SiO2内保护层对LiB3O5晶体倍频增透膜损伤阈值的影响

 利用离子辅助电子束沉积方法在LiB₃O₅基底上镀制了不加SiO₂内保护层和加SiO₂内保护层的倍频增透膜，测量了两类薄膜在波长1 064 nm多脉冲辐照下的激光损伤阈值，获得了两种不同的损伤形貌，并对损伤原因作了初步探讨。实验结果表明：保护层的加入把由基底膜层界面缺陷吸收所决定的阈值改变到由HfO₂膜层内缺陷吸收所决定的阈值，显著提高了倍频增透膜的抗激光损伤能力。     

LiB3O5晶体946nm,473nm倍频增透膜的研制

采用离子辅助沉积技术在LiB3O5晶体上制备了946nm,473nm倍频增透膜,并测量了薄膜的性质.测试结果表明, 该增透膜具有较低的剩余反射、高的环境稳定性和良好的附着力.进一步测量了薄膜在波长1064nm多脉冲辐照下的激光损伤阈值,获得了两种不同的损伤形貌,并对损伤原因作了初步的探讨.此工艺下镀制的LiB3O5晶体用于瓦级全固态蓝光激光器,获得了3.8W波长为473nm的连续蓝光输出.     

热声驱动摩擦纳米发电机研究

热声发动机作为一种新型的外燃式热机,具有可靠性高、使用寿命长、环境友好等优点,在热声发电、热驱动制冷等领域具有重要应用前景。本文结合热声技术和摩擦纳米发电技术的特点,首次提出了"热声驱动摩擦纳米发电机"这一热-声-电换能新流程。理论计算了驻波热声发动机和接触分离式摩擦纳米发电机采用末端耦合结构时的换能特性,并开展了系统实验研究。实验中,热声驱动摩擦纳米发电机获得了最高10 V的开路电压输出;在外接电阻为400 MΩ时,最高输出功率为0.008μW,验证了"热声驱动摩擦纳米发电机"这一概念的可行性。     

Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric

Carrier mobifity enhancement from 0.09 to 0.59cm2/Vs is achieved for pentacene-based thin-film transistors （TFTs） by modifying the Hf02 gate dielectric with a polystyrene （PS） thin film. The improvement of the transistor＇s performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HI02 surface, the Stranski- Krastanov growth mode on the smooth and nonpolar PS/HfO2 surface is believed to be the origin of the excellent carrier mobility of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski-Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility.