Local leakage current behaviours of BiFeO3 films

The leakage current behaviours of polycrystalline BiFeO₃ thin films are investigated by using both conductive atomic force microscopy and current-voltage characteristic measurements. The local charge transport pathways are found to be located mainly at the grain boundaries of the films. The leakage current density can be tuned by changing the post-annealing temperature, the annealing time, the bias voltage and the light illumination, which can be used to improve the performances of the ferroelectric devices based on the BiFeO₃ films. A possible leakage mechanism is proposed to interpret the charge transports in the polycrystalline BiFeO₃ films.     

The effects of ^60Co γ-ray irradiation on the DC characteristics of enhancement-mode A1GaN/GaN high-electron-mobility transistors

The effects of ^60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electron- mobility transistors （E-mode HEMTs） are investigated. The results show that having been irradiated by^60Co γ-rays at a dose of 3 Mrad （Si）, the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode A1GaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated.     

The effects of ⁶⁰Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors

The effects of 60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electron-mobility transistors (E-mode HEMTs) are investigated. The results show that having been irradiated by 60Co γ-rays at a dose of 3 Mrad (Si), the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode AlGaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated.     

三维多孔复合碳层对电极的制备及其光伏性能研究

基于TiO_2光阳极、Pt对电极的染料敏化太阳能电池(DSSC)因其优异的光电转换特性受到了广泛的关注,然而Pt昂贵的价格制约了其发展与应用.针对这一问题,本文设计、制备了一种由相对致密且高导电的石墨膜(PC层,底层)及多孔碳纳米颗粒膜(CC层,顶层)构成的低成本、高性能三维多孔复合碳层对电极.基于该CC/PC对电极的DSSC具有优异的光伏性能:在1.5标准太阳光照射下,其填充因子高达65.28%(较Pt对电极高4.1%)、光电转换效率高达5.9%(为Pt对电极的94.2%). CC/PC对电极的优异光伏性能主要归因于其独特的三维多孔导电结构,该结构有极高的比表面积和丰富的催化反应活性位,有利于电子的快速传输及离子的快速转移,在这些因素的协同作用下,其光电转换性能大大改善.     

Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC

Photoelectrical response characteristics of epitaxial graphene (EG) films on Si- and C-terminated 6H-SiC, and transferred chemical vapor deposition (CVD) graphene films on Si-terminated 6H-SiC have been investigated. The results show that upon illumination by a xenon lamp, the photocurrent of EG grown on Si-terminated SiC significantly increases by 147.6%, while the photocurrents of EG grown on C-terminated SiC, and transferred CVD graphene on Si-terminated SiC slightly decrease by 0.5% and 2.7%, respectively. The interfacial buffer layer between EG and Si-terminated 6H-SiC is responsible for the significant photoelectrical response of EG. Its strong photoelectrical response makes it promising for optoelectronic applications.     

Large magnetic entropy change near room temperature in the LaFe11.5Si1.5H1.3 interstitial compound

The LaFe_11.5Si_1.5H_1.3 interstitial compound has been prepared. Its Curie temperature T_C (288 K) has been adjusted to around room temperature, and the maximal magnetic entropy change (|ΔS|～17.0 J·kg^-1·K^-1 at T_C) is larger than that of Gd (|ΔS|～9.8 J·kg^-1·K^-1 at T_C=293 K) by ～73.5% under a magnetic change from 0 to 5 T. The origin of the large magnetic entropy change is attributed to the first-order field-induced itinerant-electron metamagnetic transition. Moreover, the magnetic hysteresis of LaFe_11.5Si_1.5H_1.3 under the increase and decrease of the field is very small, which is favourable to magnetic refrigeration application. The present study suggests that the LaFe_11.5Si_1.5H_1.3 compound is a promising candidate as a room-temperature magnetic refrigerant.     

LaFe11.6Si1.4C0.5间隙化合物的磁性、磁相变和磁熵变

使用了约80％的廉价铁原料，制备了LaFe11．6Sil．4C0．5间隙化合物。研究表明：该间隙化合物仍保持了LaFe11．6Sil．4的NaZnl3立方晶体结构，间隙C原子的引入导致晶格膨胀了约0．35％，居里点提高了约50K；同时，仍然保持大的磁熵变，在0-2T磁场变化下，磁熵变达到Gd的2倍以上，大磁熵变源于磁场诱发的巡游电子变磁相变。该间隙化合物具有大磁熵变。     

Magnetism and magnetic entropy change in LaFe11Al2Cx compounds around room temperature

Magnetism and magnetic entropy changes in LaFe11A12Cx(x=0.0, 0.2 and 0.5) compounds have been investigated.The Curie temperature TC is conveniently controlled from 200K to room temperature by varying the carbon concentration.Large magnetic entropy change is obtained over a wide temperature range due to the high magnetization and the drastic decrease in the magnetization around TC.The large magnetic entropy change in wide temperature range,low cost and the convenience of controlling TC suggest that the LaFe11Al2Cx compounds are promising candidates for magnetic refrigerants in the corresponding temperature range.     

Change in the magnetic ground state of LaFe11.4Al1.6 compound by the substitution of Mn for Fe

The structure and magnetic properties of La(Fe_{1-x}Mn_x)_{11.4}Al_{1.6} (0≤x≤0.25)compounds have been studied. The NaZn_{13}-type structure is preserved and the lattice parameter increases linearly with increasing the Mn concentration. The magnetic ground state changes from the antiferromagnetic to the spin-glass or the cluster-glass state by the substitution of Mn for Fe. Furthermore, a field-induced transition from cluster glass to ferromagnet is found for the samples with x=0.05 and 0.10.     

Large magnetic entropy change and magnetic properties in La （Fel－xMnx）ll.TSil.3Hy compounds

Magnetic properties and magnetic entropy change in La(Fe_{1-x}Mn_x)_{11.7}Si_{1.3}H_y compounds have been investigated. A significant increase of the Curie temperature T_C and a small increase of the saturation magnetizations μ_S have been observed after the introduction of interstitial H, which caused a slight volume expansion. The first-order field-induced itinerant-electron metamagnetic (IEM) transition remains and brings about a large magnetic entropy change around room temperatures for the compounds. The maximal magnetic entropy change is about 23.4, 17.7 and 15.9J/kg·K under a magnetic field change from 0 to 5T for x=0.01, 0.02 and 0.03, respectively. Therefore, the compounds appear to be potential candidates for magnetic refrigerants around room temperatures.