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通过X射线衍射、磁测量及正电子湮没谱等手段研究了Tb2AlFe16-xMnx(x=1—8)化合物的结构和磁性.X射线衍射研究结果表明Tb2AlFe16-xMnx化合物具有六角相的Th2Ni17型结构.室温下的正电子湮没实验研究表明,Mn对Fe的替代导致化合物中的铁磁相互作用减弱,并且化合物中存在着较强烈的磁弹耦合效应.磁测量研究结果表明,Mn的替代导致Tb2AlFe16-xMnx化合物的居里温度及自发磁化强度急剧下降.
关键词:
2AlFe16-xMnx化合物')" href="#">Tb2AlFe16-xMnx化合物
磁弹耦合效应
居里温度 相似文献
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采用分光光度计测定了60keV质子辐照后铝膜反射镜反射光谱的变化规律.用慢正电子湮没等分析技术研究了辐照损伤的微观机制.结果表明,当质子辐照主要作用于反射镜铝膜层中时反射镜在200—800nm波长范围内反射率随辐照剂量增加而下降.入射质子可对铝膜中的缺陷产生填充作用,减小铝膜中电子密度,增加弱束缚电子带间跃迁.紫外至可见光能量较高的波段可引起带间激发跃迁,使相应的谱段反射率下降,导致反射镜光学性能的退化.
关键词:
反射镜
光学性能
质子辐照
慢正电子湮没 相似文献
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Annealing Behaviour of Helium Bubbles in Titanium Films by Thermal Desorption Spectroscopy and Positron Beam Analysis 总被引:1,自引:0,他引:1 下载免费PDF全文
Helium-containing Ti Glms are prepared using magnetron sputtering in the helium-argon atmosphere. Isochronal annealing at different temperatures for an hour is employed to reveal the behaviour of helium bubble growth. Ion beam analysis is used to measure the retained helium content. Helium can release largely when annealing above 970K. A thermal helium desorption spectroscopy system is constructed for assessment of the evolution of helium bubbles in the annealed samples by linear heating (OAK/s) from room temperature to 1500K. Also, Doppler broadening measurements of positron annihilation radiation spectrum are performed by using changeable energy positron beam. Bubble coarsening evolves gradually below 680K, migration and coalescence of small bubbles dominates in the range of 68-970 K, and the Ostwald ripening mechanism enlarges the bubbles with a massive release above 970K. 相似文献
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In the present work, a Cz-Silicon wafer is implanted with helium ions to produce a buried porous layer, and then thermally annealed in a dry oxygen atmosphere to make oxygen transport into the cavities. The formation of the buried oxide layer in the case of internal oxidation (ITOX) of the buried porous layer of cavities in the silicon sample is studied by positron beam annihilation (PBA). The cavities are formed by 15 keV He implantation at a fluence of 2×10^16 cm^-2 and followed by thermal annealing at 673 K for 30 min in vacuum. The internal oxidation is carried out at temperatures ranging from 1073 to 1473 K for 2 h in a dry oxygen atmosphere. The layered structures evolved in the silicon are detected by using the PBA and the thicknesses of their layers and nature are also investigated. It is found that rather high temperatures must be chosen to establish a sufficient flux of oxygen into the cavity layer. On the other hand high temperatures lead to coarsening the cavities and removing the cavity layer finally. 相似文献
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Evolution of Structural Defects in SiOx Films Fabricated by Electron Cyclotron Resonance Plasma Chemical Vapour Deposition upon Annealing Treatment 下载免费PDF全文
We study the structural defects in the SiO, film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples. [-SiO3]^2- defects are the luminescence centres of the ultraviolet photoluminescence (PL) from the Fourier transform infrared spectroscopy and PL measurements. [-SiO3]^2- is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000℃ annealing, [-SiO3]^2- defects still exist in the films. 相似文献
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Defects in Si-Rich SiO2 Films Prepared by Radio-Frequency Magnetron Co-sputtering Using Variable Energy Positron Annihilation Spectroscopy 下载免费PDF全文
Si-rich SiO2 films prepared by rf magnetron co-sputtering method are studied by slow positron beams. The nega- tively charge point defects (probably Pb centres or peroxy radicals) at the silicon nanocluster (nc-Si)/SiO2 interface are observed by Doppler broadening spectra. Coincidence Doppler-broadening spectra show that positrons have a higher annihilation probability with core electrons nearby oxygen atoms than silicon atoms. The formation of N-related bonds may be the reason for the prevention of the migration reaction of Si and 0 atoms, hence nc-Si formation is inhibited by annealing in nitrogen compared to in vacuum. 相似文献
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将用溶胶-凝胶法得到的La0.67Ca0.33MnO3(LCMO)微粉与ZrO2的颗粒进行复合,制备了(LCMO)x/(ZrO2)1-x渗流复合体系.当LCMO的体积分数为40%时,复合体系达到渗流阈值,此时材料在低温下的磁电阻得到显著增强.77 K时在10 mT的磁场下,(LCMO)0.4/(ZrO2)0.6的磁电阻比为7.8%,相对于LCMO增加了712%.低场磁电阻(LFMR)的增强是由于载流子在二者界面处发生的自旋相关隧穿效应.由于界面反应,不可避免地产生了Zr离子对Mn离子的B位替代,从而引起材料磁性M和居里温度Tc的下降.在x<60%时,Tc保持在220 K附近基本不变,说明该B位替代是有限的. 相似文献
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Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 下载免费PDF全文
The leakage current of GaN Schottky barrier ultraviolet
photodetectors is investigated. It is found that the photodetectors
adopting undoped GaN instead of lightly Si-doped GaN as an active
layer show a much lower leakage current even when they have a higher
dislocation density. It is also found that the density of Ga
vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga
vacancies may enhance tunneling and reduce effective Schottky
barrier height, leading to an increase of leakage current. It
suggests that when undoped GaN is used as the active layer, it is
necessary to reduce the leakage current of GaN Schottky barrier
ultraviolet photodetector. 相似文献
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