Effect of FeS doping on large diamond synthesis in FeNi-C system

The large single-crystal diamond with FeS doping along the(111) face is synthesized from the FeNi–C system by the temperature gradient method(TGM) under high-pressure and high-temperature(HPHT). The effects of different FeS additive content on the shape, color, and quality of diamond are investigated. It is found that the(111) face of diamond is dominated and the(100) face of diamond disappears gradually with the increase of the FeS content. At the same time, the color of the diamond crystal changes from light yellow to gray-green and even gray-yellow. The stripes and pits corrosion on the diamond surface are observed to turn worse. The effects of FeS doping on the shape and surface morphology of diamond crystal are explained by the number of hang bonds in different surfaces of diamond. It can be shown from the test results of the Fourier transform infrared(FTIR) spectrum that there exists an S element in the obtained diamond. The N element content values in different additive amounts of diamond are calculated. The XPS spectrum results demonstrate that our obtained diamond contains S elements that exist in S–C and S–C–O forms in a diamond lattice. This work contributes to the further understanding and research of FeS-doped large single-crystal diamond characterization.     

N型半导体金刚石的研究现状与展望

作为半导体材料的金刚石具有宽的禁带宽度和高的热导率、介质击穿场强等优异性质,因此其应用前景广阔.P型金刚石发展较N型金刚石成熟.因为缺乏可实用的N型金刚石材料,这使得金刚石半导体器件的应用难以实现.因此N型半导体金刚石成为研究者关注的焦点.论文从掺杂元素和制备方法两方面详细介绍了国内外N型金刚石的研究现状.硼与磷或硫元素共掺杂获得N型金刚石的研究取得了较大进展;利用化学气相沉积法和离子注入法制备N型半导体金刚石研究较多且取得了一定进展.高压高温下的温度梯度法便于掺杂调控金刚石性能,因而利用该法合成N型半导体金刚石大单晶值得尝试.     

立方氮化硼体积分数对颗粒增强铝基复合材料性能的影响

在高压条件下制备了具有高致密性的立方氮化硼(c-BN)颗粒增强铝基复合材料,研究了颗粒增强相c-BN的体积分数对铝基复合材料性能的影响.对c-BN颗粒增强铝基复合材料的致密性、组分、布氏硬度以及热导率等方面的影响进行了表征.研究结果表明:使用高压的方法可以有效降低基体与增强相反应生成的新相、提高材料的致密性和样品洁净度,样品的相对密度在96.3;～98.5;之间;随着c-BN体积分数的增加,复合材料的硬度逐渐增大,布氏硬度在32.4～78.2 HB之间;热导率在191.5～198.5 W/(m·K)之间,高体积分数c-BN铝基复合材料的热导率高于低体积分数的热导率.高压方法为复合材料的制备提供了新手段和思路.     

金刚石合成用触媒的应用及展望

金刚石是集多种极限性能于一身并可在各种严苛环境下工作的理想材料.触媒材料能降低金刚石高温高压合成条件并使金刚石合成得以工业化.触媒对金刚石的科学研究和工业技术的提高是十分重要的.本文介绍了触媒材料的发现历程及触媒在金刚石合成中的作用机理;从触媒所包含的金属触媒和非金属触媒两大类分别综述了各种触媒的研究现状.在研究上述各触媒在金刚石合成中的合成条件及合成效果的基础上对这两类触媒的使用特点进行了总结.由此指出金属触媒中的合金触媒最适合应用在工业生产上,非金属触媒有利于模拟天然金刚石的成因,具有潜在的研究价值.最后本文对今后触媒的发展方向进行了展望.     

有限元法在金刚石合成中的应用进展

金刚石以其优异的性能广泛应用于国防工程、机械加工、电子科技等领域,其需求量也日益增大。有限元法适用于复杂几何结构和物理问题的模拟分析,由此开辟了有限元法应用于金刚石合成和相应设备优化的新途径。阐述了有限元方法在六面顶压机及金刚石合成腔体工艺方面的应用进展。首先,考虑静力、应力强度、应力分布和形变等影响因素,对铰链梁和工作缸进行模拟分析,运用有限元法对顶锤的作用、破坏机理及新型顶锤设计进行探讨;其次,总结有限元法在金刚石腔体内的温度场、压力场、电学场等研究中的应用进展;最后,对有限元法在金刚石合成中的应用前景进行展望。     

Ib型金刚石大单晶的限形生长

金刚石的限形生长有利于其后续加工.对于磨料级金刚石限形生长的研究已经比较透彻,但金刚石大单晶的限形生长尚缺乏全面系统的研究.本文以Fe Ni(64wt%:36wt%)合金为触媒,利用高温高压下的温度梯度法在5.6 GPa时对不同温度下分别沿(100)面和(111)面生长的Ib型金刚石大单晶的晶形进行了研究.研究表明:随着温度的升高,沿(100)晶面生长的金刚石大单晶的晶形分别为板状、塔状直至尖塔状,而沿(111)面生长的金刚石大单晶的晶形则分别为塔状和板状;分析了不同温度下分别沿(100)面和(111)面生长金刚石大单晶不同晶形高径比的变化情况.利用不同压力和温度下的金刚石大单晶合成实验绘制了沿(100)和(111)面生长金刚石大单晶的晶形在V形生长区域内的分布示意图,表明沿(111)面生长的金刚石大单晶V形区温度下限明显比以(100)面生长的高,而沿这两面生长金刚石大单晶的V形区温度上限差别并不明显.对不同生长面V形区温度上下限的差别进行了解释,据此实现了Ib型金刚石大单晶的限形生长.     

激光拉曼光谱法在金刚石研究中的应用

金刚石作为一种具有最高硬度、最高热导率以及最宽透光波段等多种极限性能的功能材料,在多个领域都有广泛的应用.近年来,人工合成金刚石,特别是对金刚石掺杂改性成为国内外研究的重点.因此,对金刚石组成及结构缺陷的研究分析成为了重要环节.激光拉曼光谱分析法是研究分析金刚石组成及结构的重要途径,本文综述了近年来激光拉曼光谱分析法在金刚石中的应用,涉及到该方法的基本原理以及在单晶金刚石表征、金刚石薄膜和金刚石聚晶等方面的应用.     

Synthesis and Characteristics of Type Ib Diamond Doped with NiS as an Additive

Large diamond single crystals doped with NiS are synthesized under high pressure and high temperature. It is found that the effects on the surface and shape of the synthesized diamond crystals are gradually enhanced by increasing the NiS additive amount. It is noted that the synthesis temperature is necessarily raised to 1280℃ to realize the diamond growth when the additive amount reaches 3.5% in the synthesis system. The results of Fourier transform infrared spectroscopy(FTIR) demonstrate that S is incorporated into the diamond lattice and exists in the form of C–S bond. Based on the FTIR results, it is found that N concentration in diamond is significantly increased, which are ascribed to the NiS additive. The analysis of x-ray photoelectron spectroscopy shows that S is present in states of C–S, S–O and C–S–O bonds. The relative concentration of S compared to C continuously increases in the synthesized diamonds as the amount of additive NiS increases. Additionally,the electrical properties can be used to characterize the obtained diamond crystals and the results show that diamonds doped with NiS crystals behave as n-type semiconductors.