含水合物沉积物多相渗流特性研究进展

天然气水合物作为一种储量大、无污染的清洁能源近些年受到了广泛关注. 近20年来,中国进行了较大范围的陆海域天然气水合物储层勘探与储量预测.2017年,中国地质调查局牵头对南海神狐海域的天然气水合物进行了基于降压渗流原理的试验性开采.国内外已进行的水合物试采工程面临着气体产量低、出砂较多等问题,其最主要的原因之一是开发过程中沉积物内复杂多相渗流机理尚不明晰.本文综述了平行毛细管模型、Kozeny模型等广泛应用于天然气水合物开发渗流分析的理论模型,对比分析了水合物开发多尺度渗流过程模拟方法,简述了国内外含水合物沉积物渗透率测试、渗流过程中沉积物物性演变以及水合物开采室内模拟等方面的渗流实验进展,总结了矿场尺度的天然气水合物储层开采过程中产气数值模拟手段,展望了多相渗流模型、储层原位含水合物样品室内测试及结构与物性演化、矿场尺度数值模拟与水平井压裂技术等应用研究的未来方向与挑战.      

含水合物沉积物多相渗流特性研究进展

天然气水合物作为一种储量大、无污染的清洁能源近些年受到了广泛关注.近20年来,中国进行了较大范围的陆海域天然气水合物储层勘探与储量预测. 2017年,中国地质调查局牵头对南海神狐海域的天然气水合物进行了基于降压渗流原理的试验性开采.国内外已进行的水合物试采工程面临着气体产量低、出砂较多等问题,其最主要的原因之一是开发过程中沉积物内复杂多相渗流机理尚不明晰.本文综述了平行毛细管模型、Kozeny模型等广泛应用于天然气水合物开发渗流分析的理论模型,对比分析了水合物开发多尺度渗流过程模拟方法,简述了国内外含水合物沉积物渗透率测试、渗流过程中沉积物物性演变以及水合物开采室内模拟等方面的渗流实验进展,总结了矿场尺度的天然气水合物储层开采过程中产气数值模拟手段,展望了多相渗流模型、储层原位含水合物样品室内测试及结构与物性演化、矿场尺度数值模拟与水平井压裂技术等应用研究的未来方向与挑战.     

Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor

Nitrogen plasma passivation(NPP) on(111) germanium(Ge) was studied in terms of the interface trap density,roughness, and interfacial layer thickness using plasma-enhanced chemical vapor deposition(PECVD). The results show that NPP not only reduces the interface states, but also improves the surface roughness of Ge, which is beneficial for suppressing the channel scattering at both low and high field regions of Ge MOSFETs. However, the interfacial layer thickness is also increased by the NPP treatment, which will impact the equivalent oxide thickness(EOT) scaling and thus degrade the device performance gain from the improvement of the surface morphology and the interface passivation. To obtain better device performance of Ge MOSFETs, suppressing the interfacial layer regrowth as well as a trade-off with reducing the interface states and roughness should be considered carefully when using the NPP process.     

Theoretical and experimental analysis of the effects of the series resistance on luminous efficacy in GaN-based light emitting diodes

In this paper, a new equivalent circuit model of GaN-based light emitting diodes （LEDs） is established. The impact of the series resistance to luminous efficacy is simulated using the MATLAB software. GaN-based LEDs with different n- contact electrode materials （LEDs with Ni/Au and LEDs with Cr/Au） are fabricated. By comparing and analyzing the results of performances, we concluded that both the series resistance and the carrier loss could affect the luminous efficacy severely. LEDs with lower series resistance have higher luminous efficacy and its efficiency droop is alleviated simultaneously. To improve luminous efficacy, the fabrication process should be optimized for lower series resistance.     

Experimental clarification of orientation dependence of germanium PMOSFETs with AlzO3/GeOx/Ge gate stack

An extensive and complete experimental investigation with a full layout design of the channel direction was carried out for the first time to clarify the orientation dependence of germanium p-channel metal-oxide-semiconductor field-effect transistors （PMOSFETs）. By comparison of gate trans-conductance, drive current, and hole mobility, we found that the performance trend with the substrate orientation for Ge PMOSFET is （110）〉（111） ~ （100）, and the best channel direction is （110）/[110]. Moreover, the （110） device performance was found to be easily degraded as the channel direction got off from the [ 110] orientation, while （100） and （111） devices exhibited less channel orientation dependence. This experimental result shows good matching with the simulation reports to give a credible and significant guidance for Ge PMOSFET design.