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SiO2内保护层对LiB3O5晶体倍频增透膜损伤阈值的影响
引用本文:于爱芳,范飞镝,刘中星,朱镛,陈创天.SiO2内保护层对LiB3O5晶体倍频增透膜损伤阈值的影响[J].强激光与粒子束,2007,19(4):603-606.
作者姓名:于爱芳  范飞镝  刘中星  朱镛  陈创天
作者单位:1. 中国科学院 理化技术研究所 人工晶体研究与发展中心, 北京 100080; 2. 中国科学院 研究生院, 北京 100039
基金项目:国家高技术研究发展计划(863计划)
摘    要: 利用离子辅助电子束沉积方法在LiB3O5基底上镀制了不加SiO2内保护层和加SiO2内保护层的倍频增透膜,测量了两类薄膜在波长1 064 nm多脉冲辐照下的激光损伤阈值,获得了两种不同的损伤形貌,并对损伤原因作了初步探讨。实验结果表明:保护层的加入把由基底膜层界面缺陷吸收所决定的阈值改变到由HfO2膜层内缺陷吸收所决定的阈值,显著提高了倍频增透膜的抗激光损伤能力。

关 键 词:LiB3O5  SiO2内保护层  倍频增透膜  激光损伤阈值  损伤形貌
文章编号:1001-4322(2007)04-0603-04
收稿时间:2006/12/12
修稿时间:2006-12-12

Effect of SiO2 barrier layer on laser induced damage threshold of second harmonic antireflection coatings on LiB3O5 crystal
YU Ai-fang,FAN Fei-di,LIU Zhong-xing,ZHU Yong,CHEN Chuang-tian.Effect of SiO2 barrier layer on laser induced damage threshold of second harmonic antireflection coatings on LiB3O5 crystal[J].High Power Laser and Particle Beams,2007,19(4):603-606.
Authors:YU Ai-fang  FAN Fei-di  LIU Zhong-xing  ZHU Yong  CHEN Chuang-tian
Institution:1. Beijing Center for Crystal Research and Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100080, China;2. Graduate School of Chinese Academy of Sciences, Beijing 100039, China
Abstract:Two different kinds of second harmonic antireflection(AR) coatings,with and without SiO2 barrier layer were prepared with ion assisted deposition on LiB3O5 crystal.Laser induced damage threshold(LIDT) by multiple-shot irradiation at 1 064 nm was studied and two typical damage morphologies were observed by SEM.The AR coatings with SiO2 barrier layer have an excellent LIDT,which is about 40% higher than that of coatings without barrier layer.The mechanism of LIDT enhancement by adding SiO2 barrier layer is also discussed.
Keywords:LiB3O5
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