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Common Features in Electronic Structure of the Oxypnictide Superconductors from Photoemission Spectroscopy 下载免费PDF全文
贾小文 ;刘海云 ;张文涛 ;赵林 ;孟建桥 ;刘国东 ;董晓莉 ;吴刚 ;刘荣华 ;陈仙辉 ;任治安 ;衣纬 ;车广灿 ;陈根富 ;王楠林 ;王桂玲 ;周永 ;朱镛 ;王晓阳 ;赵忠贤 ;许祖彦 ;陈创天 ;周兴江 《中国物理快报》2008,25(10):3765-3768
High resolution photoemission measurements are carried out on non-superconducting LaFeAsO parent com- pound and various superconducting RFeAs(O1-ZFx) (R=La, Ce and Pr) compounds. It is found that the parent LaFeAsO compound shows a metallic character. By extensive measurements, several common features are identified in the electronic structure of these Fe-based compounds: (1) 0.2 eV feature in the valence band, (2) a universal 13-16 meV feature, (3) near EF spectral weight suppression with decreasing temperature. These uni- versal features can provide important information about band structure, superconducting gap and pseudogap in these Fe-based materials. 相似文献
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The conversion efficiency on the sixth harmonic of 1064 nm in KBe2BO3F2 (KBBF) at different gas pressures in two kinds of gases, helium and nitrogen, is measured and compared. In the both gases, maximum conversion efficiency on the sixth harmonic of 1064 nm in high vacuum is nearly 10% of 355 nm, which is almost four times higher than that in low vacuum. The maximum average output power at 177.3 nm is 670 ttW with the repetition rate of 10 Hz and the duration of 20 ps in high vacuum. It indicates that the sixth harmonic generation in high vacuum is more preferable than that in low vacuum. 相似文献
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LBO晶体超光滑表面抛光机理 总被引:1,自引:0,他引:1
胶体SiO2抛光LBO晶体获得无损伤的超光滑表面,结合前人对抛光机理的认识,探讨了超光滑表面抛光的材料去除机理,分析了化学机械抛光中的原子级材料去除机理.在此基础上,对胶体SiO2抛光LBO晶体表面材料去除机理和超光滑表面的形成进行了详细的描述,研究抛光液的pH值与材料去除率和表面粗糙度的关系.LBO晶体超光滑表面抛光的材料去除机理是抛光液与晶体表面的活泼原子层发生化学反应形成过渡的软质层,软质层在磨料和抛光盘的作用下很容易被无损伤的去除.酸性条件下,随抛光液pH值的减小抛光材料的去除率增大;抛光液pH值为4时,获得最好的表面粗糙度. 相似文献
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INFLUENCE OF γ-RADIATION ON THE DIELECTRIC CHARACTERISTICS IN Rb2ZnCl4 SINGLE CRYSTALS AT INCOMMENSURATE-COMMENSURATE PHASE TRANSITION 下载免费PDF全文
In this paper the influence of γ-radiation on the dielectric constants of Rb2ZnCl4 crystal at incommensurate-commensurate phase transition (hereafter abbreviated as INC-C transition) are studied. The thermal hysteresis occurs upon both cooling and heating runs, irrespective of whether the samples have been treated with γ-radiation or not. For the γ-irradiated sample, its transition point, Tc, between the INC and C phases is not changed, but the peak value of the dielectric constant at Tc increases abruptly, compared with that before γ-irradiation, When this sample is annealed at 40℃, the peak value restores to the incipient value for the sample free from γ-irradiation. The origin of the phenomenon of the thermal hysteresis of the dielectric constant may be due to the pinning effect of dejects or impurities in the samples. 相似文献
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