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Fabrication and characterization of groove-gate MOSFETs based on a self-aligned CMOS process 总被引:2,自引:0,他引:2 下载免费PDF全文
N and P-channel groove-gate MOSFETs based on a self-aligned CMOS process
have been fabricated and characterized. For the devices with channel length
of 140nm, the measured drain induced barrier lowering (DIBL) was 66mV/V for
n-MOSFETs and 82mV/V for p-MOSFETs. The substrate current of a groove-gate
n-MOSFET was 150 times less than that of a conventional planar n-MOSFET.
These results demonstrate that groove-gate MOSFETs have excellent
capabilities in suppressing short-channel effects. It is worth emphasizing
that our groove-gate MOSFET devices are fabricated by using a simple process
flow, with the potential of fabricating devices in the sub-100nm range. 相似文献
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A specially designed experiment is performed for investigating gate-induced
drain leakage (GIDL) current in 90nm CMOS technology using lightly-doped
drain (LDD) NMOSFET. This paper shows that the drain bias $V_{\rm D}$ has a
strong effect on GIDL current as compared with the gate bias $V_{\rm G}$ at the
same drain--gate voltage $V_{\rm DG}$. It is found that the difference between
$I_{\rm D}$ in the off-state $I_{\rm D}-V_{\rm G}$ characteristics and the
corresponding one in the off-state $I_{\rm D}-V_{\rm D}$ characteristics, which is
defined as $I_{\rm DIFF}$, versus $V_{\rm DG}$ shows a peak. The difference between
the influences of $V_{\rm D}$ and $V_{\rm G}$ on GIDL current is shown
quantitatively by $I_{\rm DIFF}$, especially in 90nm scale. The difference is
due to different hole tunnellings. Furthermore, the maximum $I_{\rm DIFF
}$($I_{\rm DIFF,MAX})$ varies linearly with $V_{\rm DG}$ in logarithmic coordinates
and also $V_{\rm DG}$ at $I_{\rm DIFF,MAX}$ with $V_{\rm F}$ which is the characteristic
voltage of $I_{\rm DIFF}$. The relations are studied and some related
expressions are given. 相似文献
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技能训练性实验是学生分组实验的4种基本类型之一,其目的是训练学生认识和掌握某种仪器的使用方法、装配技术等知识技能。通过对以往教学模式的研究,发现优点,找到不足,通过教学实践,力图探究一种新型技能训练性实验教学模式。 相似文献
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通过归纳国内外涡轮叶顶泄漏控制研究,总结了轴流、向心涡轮采用的叶顶泄漏控制方法及取得的研究进展,分析了不同控制方法的特点和不足,最后对涡轮叶顶泄漏控制方法的发展趋势进行了展望。目前,带冠轴流涡轮叶顶泄漏控制方法除了传统的迷宫密封,还有蜂窝密封、干气密封等;不带冠轴流涡轮控制方法种类较多,可细分为主动控制方法和被动控制方法;开式和半开式向心涡轮控制方法目前仅有叶型优化和机匣开槽;闭式向心涡轮控制方法较为单一,以迷宫密封为主。轴流涡轮中多种泄漏控制方法耦合具有较好的应用前景;开式和半开式向心涡轮中综合有效的叶顶泄漏控制方法,以及闭式向心涡轮轮盖空腔非设计工况和非定常工况下的泄漏特性有待进一步研究。 相似文献