| Photoresponse of the In0.3Ga0.7N metal-insulator-semiconductor photodetectors |
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| 作者姓名： | 周建军 文博 江若琏 刘成祥 姬小利 谢自力 陈敦军 韩平 张荣 郑有炓 |
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| 作者单位： | Key Laboratory of Advanced Photonic and Electronic Materials, Department of
Physics,Nanjing University, Nanjing 210093, China;Key Laboratory of Advanced Photonic and Electronic Materials, Department of
Physics,Nanjing University, Nanjing 210093, China;Key Laboratory of Advanced Photonic and Electronic Materials, Department of
Physics,Nanjing University, Nanjing 210093, China;Key Laboratory of Advanced Photonic and Electronic Materials, Department of
Physics,Nanjing University, Nanjing 210093, China;Key Laboratory of Advanced Photonic and Electronic Materials, Department of
Physics,Nanjing University, Nanjing 210093, China;Key Laboratory of Advanced Photonic and Electronic Materials, Department of
Physics,Nanjing University, Nanjing 210093, China;Key Laboratory of Advanced Photonic and Electronic Materials, Department of
Physics,Nanjing University, Nanjing 210093, China;Key Laboratory of Advanced Photonic and Electronic Materials, Department of
Physics,Nanjing University, Nanjing 210093, China;Key Laboratory of Advanced Photonic and Electronic Materials, Department of
Physics,Nanjing University, Nanjing 210093, China;Key Laboratory of Advanced Photonic and Electronic Materials, Department of
Physics,Nanjing University, Nanjing 210093, China |
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| 基金项目： | Project supported by the State Key Development Program
for Basic Research of China (Grant No~2006CB6049), the National
Natural Science Foundation of China (Grant No~60476030), and the Natural Science
Foundation of Jiangsu Province of China (Grant No~BK2 |
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| 摘 要： | In0.3Ga0.7N metal-insulator-semiconductor （MIS） and metal-semiconductor （MS） surface barrier photodetectors have been fabricated. The In0.3Ga0.7N epilayers were grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The photoresponse and reverse current-voltage characteristics of the In0.3Ga0.7N MIS and MS photodetectors were measured. A best zero bias responsivity of 0.18 A/W at 450 nm is obtained for the In0.3Ga0.7N MIS photodetector with 10 nm Si3N4 insulator layer, which is more than ten times higher than the In0.3Ga0.7N MS photodetector. The reason is attributed to the decrease of the interface states and increase of surface barrier height by the inserted insulator. The influence of the thickness of the Si3N4 insulator layer on the photoresponsivity of the MIS photodetector is also discussed.
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| 关 键 词： | 光电活度 金属绝缘体 半导体 物理 |
| 收稿时间： | 2006-10-18 |
| 修稿时间： | 2006-10-182006-11-27 |
Photoresponse of the In0.3 Ga0.7 N metal--insulator--semiconductor photodetectors |
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| Zhou Jian-Jun,Wen Bo,Jiang Ruo-Lian,Liu Cheng-Xiang,Ji Xiao-Li,Xie Zi-Li,Chen Dun-Jun,Han Ping,Zhang Rong and Zheng You-Dou.Photoresponse of the In0.3Ga0.7N metal-insulator-semiconductor photodetectors[J].Chinese Physics B,2007,16(7):2120-2122. |
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| Authors: | Zhou Jian-Jun Wen Bo Jiang Ruo-Lian Liu Cheng-Xiang Ji Xiao-Li Xie Zi-Li Chen Dun-Jun Han Ping Zhang Rong and Zheng You-Dou |
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| Institution: | Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China |
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| Abstract: | In0.3 Ga0.7N metal--insulator--semiconductor (MIS) and
metal--semiconductor (MS) surface barrier photodetectors have been
fabricated. The
In0.3 Ga0.7N epilayers were grown on sapphire by metalorganic
chemical vapour deposition (MOCVD). The photoresponse and reverse
current--voltage characteristics of the In0.3 Ga0.7N MIS and MS
photodetectors were measured. A best zero bias responsivity of 0.18 A/W at
450~nm is obtained for the In0.3 Ga0.7N MIS photodetector with
10~nm Si3N4 insulator layer, which is more than ten times
higher than the
In0.3 Ga0.7N MS photodetector. The reason is attributed to the
decrease of the interface states and increase of surface barrier height
by the inserted insulator. The influence of the thickness of the
Si3N4 insulator layer on the photoresponsivity of the MIS
photodetector is also discussed. |
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| Keywords: | InGaN photodetector metal--insulator--semiconductor structure |
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