Synthesis,Structure and Magnetic Property of One Ni~Ⅱ Based Coordination Polymer

One new coordination polymer, [Ni(m-bix)(m-BDC)](1, m-bix = 1,3-bis(imidazol-1-ylmethyl)benzene, m-BDC = 1,3-benzenedicarboxylic acids), has been hydrothermally synthesized and structurally characterized by elemental analysis, IR, TGA and X-ray single-crystal diffraction. The green block crystal of complex 1(C22H18N4Ni O4) belongs to monoclinic system, space group P21/c with a = 10.0418(3), b = 23.8651(6), c = 8.7872(2) A, β = 112.333(3)o, V = 1947.88(9)A3, Z = 4, Dc = 1.572 g/cm3, Mr = 461.11, F(000) = 952, R = 0.0335 and w R = 0.0683 for 2827 observed reflections(I 2σ(I)). Complex 1 exhibits a novel 6-connected 3D sxd type topological framework. The magnetic characterization of complex 1 shows antiferromagnetic coupling exchange.     

High Solubility of Hetero-Valence Ion （Cu^2＋） for Reducing Phase Transition and Thermal Expansion of ZrV1.6P0.4O7

Large thermal expansion at room temperature and high phase transition temperature of ZrV2O7 limit its practical applications and are reduced by the high solubility of hetero-valence ion （Cu^2＋） on the basis of an equal-valence substitution of P^5＋ for V^5＋. The temperature-dependent Raman spectra show that Zr0.9CU0.1V1.6P0.4O6.9 maintains a normal parent cubic structure till 173 K and transforms to a 3 × 3 × 3 cubic superstructure below 173K. Temperature dependent x-ray diffraction patterns of Zr0.9CU0.1V1.6P0.4O6.9 show near zero and negative thermal expansion. High solubility of lower valence Cu^2＋ relates to an equal-valence substitution of smaller pH for P^5＋, which extends the bond angle of V（P）-O-V in ZrV1.6P0.4O7 close to 180°. The change of microstructure is considered to be responsible for reduced phase transition temperature and thermal expansion.     

多模式光学数字全息实验教学系统

研究设计了一种多模式现代光学数字全息成像实验教学系统.该系统可通过多光路模式与CcD技术相结合建立并记录数字全息图频率场,采用不同数学算法和程序实现全息图的全数字化重构再现与图像的三维测量,并通过界面设计详细演示数字全息成像的原理与过程.     

Photoresponse of the In0.3Ga0.7N metal-insulator-semiconductor photodetectors

In0.3Ga0.7N metal-insulator-semiconductor （MIS） and metal-semiconductor （MS） surface barrier photodetectors have been fabricated. The In0.3Ga0.7N epilayers were grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The photoresponse and reverse current-voltage characteristics of the In0.3Ga0.7N MIS and MS photodetectors were measured. A best zero bias responsivity of 0.18 A/W at 450 nm is obtained for the In0.3Ga0.7N MIS photodetector with 10 nm Si3N4 insulator layer, which is more than ten times higher than the In0.3Ga0.7N MS photodetector. The reason is attributed to the decrease of the interface states and increase of surface barrier height by the inserted insulator. The influence of the thickness of the Si3N4 insulator layer on the photoresponsivity of the MIS photodetector is also discussed.     

从一女性患者尿道分泌物中分离出气球菌样微生物

从在中山医科大学附属三院妇科门诊临床初诊为尿道炎的妇性患者的尿道分泌物中,分别两次,间隔４ｄ,重复分离出相同的ＡＬＯ菌株。     

KLL dielectronic recombination process of He-like to O-like xenon ions

In this work,the KLL dielectronic recombination (DR) processes of highly charged He-like to O-like xenon ions are studied systematically by using a DR program,which is based on the multi-configuration Dirac-Fock (MCDF) method.The KLL DR resonant energies and the corresponding resonant strengths are calculated,emphasizing especially the effect of the Breit interaction on the DR strengths.The theoretical KLL DR spectra are obtained and compared with the latest experimental results obtained in the Shanghai Electron Beam Ion Trap.     

自发性细菌性腹膜炎致病菌培养方法的探讨

利用细胞冻融、低温高速离心技术、改良培养基的营养，提高了腹水细菌培养的阳性检出率。     

Influence of Polarization Effects on the Energy Band of AlGaN／GaN／AlGaN Heterostructures

The unintentionally doped samples of Al0.22Ga0.78N/GaN/Al0.22Ga0.78N/GaN multi-heterostructures have been designed and fabricated. The polarization induced charge and free-carrier charge distributions have been demonstrated and the energy band profile has also been calculated. The results indicate the existence of two-dimensional     

Investigation into the Energy Band Diagram and Charge Distribution in A1GaN／GaN Double Heterostructures by Self-Consistent Poisson-Schroedinger Calculations

The energy band diagram and charge distribution of the unintentional doped AIGaN/GaN/AIGaN/GaN double heterostructure were obtained by self-consistent Poisson Schroedinger calculations. The severe band tilting and high two-dimensional electron gas (2DEG) density mainly attribute to the large internal polarization intensity,which is c/ose to a linear function orAl composition. The influence orAl composition is investigated. The results show that band tilting enlarges and 2DEG gains with AI composition, and two-dimensional hole gas occurs when AI composition reaches a certain extent. The influence orAl composition and two-dimensional hole gas (2DHG)on devices is discussed.     

KLL dielectronic recombination process of He-like to O-like xenon ions

In this work, the KLL dielectronic recombination (DR) processes of highly charged He-like to O-like xenon ions are studied systematically by using a DR program, which is based on the multi-configuration Dirac-Fock (MCDF) method. The KLL DR resonant energies and the corresponding resonant strengths are calculated, asizing especially the effect of the Breit interaction on the DR strengths. The theoretical KLL DR spectra are obtained and compared with the latest experimental results obtained in the Shanghai Electron Beam Ion Trap.