| SnSxSe2-x单晶纳米片的可控制备与表征 |
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| 引用本文： | 张国欣,宁博,赵杨,刘绍祥,石轩,赵洪泉.SnSxSe2-x单晶纳米片的可控制备与表征[J].人工晶体学报,2022,51(4):611-619. |
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| 作者姓名： | 张国欣 宁博 赵杨 刘绍祥 石轩 赵洪泉 |
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| 作者单位： | 1.中国科学院重庆绿色智能技术研究院,重庆 400714; 2.中国科学院大学重庆学院,重庆 400714; 3.重庆邮电大学光电工程学院,重庆 400065 |
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| 基金项目： | 国家自然科学基金(61775214);重庆市自然科学基金重点项目(cstc2019jcyj-zdxm0098);重庆市自然科学基金面上项目(cstc2019jcyj-msxmX0387);重庆英才项目(CQYC202002064);中科院青促会项目 |
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| 摘 要： | 锡二硫族化合物可以通过改变硫和硒的含量来连续调控三元合金材料的带隙、载流子浓度等物理化学性质,在电子和光电子器件应用上具有巨大的潜力。本文采用化学气相沉积(CVD)技术可控地制备了不同元素组分的SnSxSe2-x(x=0,0.2,0.5,0.8,1.0,1.2,1.5,1.8,2.0)单晶纳米片。采用扫描电子显微镜(SEM)、原子力显微镜(AFM)、能量色散X射线光谱(EDS)、透射电子显微镜(TEM)以及拉曼光谱等手段对SnSxSe2-x纳米片进行了综合表征。结果表明本方法成功实现了元素百分比可调的SnSxSe2-x单晶纳米片的可控制备。重点研究了依赖于元素百分比的SnSxSe2-x的拉曼特征谱,实验结果与基于密度泛函理论(DFT)的第一性原理计算得到的SnSxSe2-x的拉曼仿真谱高度吻合,理论计算结果较好地诠释了实验拉曼光谱发生变化的原因。本研究提供了一种元素百分比可调的三元SnSxSe2-x单晶纳米片的可控制备方法,同时对锡二硫族化合物的明确、无损识别提供了方案。
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| 关 键 词： | SnSxSe2-x 化学气相沉积 单晶 纳米片 拉曼光谱 第一性原理 密度泛函理论 三元合金 |
| 收稿时间： | 2021-12-16 |
Controllable Preparation and Characterization of SnSxSe2-x Single Crystal Nanosheets |
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| ZHANG Guoxin,NING Bo,ZHAO Yang,LIU Shaoxiang,SHI Xuan,ZHAO Hongquan.Controllable Preparation and Characterization of SnSxSe2-x Single Crystal Nanosheets[J].Journal of Synthetic Crystals,2022,51(4):611-619. |
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| Authors: | ZHANG Guoxin NING Bo ZHAO Yang LIU Shaoxiang SHI Xuan ZHAO Hongquan |
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| Affiliation: | 1. Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China; 2. Chongqing School, University of Chinese Academy of Sciences, Chongqing 400714, China; 3. College of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China |
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| Abstract: | The band gap and carrier concentration of ternary tin dichalcogenides can be continuously controlled by changing the sulfur and selenium contents, which has large application potential in electric and photoelectric devices. In this paper, SnSxSe2-x (x=0, 0.2, 0.5, 0.8, 1.0, 1.2, 1.5, 1.8, 2.0) single crystal nanosheets were controllably prepared by chemical vapor deposition (CVD) technique. The prepared SnSxSe2-x nanosheets were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray spectroscopy (EDS) and Raman spectroscopy. The results prove the controllable preparation of SnSxSe2-x nanosheets with adjustable elemental percentages in high monocrystalline quality. The elemental percentage dependence of the Raman spectroscopy from SnSxSe2-x nanosheets were especially studied, and the experimental results are well consistent to the simulation results by first-principles calculation based on the density functional theory. This study provides a reliable method for the preparation of ternary SnSxSe2-x single crystal nanosheets with adjustable elemental percentages. A definite and nondestructive method for the characterization of ternary tin dichalcogenides is also proposed. |
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| Keywords: | SnSxSe2-x CVD single crystal nanosheet Raman spectroscopy first principle DFT ternary alloy |
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