Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode

A controllable etching process for indium zinc oxide （IZO） films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices （OLEDs）, a sup- pression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide （ITO） anode etched by a conventional strong etchant of aqua regia.     

Fabrication and temperature-dependent photoluminescence spectra of Zn–Cu–In–S quaternary nanocrystals

A series of Zn-Cu-In-S nanocrystals （ZCIS NCs） are prepared and the optical properties of the ZCIS NCs are tuned by adjusting the reaction time. It is interesting to observe that the temperature-dependent photoluminescence （PL） spectra of the ZCIS NCs show a redshift with decreasing intensity at low temperature （50-280 K） and a blueshift at high temperature （318--403 K）. The blueshift can be explained by the thermally active phonon-assisted tunneling from the excited states of the low-energy emission band to the excited states of the high-energy emission band.     

Horizontally slotted photonic crystal nanobeam cavity with embedded active nanopillars for ultrafast direct modulation

A horizontally slotted photonic crystal nanobeam cavity with an embedded active nanopillar structure is proposed for ultrafast direct modulation. By designing the thicknesses of both the nanobeam and the horizontal slot layer, the quality factor (Q factor) and the mode volume (Vn ) of the proposed cavity can be engineered independently. As a result, the spontaneous emission (SpE) rate is enhanced with a small Vn of 2.4 while the SpE rate and the cavity photon lifetime have an optimal Q factor of ～ 1000. In our simulation, the modulation bandwidth could be enhanced up to 170 GHz with different emission linewidths of the active nanopillar.     

A1GaInP-Si glue bonded high performance light emitting diodes

We propose a new method of using conductive glue to agglutinate GaAs based A1CaInP light emitting diodes （LEDs） onto silicon substrate, and the absorbing GaAs layer is subsequently removed by grinding and selective wet etching. It was found that A1GaInP-Si glue agglutinated LEDs have larger saturation current and luminous intensity than the conventional LEDs working at the same injected current. The luminous intensity of the new device is as much as 1007.4 mcd at a saturation current of 125 mA without being encapsulated, while the conventional LEDs only have 266.2 mcd at a saturation current of 105 mA. The luminescence intensity is also found to increase by about 3.2% after working at 50 mA for 768 h. This means that the new structured LEDs have good reliability performance.     

发光层掺杂对红光OLED性能影响研究

制备高效率、高亮度的红光有机发光二极管是显示器实现全彩色的关键,对高性能的红光有机发光二极管器件研究具有十分重要的意义.本文主要研究了掺杂剂(DCJTB)浓度对红光有机发光二极管性能影响.实验采用真空热蒸镀的方法,选取结构为ITO／2-TNATA(20 nm)/NPB(30 nm)/AlQ(50 nm):(X%)DCJTB／AlQ(30 nm)／LiF(0.8 nm)／Al(100 nm)的红光器件,在高准确度膜厚控制仪的监控下,实现了有机薄膜功能材料的精确蒸镀.研究表明:红光掺杂剂掺杂浓度为(2.5~3.0)%时,在12 V电压下,可以得到发光亮度最高达到8 900 cd/m²,发光效率大于2.8 cd/A,且发光光谱波长为610~618 nm较为理想的红光有机发光二极管器件.     

以蓝色发光材料DPVBi为基质的白色发光器件

白色有机发光器件是实现彩色平板显示的重要方案之一。利用蓝色发光材料DPVBi[4，4′—(2，2—苯乙烯基)—1，1′—联苯]掺杂红光染料DCJTB[4—氰甲烯基—2—叔丁基—6—(1，1，7，7—四甲基久洛尼定基—9—烯炔基—4H—吡喃)]作发光层制备了白色发光器件。研究了DPVBi掺杂不同浓度IDCJTB薄膜的光致发光性质，根据光致发光结果，制备了以DPVBi掺杂不同浓度DCJTB作发光层的电致发光器件，其结构为ITO／GuPc／NPB／DPVBi：DCJTB／Alq3／LiF／Al。当DCJTB质量分数为0．0008时，器件实现了白色发光(色度x=0．25，y=0．32)，电致发光和光致发光的掺杂比例基本相符，表明器件的白色发光主要是由基质DPVBi向掺杂剂DCJTB的能量传递产生的。研究还发现：白色器件随电压升高，光谱中蓝色成分相对于红色成分的比例略有增加，文章对此现象进行了分析。该白光器件在14V时达到最高亮度7822cd／cm^2，在20mA／cm^2电流密度下的亮度为-489cd／cm^2，最大流明效率为1．75lm／W。     

高效率荧光粉转换型白光有机发光二极管的制备和性能研究

制备了一种荧光粉转换型白光有机发光二级管(pc-WOLEDs),器件由发蓝光的荧光装置和发红光的无机荧光粉Sr₂Si₅N₈∶Eu²⁺颜色转化层(CCL)复合组成,前者通过真空镀膜得到,后者采用旋涂法制备。CCL发射的红光和未被吸收的蓝光复合产生白光,最大发光效率为22.1 cd/A,最大能量效率为11.26 lm/W,外量子效率为10.2%。该pc-WOLEDs的色坐标为(0.32, 0.34),非常接近标准白光(0.33, 0.33)。稳定性实验结果显示,该器件在不同电流密度下表现出了良好的稳定性。     

Increased performance of an organic light-emitting diode by employing a zinc phthalocyanine based composite hole transport layer

We demonstrate that the electroluminescent performances of organic light-emitting diodes are significantly improved by employing a zinc phthalocyanine （ZnPc）-based composite hole transport layer （c-HTL）. The optimum ris-（8-hydroxyquinoline）aluminum （Alq3）-based organic light-emitting diode with a c-HTL exhibits a lower turn-on voltage of 2.8 V, a higher maximum current efficiency of 3.40 cd/A and a higher maximum power efficiency of 1.91 lm/W, which are superior to those of the conventional device （turn-on voltage of 3.8 V, maximum current efficiency of 2.60 cd/A, and maximum power efficiency of 1.21 lm/W）. We systematically studied the effects of different kinds of N’-diphenyl-N,N’-bis（1-naphthyl）（1,1’-biphenyl）-4,4’diamine （NPB）：ZnPc c-HTL. Meanwhile, we also investigate their mechanisms different from that in the case of using ZnPc as buffer layer. The specific analysis is based on the absorption spectra of the hole transporting material and current density–voltage characteristics of the corresponding hole-only devices.     

两种谐振腔长度的微腔有机电致发光器件模拟

微腔的谐振腔长度直接影响微腔有机电致发光器件(MOLED)的发光特性,根据微腔器件的相关计算公式运用传输矩阵法,分别对微腔长度L=λ/2和L=λ(λ:中心波长)时,在微腔内不同位置激子复合发光的电致发光谱(EL)进行模拟计算和比较。发现:微腔长度为L=λ/2时,峰值均为520nm,半峰全宽均为17nm,激子处在微腔的中心位置时,峰值强度和积分强度均为最大。L=λ时,激子在腔内不同位置时,峰值均为520nm,半峰全宽均12nm,在腔的中心区域时,与L=λ/2时正好相反,峰值强度和积分强度最小。分析后判断是因为两种长度的微腔内电场强度分布不同,激子位于腔内电场的最大值处发光性能最好。说明要制作出高效率的MOLED,要区别不同谐振腔长度,并使激子处于腔内电场最大处。     

Novel Field Emission Organic Light Emitting Diodes with Dynode

This work presents novel field emission organic light emitting diodes(FEOLEDs) with dynode,in which an organic EL light-emitting layer is used instead of an inorganic phosphor thin film in the field emission display(FED).The proposed FEOLEDs introduce field emission electrons into organic light emitting diodes(OLEDs),which exhibit a higher luminous efficiency than conventional OLED.The field emission electrons emitted from the carbon nanotubes(CNTs) cathode and to be amplified by impact the dynode in vacuum.These field emission electrons are injected into the multi-layer organic materials of OLED to increase the electron density.Additionally,the proposed FEOLED increase the luminance of OLED from 10 820 cd/m2 to 24 782 cd/m2 by raising the current density of OLED from an external electron source.The role of FEOLED is to add the quantity of electrons-holes pairs in OLED,which increase the exciton and further increase the luminous efficiency of OLED.Under the same operating current density,the FEOLED exhibits a higher luminous efficiency than that of OLED.     

Cysteine-390 is the binding site of luminous substance with symplectin, a photoprotein from Okinawan squid, Symplectoteuthis oualaniensis

Symplectin is a photoprotein from a luminous squid, Symplectoteuthis oualaniensis. It has a luminous substrate, dehydrocoelenterazine (DCZ), linked through a thioether bond with a cysteine residue. We have proven the binding site of luminous substrate in symplectin by using an artificial analogue of DCZ, ortho-fluoro-DCZ (F-DCZ). F-DCZ-symplectin emitting strong blue light was reconstituted from apo-symplectin and F-DCZ. Proteolytic digestion of the reconstituted F-DCZ-symplectin afforded peptides including C(390)GLK-F-DCZ (amide), which was detected with a house assembled nano-LC-ESI-Q-TOF-MS. The chromo-peptide derived from the F-DCZ-symplectin after luminescence showed the lower molecular mass than that before the luminescence by 12 mass units, corresponding to the loss of one carbon atom upon emitting light. Thus, we have concluded that F-DCZ analogue binds to Cys390 in symplectin so as to emit light.     

调焦辐射层析成像法重建三维发光体辐射场

提出了用一个摄像机重建三维发光体辐射场分布的方法。连续的三维发光体可以看成若干个互相平行的二维发光断层的组合。对发光体某断层进行聚焦摄象,得到的图像是该断层的高斯像和其他断层分别聚焦摄像,可得到组辐射图像,再用图像反汪算法,即可重建各断层的辐射场。实验模拟了具有我断层的三维发光体,获得了初步结果。     

Nonlinear effect of the structured light profilometry in the phase-shifting method and error correction

Digital structured light （SL） profilometry is increasingly used in three-dimensional （3D） measurement technology. However, the nonlinearity of the off-the-shelf projectors and cameras seriously reduces the measurement accuracy. In this paper, first, we review the nonlinear effects of the projector-camera system in the phase-shifting structured light depth measurement method. We show that high order harmonic wave components lead to phase error in the phase-shifting method. Then a practical method based on frequency domain filtering is proposed for nonlinear error reduction. By using this method, the nonlinear calibration of the SL system is not required. Moreover, both the nonlinear effects of the projector and the camera can be effectively reduced. The simulations and experiments have verified our nonlinear correction method.     

两种不同结构的蓝色有机发光二极管

制备了两种不同结构的蓝色发光器件。其中阻挡层结构的器件为：ITO／CuPc/NPB/TPBi/Alq/MgAg;夹心型结构的器件为：ITO／CuPc/NPB/DPVBi:perylene/Alq/MgAg。两种器件的发射光谱分别为NPB和perylene的特征光谱,最高亮度和最大效率分别为3700cd/cm^2、6123cd/cm^2和0.781m/W,0.831m/W。然而,两种器件稳定性差异较大。用能级结构图分析了两种器件的发光特性和稳定性差异的原因。     

Study on the characteristics of linac based THz light source

There are many methods based on linac for THz radiation production. As one of the options for the Beijing Advanced Light, an ERL test facility is proposed for THz radiation. In this test facility, there are 4 kinds of methods to produce THz radiation： coherent synchrotron radiation （CSR）, synchrotron radiation （SR）, low gain FEL oscillator, and high gain SASE FEL. In this paper, we study the characteristics of the 4 kinds of THz light sources.     

Study of the characteristics of a scintillation array and single pixels for nuclear medicine imaging applications

By using a pixelized Nal（T1） crystal array coupled to a R2486 PSPMT, the characteristics of the array and of a single pixel, such as the light output, energy resolution, peak-to-valley ratio （P/V） and imaging performance of the detector were studied. The pixel size of the NaI（TI） scintillation pixel array is 2 mm×2 mm×5 mm. There are in total 484 pixels in a 22×22 matrix. In the pixel spectrum an average peak-to-valley ratio （P/V） of 16 was obtained. In the image of all the pixels, good values for the Peak-to- Valley ratios could be achieved, namely a mean of 17, a maximum of 45 and the average peak FWHM （the average value of intrinsic spatial resolution） of 2.3 mm. However, the PSPMT non-uniform response and the scintillation pixels array inhomogeneities degrade the imaging performance of the detector.     

陶瓷基片薄膜电致发光器件

本文报道了一种新颖的陶瓷基片薄膜电致发光器件(CSTFEL),使用高介电常数的陶瓷片作器件的基片,同时又作为器件中的绝缘层,陶瓷片表面无需抛光处理,直接制作发光器件,工艺简单,用市电50Hz,220V驱动,亮度大于30cd/m2,寿命大于10000小时.     

Fine-tuning the thicknesses of organic layers to realize high-efficiency and long-lifetime blue organic light-emitting diodes

By using p-bis(p-N,N-diphenyl-aminostyryl)benzene doped 2-tert-butyl-9,10-bis-β-naphthyl)-anthracene as an emitting layer,we fabricate a high-efficiency and long-lifetime blue organic light emitting diode with a maximum external quantum efficiency of 6.19% and a stable lifetime at a high initial current density of 0.0375 A/cm2.We demonstrate that the change in the thicknesses of organic layers affects the operating voltage and luminous efficiency greater than the lifetime.The lifetime being independent of thickness is beneficial in achieving high-quality full-colour display devices and white lighting sources with multi-emitters.     

有机微腔绿色发光二极管

光学微腔是指尺寸在光波长量级的光学微型谐振腔。微腔结构可以使腔内物质和光场的相互作用与体材料相比发生很大变化,出现了自发辐射谱线窄化和增强等腔效应。利用这些腔效应,可以改善有机发光器件的性能。采用微腔结构,优化设计并研制了有机微腔绿色发光二极管,器件结构为Glass/DBR/ITO/NPB/Alq∶Rubrene/Alq/MgAg,获得了最大亮度40100 cd/m2、最大发光效率为6.44 cd/A、半峰全宽为28 nm的纯绿色有机微腔电致发光器件。而与之比较的无腔器件最大亮度为22580 cd/m2、最大发光效率为2.98 cd/A、半峰全宽为120 nm。相同电流密度下微腔电致发光谱的峰值发射强度是无腔器件的4.2倍。结果表明将微腔结构引入有机电致发光器件中,不但改善了发光的色纯度,而且使器件的发光效率和亮度都得到明显增强。     

Enhanced Device Performances of Blue‐Emitting PLEDs Coupled with Silver‐Nanoicosahedrons

Silver‐nanoicosahedron particles (AgNIPs) are produced by chemical reduction and photochemical methods and doped into the hole transport layer (HTL) or emissive layer (EML) of blue‐emitting polymer light‐emitting diodes (PLEDs) to improve their luminous efficiency. The optimal distributed‐densities of the AgNIPs are determined from current density–voltage–luminance measurements at different doping concentrations. The AgNIP dopant doses that maximize the average luminous efficiency of the proposed PLED are 6.71 µg cm^?2 in EML (achieving 3.48 cd A^?1) and 6.88 µg cm^?2 in HTL (achieving 3.35 cd A^?1). Although the luminous efficiencies of the blue‐emitting PLEDs fabricated by both doping methods are not significantly different, the maximum plasmonic enhancement (around 30‐fold) of the blue‐emitting PLED with AgNIPs in EML is red‐shifted to the green region (≈530 nm in the electroluminescence spectrum), seriously degrading the luminescent monochromaticity of the blue‐emitting PLED. The maximum plasmonic enhancement (around 33‐fold) of blue‐emitting PLED with AgNIPs in HTL occurred at 430 nm, overlapping the localized surface‐plasmon resonance extinctions of the AgNIPs in HTL (425 nm), thus favoring the enhancement of fluorescence emission. Therefore, to enhance the large‐area emission of blue‐emitting PLEDs, the AgNIPs should be doped in the HTL rather than the EML.