低温硫化制备ZnS薄膜的物理性质研究

采用磁控溅射方法先在玻璃衬底上室温下沉积Zn金属薄膜，接着先后在200和400 ℃温度下的硫蒸气和氩气流中进行退火，生长出 ZnS 薄膜。薄膜样品的微观结构、物相结构、表面形貌和光学性质分别采用正电子湮没技术 (PAT)、X射线衍射仪 (XRD)、扫描电子显微镜 (SEM)和紫外-可见分光光度计进行表征。该ZnS薄膜在可见光范围具有约80%的高透光率，随着硫化时间的增加，其带隙由3.55 增加到3.57 eV，S/Zn原子比从0.54上升至0.89，薄膜质量明显得到改善，相对于以前报道的真空封装硫化所制备的ZnS薄膜，硫过量问题得到了较好解决。此外，慢正电子湮没多普勒展宽谱对硫化前后薄膜样品中膜层结构缺陷研究表明，硫化后薄膜的S参数明显增大，生成的ZnS 薄膜结构缺陷浓度高于Zn薄膜。     

Performance of the plugged-in 22Na based slow positron beam facility

The Beijing intense slow positron beam facility is based on the 1.3GeV linac of Beijing Electron-Positron Collider (BEPC) aiming to produce mono-energetic intense slow positron beam for material science investigation. The plugged-in ²²Na based slow positron beam section has been newly constructed to supply continuous beam time for the debugging of positron annihilation measurement stations and improve the Beijing intense slow positron beam time using efficiency. Performance testing result of the plugged-in ²²Na based slow positron beam facility are reviewed in this paper, with the measurement of the beam transport efficiency, the view of beam spot, the adjustment of beam position, the measurement of beam intensity and energy spread etc. included.     

Physical design of positronium time of flight spectroscopy apparatus

Positronium time of flight spectroscopy（Ps-TOF）is an effective technique for porous material research.It has advantages over other techniques for analyzing the porosity and pore tortuosity of materials.This paper describes a design for Ps-TOF apparatus based on the Beijing intense slow positron beam,supplying a new material characterization technique.In order to improve the time resolution and increase the count rate of the apparatus,the detector system is optimized.For 3 eV o-Ps,the time broadening is 7.66 ns and the count rate is 3 cps after correction.     

北京慢正电子强束流磁场输运系统设计研究

针对基于北京正负电子对撞机的慢正电子强束流系统对输运磁场的设计要求,本文对不同规格的磁场输运线圈模型、长螺线管端口处磁场的补偿以及地磁场和弯管道对正电子束流的影响等进行了计算,提出适用于本系统传输慢正电子束流的输运磁场分布、补偿线圈、调整线圈的加工参数,计算表明,系统的总体磁场不均匀度小于10髎.实际运行束流测试表明,所设计的磁场系统能够很好的将慢正电子束流输运到约16m远的样品测量室,慢正电子束斑尺寸基本没有变化,满足慢正电子束流系统的设计要求.     

一种新的灵敏核探针——慢正电子束流装置

简要介绍了广泛应用于表面科学的灵敏核探针——慢正电子束设备的原理、构造和应用 ,阐述了北京慢正电子束流装置的设计原理和性能 ,讨论了北京慢正电子束流装置今后的研究前景. A novel and compact slow positron beam line——Beijing Slow Positron Beam Line was described. The basic physical concepts of the slow positron beam and its applications were reviewed. Recent experimental results showed the converting effcicency for the total positrons from the radioisotope to slow positrons was 8×10 -5 and the moderation efficiency was 1.7×10 -4 . The future development of Beijing Intense Slow Positron Beam, based on the BEPC LINAC, was also briefly discussed.     

Evolution of Structural Defects in SiOx Films Fabricated by Electron Cyclotron Resonance Plasma Chemical Vapour Deposition upon Annealing Treatment

We study the structural defects in the SiO, film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples. [-SiO3]^2- defects are the luminescence centres of the ultraviolet photoluminescence （PL） from the Fourier transform infrared spectroscopy and PL measurements. [-SiO3]^2- is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000℃ annealing, [-SiO3]^2- defects still exist in the films.     

Positronium annihilation in silica aerogel studied by a positron age-momentum correlation technique

A high-performance positron age-momentum correlation (AMOC) spectrometer was newly developed. The counting rate is increased up to 200 cps much larger than the value 20~cps reported by other international groups. And at the same time, the time resolution still keeps at the international level of 220 ps. Furthermore, positronium (Ps) annihilation in silica aerogel was investigated by AMOC, which indicates: (1) Ps annihilation between the grains dominantly undergoes pick-off process and spin conversion from o-Ps to p-Ps; (2) Annealing below 400 ℃ changes the grain surface conditions, i. e. the desorption of hydrogen and the decrease of the defect centers concentration.     

Identification of pore size in porous SiO2 thin film by positron annihilation

Positron annihilation lifetime and Doppler broadening of annihilation line techniques have been used to obtain information about the small pore structure and size of porous SiO2 thin film produced by sputtered Al-Si thin film and etched Al-Si thin film. The film is prepared by an Al/Si 75：25 at.-% （A175Si25） target with the radiofrequency （RF） power of 66 W at room temperature. A 5 wt.-% phosphoric acid solution is used to etch the Al cylinders. All the A1 cylinders dissolved in the solution after 15 h at room temperature, and the sample is subsequently rinsed in pure water. In this way, the porous SiO2 on the Si substrate is produced. From our results, the values of all lifetime components in the spectra of Al-Si thin film are less than 1 ns, but the value of one of the lifetime components in the spectra of porous SiO2 thin film is τ = 7.80 ns. With these values of lifetime, RTE （Rectangular Pore Extension） model has been used to analyze the pore size.     

锆离子注入锆-4合金缺陷的慢正电子研究

采用慢正电子束多普勒展宽谱研究了Zr离子注入Zr-4合金产生的缺陷及其退火回复行为，发现经过大于离子注入剂量为1×10¹⁶cm^-2的样品所产生的缺陷在注入过程中已经回复，而对剂量为1×10¹⁵cm^-2样品做300℃退火处理，其缺陷基本回复，得出合金缺陷回复能较低的结论. 考虑到材料的缺陷含量越高，其抗腐蚀性能越差，在辐照环境下通过给材料保持一定温度，即可使其缺陷得到较好回复，从而提高材料的抗腐蚀性能.     

慢正电子束流技术在金属/合金微观缺陷研究中的应用

正电子湮没谱学技术是研究材料微观结构非常有效的一种核谱学分析方法, 主要用于获取材料内部微观结构的分布信息, 特别是微观缺陷结构及其特性等传统表征方法难以获取的微观结构信息. 近年来, 在慢正电子束流技术快速发展的基础上, 正电子湮没谱学技术在薄膜材料表面和界面微观结构的研究中得到了广泛应用. 特别是该技术对空位型缺陷的高灵敏表征能力, 使其在金属/合金材料表面微观缺陷的形成机理、缺陷结构特性及其演化行为等研究方面具有独特的优势. 针对材料内部微观缺陷的形成、演化机理以及缺陷特性的研究, 如缺陷的微观结构、化学环境、电子密度和动量分布等, 正电子湮没谱学测量方法和表征分析技术已经发展成熟. 而能量连续可调的低能正电子束流, 进一步实现了薄膜材料表面微观结构深度分布信息的实验表征. 本文综述了慢正电子束流技术应用研究的最新进展, 主要围绕北京慢正电子束流装置在金属/合金材料微观缺陷的研究中对微观缺陷特性的表征和表面微观缺陷演化行为的应用研究成果展开论述.