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2.
理论容量大且过电位低的层状氢氧化物(LDHs)是极有前景的超级电容电池和析氧反应的电极材料;然而,体相LDHs的低电导率和活性位点不足增加了电极的内阻,降低了电极容量和产氧效率.本文采用两步法制备了聚苯胺包覆的MoO42?插层的镍钴层状双金属氢氧化物复合电极(M-LDH@PANI).随着LDH中MoO42?含量的增加,针状的LDH微球逐渐演化为具有较高比表面积的片状M-LDH微球,这为整个电极提供了更多的电化学位点.此外,非晶态的聚苯胺包覆提高了复合电极的电导率.在引入适量MoO42?插层离子时,M-LDH@PANI表现出显著强化的储能和催化性能.所获得的M-LDH@PANI-0.5在析氧反应中表现出优越的电催化活性(10 mA cm?2时的过电位为266 mV),作为超级电容电池电极则具有864.8 C g?1的高容量.采用M-LDH@PANI-0.5作为正极及以活性炭作为负极组装的超级电容电池在功率密度为8,300.0 W kg?1时能量密度为44.6 Wh kg?1,且具有优异的循环稳定性(10000次循环后保留83.9%的初始容量).本文为LDH基材料的阴离子插层改性增强材料性能的机理提供了一个非传统的解释.在上述研究基础上,采用射线衍射(XRD)、X射线光电子能谱(XPS)、扫描电子显微镜(SEM)、高分辨透射电镜(HRTEM)和比表面积测试(BET)等手段对样品进行了深入表征.XRD结果表明,MoO42?插层的LDH材料的层间晶面(003)的峰随着MoO42?含量的增加而逐渐消失,这是由于晶面间距越大越容易受到晶粒细化的影响,间距大的晶格更容易受到破坏,导致晶格的展宽和弱化,从而间接证明MoO42?的成功插层.SEM、HRTEM和BET测试结果表明,MoO42?的含量对材料的形貌和比表面积具有重大影响.利用XPS对样品的价态进行了研究,发现随着MoO42?含量的增加,Co和Ni的价态没有明显变化.电化学测试结果表明,电极的储能和催化性能随MoO42?含量的增加而先增加后减小.利用理论计算分析了MoO42?在LDH中的插层行为,发现少量的MoO42?有利于扩大LDH的层间间距,而过量的MoO42?则会与LDH的H原子结合,从而与电解液中的OH?竞争,导致复合电极的电化学性能下降.此外,MoO42?插层的片状微球能有效调节材料的去质子化能,大大加速电极表面的氧化还原反应.因此,MoO42?插层能够显著强化LDH基材料的超级电容电池电极和OER催化剂电化学性能. 相似文献
3.
非线性粘弹性拟静态问题与非线性弹性静力问题对应原理 总被引:7,自引:0,他引:7
本文应用多重单边拉氏变换导出了非线性粘弹性拟静态问题与非线性弹性静力问题的对应关系,从而把过去认为只有线性条件下存在的粘弹性——弹性对应原理拓展到了非线性范畴 相似文献
4.
A high detection efficiency calorimeter which is used to detect γ-rays with energies from 1 MeV up to 10 MeV as well as light charged particles has been proposed. Design of the geometry, results of the crystal tests and Monte Carlo simulations are presented in this paper. The simulation results confirm that the calorimeter can obtain high detection efficiency and good energy resolution with the current designed geometry. And the calorimeter is competent for the future External Target Facility (ETF) experiments. 相似文献
5.
6.
The large single-crystal diamond with FeS doping along the(111) face is synthesized from the FeNi–C system by the temperature gradient method(TGM) under high-pressure and high-temperature(HPHT). The effects of different FeS additive content on the shape, color, and quality of diamond are investigated. It is found that the(111) face of diamond is dominated and the(100) face of diamond disappears gradually with the increase of the FeS content. At the same time, the color of the diamond crystal changes from light yellow to gray-green and even gray-yellow. The stripes and pits corrosion on the diamond surface are observed to turn worse. The effects of FeS doping on the shape and surface morphology of diamond crystal are explained by the number of hang bonds in different surfaces of diamond. It can be shown from the test results of the Fourier transform infrared(FTIR) spectrum that there exists an S element in the obtained diamond. The N element content values in different additive amounts of diamond are calculated. The XPS spectrum results demonstrate that our obtained diamond contains S elements that exist in S–C and S–C–O forms in a diamond lattice. This work contributes to the further understanding and research of FeS-doped large single-crystal diamond characterization. 相似文献
7.
Effects of carbon convection field on large diamond growth under high-pressure high-temperature conditions 下载免费PDF全文
Large diamond crystals were successfully synthesized by FeNi-C system using temperature gradient method under high-pressure high-temperature conditions. The assembly of the growth cell was improved and the growth process of diamond was investigated. Effects of the symmetry of carbon convection field around the growing diamond crystal were investigated systematically by adjusting the position of seed crystal in the melted catalyst/solvent. The results indicate that morphologies and metal inclusion distributions of the synthetic diamond crystals vary obviously in both symmetric and non-symmetric carbon convection fields with temperature. Moreover, finite element method was applied to analyze carbon convection mode of the melted catalyst/solvent around the diamond crystal. This work is helpful for understanding the growth mechanism of diamond. 相似文献
8.
利用温度梯度法在NiMnCo-Cu-C体系、于5.5 GPa、1250℃条件下进行了宝石级金刚石单晶的生长研究,结果发现,Cu片在触媒中的放置位置和其在金属触媒中所占体积分数对宝石级金刚石单晶的生长具有明显影响.当Cu片放置在碳源和触媒之间时,将不会有充足的碳源扩散到籽晶上,晶体无法生长;但放在触媒中其他位置,体积分数适当时,不会对晶体生长有明显影响.随着Cu体积分数增加,优质晶体生长将变得困难,当体积分数在20;时,晶体有生长,但晶体内部跟表面明显存在由于包裹体存在造成的生长坑洞;当体积分数在40;左右时,晶体将不再生长.不过当Cu在触媒中的体积分数适当时,会降低碳源在触媒中的输运,从而对抑制自发核生长起到一定的作用. 相似文献
9.
介绍了一种双维位置灵敏CsI(Tl)闪烁探测器, 利用GEANT4对它进行了蒙特卡罗模拟, 得到了RIB 17N的位置分布谱及探测器的空间位置分辨, 模拟结果与实验测量值很好地吻合。给出了影响探测器分辨的主要因素及改进方案。A two dimensional position sensitive CsI(Tl) scintillation detector readout with PSPMT was introduced. The performance of detector was simulated by using Monte Carlo code GEANT4. The position spectrum of RIB 17N and the detector’s position resolution were obtained, and the simulation results accorded with the experimental ones. The main factors, which can affect performance of the detector, and some planned detector improvements were presented. 相似文献
10.
The performance of a double sided silicon strip detector (DSSSD), which is used for the position and energy detection of heavy ions, is reported. The analysis shows that although the incomplete charge collection (ICC) and charge sharing (CS) effects of the DSSSD give rise to a loss of energy resolution, the position information is recorded without ambiguity. Representations of ICC/CS events in the energy spectra are shown and their origins are confirmed by correlation analysis of the spectra from both the junction side and ohmic side of the DSSSD. 相似文献