SnSxSe2-x单晶纳米片的可控制备与表征

锡二硫族化合物可以通过改变硫和硒的含量来连续调控三元合金材料的带隙、载流子浓度等物理化学性质,在电子和光电子器件应用上具有巨大的潜力。本文采用化学气相沉积(CVD)技术可控地制备了不同元素组分的SnS_xSe_2-x(x=0,0.2,0.5,0.8,1.0,1.2,1.5,1.8,2.0)单晶纳米片。采用扫描电子显微镜(SEM)、原子力显微镜(AFM)、能量色散X射线光谱(EDS)、透射电子显微镜(TEM)以及拉曼光谱等手段对SnS_xSe_2-x纳米片进行了综合表征。结果表明本方法成功实现了元素百分比可调的SnS_xSe_2-x单晶纳米片的可控制备。重点研究了依赖于元素百分比的SnS_xSe_2-x的拉曼特征谱,实验结果与基于密度泛函理论(DFT)的第一性原理计算得到的SnS_xSe_2-x的拉曼仿真谱高度吻合,理论计算结果较好地诠释了实验拉曼光谱发生变化的原因。本研究提供了一种元素百分比可调的三元SnS_xSe_2-x单晶纳米片的可控制备方法,同时对锡二硫族化合物的明确、无损识别提供了方案。     

双激光脉冲打靶形成Gd等离子体的极紫外光谱辐射

高端芯片制造所需要的极紫外光刻技术位于我国当前面临35项"卡脖子"关键核心技术之首.高转换效率的极紫外光源是极紫外光刻系统的重要组成部分.本文通过采用双激光脉冲打靶技术实现较强的6.7 nm极紫外光输出.首先,理论计算Gd¹⁸⁺—Gd²⁷⁺离子最外层4d壳层的4p-4d和4d-4f能级之间跃迁、以及Gd¹⁴⁺—Gd¹⁷⁺离子最外层4f壳层的4d-4f能级之间跃迁对波长为6.7 nm附近极紫外光的贡献.其后开展实验研究,结果表明,随着双脉冲之间延时的逐渐增加,波长为6.7 nm附近的极紫外光辐射强度呈现先减弱、后增加、之后再减弱的变化趋势,在双脉冲延时为100 ns处产生的极紫外光辐射最强.并且,在延时为100 ns处产生的光谱效率最高,相比于单脉冲激光产生的光谱效率提升了33%.此外,发现双激光脉冲打靶技术可以有效地减弱等离子体的自吸收效应,获得的6.7 nm附近极紫外光谱宽度均小于单激光脉冲打靶的情形,且在脉冲延时为30 ns时刻所产生的光谱宽度最窄,约为单独主脉冲产生极紫外光谱宽度的1/3.同时...     

On Necessary Optimality Conditions with Higher-Order Complementarity Slackness for Set-Valued Optimization Problems

Set-Valued and Variational Analysis - We aim to establish Karush-Kuhn-Tucker multiplier rules involving higher-order complementarity slackness under Hölder metric subregularity. These rules...     

A general framework for describing photofission observables of actinides at an average excitation energy below 30 MeV

A reasonable prediction of photofission observables plays a paramount role in understanding the photofission process and guiding various photofission-induced applications, such as short-lived isotope production, nuclear waste disposal, and nuclear safeguards. However, the available experimental data for photofission observables are limited, and the existing models and programs have mainly been developed for neutron-induced fission processes. In this study, a general framework is proposed for characterizing the photofission observables of actinides, including the mass yield distributions (MYD) and isobaric charge distributions (ICD) of fission fragments and the multiplicity and energy distributions of prompt neutrons (n_p) and prompt γ rays (γ_p). The framework encompasses various systematic neutron models and empirical models considering the Bohr hypothesis and does not rely on the experimental data as input. These models are then validated individually against experimental data at an average excitation energy below 30 MeV, which shows the reliability and robustness of the general framework. Finally, we employ this framework to predict the characteristics of photofission fragments and the emissions of prompt particles for typical actinides including ²³²Th, ^{235, 238}U and ²⁴⁰Pu. It is found that the ²³⁸U(γ, f) reaction is more suitable for producing neutron-rich nuclei compared to the ²³²Th(γ, f) reaction. In addition, the average multiplicity number of both n_p and γ_p increases with the average excitation energy.     

Dynamic behavior and stability analysis of nonlinear modes in the fourth-order generalized Ginzburg–Landau model with near $$\mathcal{PT}$$ PT -symmetric potentials

Nonlinear Dynamics - Parametrically excited oscillators are used in several domains, in particular to improve the dynamical behaviour of systems like in the case of the parametric amplification or...     

Experimental study on the runaway behaviors of Panasonic 21,700 LiNi0.8Co0.15Al0.05O2 battery used in electric vehicle under thermal failure

Journal of Thermal Analysis and Calorimetry - Thermal runaway phenomena of the Panasonic 21,700 LiNi0.8Co0.15Al0.05O2 lithium-ion batteries with 100, 50 and 25% capacity were studied under thermal...     

Nonlinear compressed sensing-based adaptive modal shapes selection approach for efficient dynamic response analysis of flexible multibody system

Nonlinear Dynamics - The modal truncation is usually used in the dynamic response analysis of flexible multibody systems, in which, appropriate selection of modal shapes is very critical to achieve...     

Differential Entropy of Induced Random State Ensemble

International Journal of Theoretical Physics - In this paper, we will consider the exact calculation of differential entropy of induced random state ensemble by partial tracing a subsystem over...     

硅和锗纳米线的原子排布和电荷分布的密度泛函紧束缚方法研究

低维硅锗材料是制备纳米电子器件的重要候选材料，是研发高效率、低能耗和超高速新一代纳米电子器件的基础材料之一，有着潜在的应用价值。采用密度泛函紧束缚方法分别对厚度相同、宽度在0.272 nm~0.554 nm之间的硅纳米线和宽度在0.283 nm~0.567 nm之间的锗纳米线的原子排布和电荷分布进行了计算研究。硅、锗纳米线宽度的改变使原子排布，纳米线的原子间键长和键角发生明显改变。纳米线表层结构的改变对各层内的电荷分布产生重要影响。纳米线中各原子的电荷转移量与该原子在表层内的位置相关。纳米线的尺寸和表层内原子排列结构对体系的稳定性产生重要影响。     

A luminescent Zn(II)-Containing Complex: Selective Sensing of Cr(VI) Anion and Application Values on Tuberculosis Care Through Increasing the Antibacterial Response of Macrophages

Journal of Fluorescence - A new Zn(II)-bearing metal-organic framework (MOF), namely, {[Zn2(L)2(H2O)]·8H2O·DMF}n (1) has been generated via applying...