vacancies and the trapping effect of electrons under an applied electric field play an important role.An interface-effect-related resistance switching is proposed in an amorphous Pr0.67Sr0.33MnO3-based memory cell.     

Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO_3 thin films

We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO3 thin films in various temperature ranges. The room temperature current–voltage(I–V) curve exhibits a well-established polarization-modulated memristor behavior. At low temperatures( 253 K), the I–V curve shows an open circuit voltage(OCV), which possibly originates from the dielectric relaxation effects, accompanied with a current hump due to the polarization reversal displacement current. While at relative higher temperatures( 253 K), the I–V behaviors are governed by both space-charge-limited conduction(SCLC) and Ohmic behavior. The polarization reversal is able to trigger the conduction switching from Ohmic to SCLC behavior, leading to the observed ferroelectric resistive switching. At a temperature of 298 K, there occurs a new resistive switching hysteresis at high bias voltages, which may be related to defect-mediated effects.     

The Second Threshold Field of Charge-Density-Wave Conductor Rb0.3MoO3 in High Temperature Range

The switching and threshold properties of quasi-one-dimensional charge-density-wave conductor rubidium blue bronze Rb0.3MoO3 single crystals are investigated in a comparative high and large temperature range. Beyond the limit temperature 50K of Littlewood‘s theory, even up to about lOOK, typical sharp switching to negative or zero differential resistance is observed in E-I characteristic curves. Correspondingly, an obvious switching between two conducting states, from a lowly conducting state to a highly conducting state, is observed in the I-E characteristic curves in the same temperature range. Temperature dependence of the second threshold field ET2 accompanied by this kind of high field switching behaviour is firstly obtained. These new observations are discussed in the mechanism of the current inhomogeneity and redistribution due to the existence of transverse energy barriers suggested by Zhang et al. [Solid State Commun. 85 (1993) 121]     

A Lateral Regulator Diode with Field Plates for Light-Emitting-Diode Lighting

A lateral current regulator diode(CRD) with field plates is proposed and experimentally demonstrated.The proposed CRD is based on the junction field-effect transistor(JFET) structure.A cathode field plate is adopted to alleviate the channel-length modulation effect and to improve the saturated Ⅰ-Ⅴ characteristics.An anode field plate is induced to achieve a high breakdown voltage V_B of the CRD.The influence of the key device parameters on the Ⅰ-Ⅴ characteristics of the lateral CRD are discussed.Experimental results show that the proposed CRD presents good Ⅰ-Ⅴ characteristics with a high VB about 180 V and a low knee voltage(V_k) below 3 V.Furthermore,the proposed CRD has a negative temperature coefficient.The well characteristic of the proposed CRD makes it a cost-effective solution for light-emitting-diode lighting.     

Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory

We investigate the resistive switching characteristics of a Cu/VOx/W structure. The VOx film is deposited by radio- frequency magnetron sputtering on the Cu electrode as a dielectric layer. The prepared VOx sample structure shows reproducible bipolar resistive switching characteristics with ultra-low switching voltage and good cycling endurance. A modified physical model is proposed to elucidate the typical switching behavior of the vanadium oxide-based resistive switching memory with a sudden resistance transition, and the self-saturation of reset current as a function of compliance current is observed in the test, which is attributed to the conducting mechanism is discussed in detail. growth pattern of the conducting filaments. Additionally, the related     

Switching Behavior Induced by Electric and Magnetic Fields in （La0.73Bi0.27）0.67Ca0.33MnO3

Both electric and magnetic field-induced switching behaviors between a high resistive state and a low resistive one are observed in （La0.73Bi0.27）0.67Ca0.33MnO3. The effects of magnetoresistance a.nd electric-resistance suggest that the applied electric field and magnetic field greatly tune the percolative paths in the phase-separated system. According to the experimental results, the switching behaviors may come from the coexistence of the charge ordering state, and localized and freedom ferromagnetic states, in which the external field destroys partially the localized ferromagnetic states and charge ordering leads to the ferromagnetic state growth, which causes a switch between a high resistive state and low resistive one. This makes the doped manganite a good system for both electric and magnetic field sensor materials.     

Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications

Resistive switching characteristics of CuxO films grown by plasma oxidation process at room temperature are investigated. Both bipolar and unipolar stable resistive switching behaviours are observed and confirmed by repeated current voltage measurements. It is found that the RESET current is dependent on SET compliance current. The mechanism behind this new phenomenon can be understood in terms of conductive filaments formation/rupture with the contribution of Joule heating.     

NON-EQUILIBRIUM MICROWAVE RESPONSE OF Yba2Cu3O7-δ GRANULAR THIN FILMS UNDER MAGNETIC FIELDS

Microwave responses of YBa₂Cu₃O_7-δ(YBCO) granular film have been studied at the microwave frequency of 30.5 GHz. In the absence of a magnetic field the dependence of a normal microwave response on the bias current is observed at a temperature close to T_c. When a magnetic field ranged from 5.0 mT to 33.0 mT is applied, the responses broaden and shift toward a lower temperature. In the superconducting state, the responses were found to be highly dependent on the magnetic field. For the current equal to 5.0mA and a magnetic field above 17.0mT the response increases and did not vanish even at a very low temperature, the fact is believed to be correlated to the anisotropic character of the structure.     

Influence of DCM dye doping on the magnetic field dependent electroluminescence in organic light emitting diodes

The DCM dye doped organic electroluminescence devices with structure of ITO/NPB/Alq 3 : DCM/Alq 3 /LiF/Al were fabricated. From 15 K to room temperature, the magnetic field dependent of electroluminescence (MEL) of devices was investigated. Our observations indicated that the MEL is composed of two effects in different regimes: a low field (0≤B≤40 mT) effect and a high field (B 40 mT) effect. For undoped devices, the low field effect exhibits a rapid rising with the increasing field, and the high field effect shows a slow increase and gradually saturates at room temperature. For doped devices, the low field rapid increase is also present, whereas the high field effect displays a decrease with the increasing field. The larger the injection current is, the more apparent the high field decrease is. In addition, the doped device demonstrates less temperature dependence of the high field effect than undoped device, although the undoped devices also present high field decrease of electroluminescence at low temperatures (T≤150 K). Based on the energy level trapping effect due to dye doping and magnetic field modulated triplet exciton annihilation, the experimental results are carefully explained.     

Room-temperature giant magnetotranstance effect in single-phase multiferroics

Single-phase multiferroic materials are usually considered useless because of the weak magnetoelectric effects,low operating temperature,and small electric polarization induced by magnetic orders.As a result,current studies on applications of the magnetoelectric effects are mainly focusing on multiferroic heterostructures and composites.Here we report a room-temperature giant effect in response to external magnetic fields in single-phase multiferroics.A low magnetic field of 1000 Oe applied on the spin-driven multiferroic hexaferrites BaSrCo_2 Fe_(11)AlO_(22) and Ba_(0.9)Sr_(1.1)Co_2 Fe_(11)AlO_(22) is able to cause a huge change in the linear magnetoelectric coefficient(α_E=dE/dH) by several orders,leading to a giant magnetotranstance(GMT) effect at room temperature.The GMT effect is comparable to the well-known giant magnetoresistance(GMR) effect in magnetic multilayers,and thus opens up a door toward practical applications for single-phase multiferroics.     

NON-EQUILIBRIUM MICROWAVE RESPONSE OF Yba2Cu3O7-δ GRANULAR THIN FILMS UNDER MAGNETIC FIELDS

Microwave responses of YBa₂Cu₃O_7-δ(YBCO) granular film have been studied at the microwave frequency of 30.5 GHz. In the absence of a magnetic field the dependence of a normal microwave response on the bias current is observed at a temperature close to T_c. When a magnetic field ranged from 5.0 mT to 33.0 mT is applied, the responses broaden and shift toward a lower temperature. In the superconducting state, the responses were found to be highly dependent on the magnetic field. For the current equal to 5.0mA and a magnetic field above 17.0mT the response increases and did not vanish even at a very low temperature, the fact is believed to be correlated to the anisotropic character of the structure.     

Spin and Charge Currents through a Quantum Dot Connected to Ferromagnetic Leads

We investigate the spin polarized current through a quantum dot connected to ferromagnetic leads in the presence of a finite spin-dependent chemical potential. The effects of the spin polarization of the leads p and the external magnetic field B are studied. It is found that both the magnitude and the symmetry of the current are dependent on the spin polarization of the leads. When the two ferromagnetic leads are in parallel configuration, the spin polarization p has an insignificant effect on the spin current, and an accompanying charge current appears with the increase of p. When the leads are in antiparallel configuration, however, the effect of p is distinct. The charge current is always zero regardless of the variation of p in the absence of B. The peaks appearing in the pure spin current are greatly suppressed and become asymmetric as p is increased. The applied magnetic field B results in an accompanying charge current in both the parallel and antiparallel configurations of the leads. The characteristics of the currents are explained in terms of the density of states of the quantum dot.     

Current Induced Non-Volatile Resistive Switching Effect in Silicon Devices with Large Magnetoresistance

We develop a non-volatile resistive switching device in a Si-SiO2-Mg structure with an on/off ratio of about 4.5 at a certain transition voltage after being stimulated by a large current. It is observed that the resistance transition voltage Vt shifts reproducibly under a reversed large current. By applying a reading voltage in the range of Vt, non-volatile resistive switching phenomena with an endurance of more than 80 cycles are observed. Moreover, it is also found that the magnetic field could shift Vt to higher values, yielding a voltage dependent room-temperature magnetoresistance in the range of 10^3 % at 1 T. The multifunctional properties of the silicon device suggested by this work may be beneficial to the silicon based industry.     

The effect of interfacial energy anisotropy on planar interface instability in a succinonitrile alloy under a small temperature gradient

The morphological stability of a planar interface with different crystallographic orientations is studied under a small positive temperature gradient using a transparent model alloy of succinonitrile.Novel experimental apparatus is constructed to provide a temperature gradient of about 0.37 K/mm.Under this small temperature gradient,the planar interface instability depends largely on the crystallographic orientation.It is shown experimentally that the effect of interfacial energy anisotropy on planar interface stability cannot be neglected even in a small temperature gradient system.Higher interfacial energy anisotropy leads the planar interface to become more unstable,which is different from the stabilizing effect of the interfacial energy on the planar interface.The experimental results are in agreement with previous theoretical calculations and phase field simulations.     

Strain Tunable Berry Curvature Dipole,Orbital Magnetization and Nonlinear Hall Effect in WSe_2 Monolayer

The electronic topology is generally related to the Berry curvature,which can induce the anomalous Hall effect in time-reversal symmetry breaking systems.Intrinsic monolayer transition metal dichalcogenides possesses two nonequivalent K and K’ valleys,having Berry curvatures with opposite signs,and thus vanishing anomalous Hall effect in this system.Here we report the experimental realization of asymmetrical distribution of Berry curvature in a single valley in monolayer WSe₂ via applying uniaxial strain to break C_3v symmetry.As a result,although the Berry curvature itself is still opposite in K and K’ valleys,the two valleys would contribute equally to nonzero Berry curvature dipole.Upon applying electric field E,the emergent Berry curvature dipole D would lead to an out-of-plane orbital magnetization M ∝ D·E,which further induces an anomalous Hall effect with a linear response to E²,known as nonlinear Hall effect.We show the strain modulated transport properties of nonlinear Hall effect in monolayer WSe₂ with moderate hole-doping by gating.The second-harmonic Hall signals show quadratic dependence on electric field,and the corresponding orbital magnetization per current density M/J can reach as large as 60.In contrast to the conventional Rashba-Edelstein effect with in-plane spin polarization,such current-induced orbital magnetization is along the out-of-plane direction,thus promising for high-efficient electrical switching of perpendicular magnetization.     

Resistive Switching Behavior in Amorphous Aluminum Oxide Film Grown by Chemical Vapor Deposition

The repeatable bipolar resistive switching phenomenon is observed in amorphous Al2O3 prepared by metalorganic chemical vapor deposition on ITO glass, with ITO as the bottom electrode and Ag as the top electrode. The crystal structure, morphology, composition and optical properties of Al2O3 thin films are investigated by x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and ultraviolet-visible-infrared spectroscopy, respectively. The electronic character of Ag/Al2O3/ITO structure is tested by an Agilent B1500A. The device shows a typical bipolar resistive switching behavior under the dc voltage sweep mode at room temperature. The variation ratio between HRS and LRS is larger than nearly three orders of magnitude, which indicates the good potential of this structure in future resistive random access memory （ReRAM） applications. Based on the conductive filament model, the high electric field is considered the main reason for the resistive switching according to our measurements.     

An analytical model for cross-Kerr nonlinearity in a four-level N-type atomic system with Doppler broadening

We present an analytical model for cross-Kerr nonlinear coefficient in a four-level N-type atomic medium under Doppler broadening.The model is applied to87 Rb atoms to analyze the dependence of the cross-Kerr nonlinear coefficient on the external light field and the temperature of atomic vapor.The analysis shows that in the absence of electromagnetically induced transparency(EIT)the cross-Kerr nonlinear coefficient is zero,but it is significantly enhanced when the EIT is established.It means that the cross-Kerr effect can be turned on/off when the external light field is on or off.Simultaneously,the amplitude and the sign of the cross-Kerr nonlinear coefficient are easily changed according to the intensity and frequency of the external light field.The amplitude of the cross-Kerr nonlinear coefficient remarkably decreases when the temperature of atomic medium increases.The analytical model can be convenient to fit experimental observations and applied to photonic devices.     

CdS/Si nanofilm heterojunctions based on amorphous silicon films:Fabrication,structures,and electrical properties

Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and Cd S nanofilms on the ITO glass in turn.The relation of current density to applied voltage(I-V)shows the obvious rectification effect.From the analysis of the double logarithm I-V curve it follows that below~2.73 V the electron behaviors obey the Ohmic mechanism and above~2.73 V the electron behaviors conform to the space charge limited current(SCLC)mechanism.In the SCLC region part of the traps between the Fermi level and conduction band are occupied,and with the increase of voltage most of the traps are occupied.It is believed that Cd S/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.