Local leakage current behaviours of BiFeO3 films

The leakage current behaviours of polycrystalline BiFeO₃ thin films are investigated by using both conductive atomic force microscopy and current-voltage characteristic measurements. The local charge transport pathways are found to be located mainly at the grain boundaries of the films. The leakage current density can be tuned by changing the post-annealing temperature, the annealing time, the bias voltage and the light illumination, which can be used to improve the performances of the ferroelectric devices based on the BiFeO₃ films. A possible leakage mechanism is proposed to interpret the charge transports in the polycrystalline BiFeO₃ films.     

Giant low-frequency magnetoelectric torque (MET) effect in polyvinylidene-fluoride (PVDF)-based MET device

A polyvinylidene-fluoride(PVDF)-based magnetoelectric torque(MET) device is designed with elastic layer sandwiched by PVDF layers, and low-frequency MET effect is carefully studied. It is found that elastic modulus and thickness of the elastic layer have great influences on magnetoelectric(ME) voltage coefficient(α_(ME)) and working range of frequency in PVDF-based MET device. The decrease of the modulus and thickness can help increase the α ME. However,it can also reduce the working range in the low frequency. By optimizing the parameters, the giant α_(ME) of 320 V/cm·Oe(1 Oe = 79.5775 A·m~(-1) at low frequency(1 Hz) can be obtained. The present results may help design PVDF-based MET low-frequency magnetic sensor with improved magnetic sensitivity in a relative large frequency range.     

Enhanced energy storage behaviors in free-standing antiferroelectric Pb(Zr_(0.95)Ti_(0.05))O_3 thin membranes

Free-standing antiferroelectric Pb(Zr_(0.95)Ti_(0.05)O_3(PZT(95/5)) thin film is fabricated on 200-nm-thick Pt foil by using pulsed laser deposition.X-ray diffraction patterns indicate that free-standing PZT(95/5) film possesses an α-axis preferred orientation.The critical electric field for the 300-nm-thick free-standing PZT(95/5) film transiting from antiferroelectric to ferroelectric phases is increased to 770 kV/cm,but its saturation polarization remains almost unchanged as compared with that of the substrate-clamped PZT(95/5) film.The energy storage density and energy efficiency of the substrate-clamped PZT(95/5) film are 6.49 J/cm~3 and 54.5%,respectively.In contrast,after removing the substrate,the energy storage density and energy efficiency of the free-standing PZT(95/5) film are enhanced up to 17.45 J/cm~3 and 67.9%,respectively.     

具有不同交换偏置方向的外延FeGa/IrMn双层膜的磁各向异性与磁化翻转

采用磁控溅射方法在MgO(001)单晶衬底上制备了交换偏置分别沿着FeGa [100]和[110]方向的FeGa/IrMn外延交换偏置双层膜,研究了交换偏置取向对磁化翻转过程与磁化翻转场的影响.铁磁共振场的角度依赖关系的测量与拟合,表明样品存在不同取向的四重对称磁晶各向异性、单向交换磁各向异性和单轴磁各向异性的叠加.矢量磁光克尔效应测量表明交换偏置沿着[100]方向的样品在不同磁场方向下表现矩形、非对称和单边两步磁滞回线;交换偏置沿着[110]方向的样品在不同磁场方向下表现单边两步和双边两步磁滞回线.考虑不同交换偏置方向的畴壁形核和位移模型,能够很好地解释磁化翻转路径随磁场方向的变化规律和拟合磁化翻转场的角度依赖关系,表明交换偏置方向的改变使得畴壁形核能发生显著变化.     

Magnetization reversal of Fe ultrathin film on Cu(100)

The magnetization reversal of Fe/Cu(100) ultrathin films grown at room temperature is investigated by using an in situ magneto-optical Kerr effect polarimeter with a magnet that can rotate in a plane of incidence. There occur spin reorientation transitions from out-of-plane to in-plane magnetizations in 8 and 12 monolayers (ML) thick iron films. The coercive fields are observed to be proportional to the reciprocal of the cosine with respect to the easy axis, suggesting that the domain-wall displacement plays a main role in the magnetization reversal process.     

Growth of Mn5Ge3 ultrathin film on Ge（111）

The growth of Mn5Ge3 ultrathin films with different thicknesses, prepared by solid phase epitaxy, is studied. The results of scanning tunnelling microscopy and low energy electron diffraction studies show that the film can be formed and it is terminated with a （√3 × √3） R30° surface reconstruction when the thickness of Mn exceeds 3 monolayers. The magnetic properties show that the Curie temperature is about 300 K and the T^2-dependent behaviour is observed to remain up to 220 K.     

Exchange-coupling-induced fourfold magnetic anisotropy in CoFeB/FeRh bilayer grown on SrTiO3(001)

Exchange coupling across the interface between a ferromagnetic (FM) layer and an antiferromagnetic (AFM) or another FM layer may induce a unidirectional magnetic anisotropy and/or a uniaxial magnetic anisotropy, which has been extensively studied due to the important application in magnetic materials and devices. In this work, we observed a fourfold magnetic anisotropy in amorphous CoFeB layer when exchange coupling to an adjacent FeRh layer which is epitaxially grown on an SrTiO₃(001) substrate. As the temperature rises from 300 K to 400 K, FeRh film undergoes a phase transition from AFM to FM phase, the induced fourfold magnetic anisotropy in the CoFeB layer switches the orientation from the FeRh$\langle 110\rangle $ to FeRh$\langle 100\rangle $ directions and the strength is obviously reduced. In addition, the effective magnetic damping as well as the two-magnon scattering of the CoFeB/FeRh bilayer also remarkably increase with the occurrence of magnetic phase transition of FeRh. No exchange bias is observed in the bilayer even when FeRh is in the nominal AFM state, which is probably because the residual FM FeRh moments located at the interface can well separate the exchange coupling between the below pinned FeRh moments and the CoFeB moments.     

Fabrication,properties, and applications of flexible magnetic films

Flexible magnetic devices, i.e., magnetic devices fabricated on flexible substrates, are very attractive in applications such as detection of magnetic field in an arbitrary surface, non-contact actuators, and microwave devices, due to their stretchable, biocompatible, light-weight, portable, and low cost properties. Flexible magnetic films are essential for the realization of various functionalities of flexible magnetic devices. To give a comprehensive understanding for flexible magnetic films and related devices, recent advances in the study of flexible magnetic films are reviewed, including fabrication methods, magnetic and transport properties of flexible magnetic films, and their applications in magnetic sensors, actuators, and microwave devices. Our aim is to foster a comprehensive understanding of these films and devices. Three typical methods have been introduced to prepare the flexible magnetic films, by deposition of magnetic films on flexible substrates, by a transfer and bonding approach or by including and then removing sacrificial layers. Stretching or bending the magnetic films is a good way to apply mechanical strain to them, so that magnetic anisotropy, exchange bias, coercivity, and magnetoresistance can be effectively manipulated. Finally, a series of examples is shown to demonstrate the great potential of flexible magnetic films for future applications.     

Effect of thermal deformation on giant magnetoresistance of flexible spin valves grown on polyvinylidene fluoride membranes

We fabricated flexible spin valves on polyvinylidene fluoride(PVDF) membranes and investigated the influence of thermal deformation of substrates on the giant magnetoresistance(GMR) behaviors. The large magnetostrictive Fe_(81)Ga_(19)(Fe Ga) alloy and the low magnetostrictive Fe_(19)Ni_(81)(Fe Ni) alloy were selected as the free and pinned ferromagnetic layers.In addition, the exchange bias(EB) of the pinned layer was set along the different thermal deformation axes α_(31) or α_(32) of PVDF. The GMR ratio of the reference spin valves grown on Si intrinsically increases with lowering temperature due to an enhancement of spontaneous magnetization. For flexible spin valves, when decreasing temperature, the anisotropic thermal deformation of PVDF produces a uniaxial anisotropy along the α_(32) direction, which changes the distribution of magnetic domains. As a result, the GMR ratio at low temperature for spin valves with EB α_(32)becomes close to that on Si, but for spin valves with EB α_(31)is far away from that on Si. This thermal effect on GMR behaviors is more significant when using magnetostrictive Fe Ga as the free layer.     

近代物理实验课程思政教学的一些探索

在华东师范大学卓越育人发展纲要引领下,近代物理实验课程融入思政元素,在实验教学中探索与推进课程思政建设.介绍物理实验课程思政建设的基础与教学要点,列举获取思政元素尤其是校本思政元素的一些通用方法,并对思政教学进行反思与探讨.基于课程思政,设计创新型教学活动,充分调动学生积极性,发挥近代物理实验课程的卓越育人功能.