密度泛函理论研究簇合物(HFGaN3)n (n=1-6)：尺寸效应

用密度泛函理论DFT方法,计算研究不对称簇合物(HFGaN3)n (n=1-6)的几何构型、稳定性、IR谱和热力学性质。结果表明,簇合物(HFGaN3)n (n=2-6)的优化构型拥有一个Ga和α−N原子交替的2n元环状结构。通过计算研究(HFGaN3)n (n=1-6)的平均结合能、二阶能量差分和能隙与团簇尺寸关系,发现后两者表现出明显的“奇－偶”振荡现象。对计算获得的IR谱进行归属,获得四个特征区。讨论了团簇尺寸和温度对(HFGaN3)n (n=1-6)热力学函数的影响。由焓变和吉布斯自由能可知,200-800 K温度范围内由单体形成稳定的多聚体(HFGaN3)n (n=2-6)在热力学上有利。     

Fabrication and characterization of groove-gate MOSFETs based on a self-aligned CMOS process

N and P-channel groove-gate MOSFETs based on a self-aligned CMOS process have been fabricated and characterized. For the devices with channel length of 140nm, the measured drain induced barrier lowering (DIBL) was 66mV/V for n-MOSFETs and 82mV/V for p-MOSFETs. The substrate current of a groove-gate n-MOSFET was 150 times less than that of a conventional planar n-MOSFET. These results demonstrate that groove-gate MOSFETs have excellent capabilities in suppressing short-channel effects. It is worth emphasizing that our groove-gate MOSFET devices are fabricated by using a simple process flow, with the potential of fabricating devices in the sub-100nm range.     

α-羰酰氧基苯乙酮及α-羟基苯乙酮的制备

以季铵盐为催化剂,由α-溴代苯乙酮合成α-羰酰氧基苯乙酮,然后在碱性条件下,高效制备了α-羟基苯乙酮,转化率和选择性分别为100.0%和91.2%,其结构经¹H NMR确证。      

基于文氏改进谱的二维粗糙海面模型及其电磁散射研究

基于文氏改进功率谱和Donelan方向分布的实验结论,结合经典的Monte Carlo法提出了一种适用于不同水深、不同风浪成长阶段的二维粗糙海面模型.在经典的双尺度法计算海面后向散射的基础上,结合小斜率近似法的仿真结果,对电磁散射计算方法进行改进.通过与典型海杂波均值散射系数GIT模型的拟合结果进行对比,验证了文氏改进谱在中国近海海面模拟的适应性与改进后电磁散射计算方法的有效性.     

卟啉修饰的碳纳米管研究进展

从问题解决的视角介绍碳纳米管的性质和在应用方面存在的问题。重点介绍卟啉修饰的碳纳米管的优势以及卟啉修饰碳纳米管的方法、应用和近期的研究进展。     

N型槽栅金属-氧化物-半导体场效应晶体管抗热载流子效应的研究

用二维器件仿真软件MEDICI模拟分析了N型槽栅金属-氧化物-半导体场效应晶体管的热载流 子特性及其对器件性能所造成的损伤,并与相应常规平面器件进行了比较,同时用器件内部 物理量的分布对造成两种结构器件特性不同的原因进行了解释.结果表明槽栅器件对热载流 子效应有明显的抑制作用,但槽栅器件对热载流子损伤的反应较平面器件敏感. 关键词： 槽栅MOSFET 热载流子效应 界面态 特性退化     

高分子键联金属卟啉的合成及催化性能

高分子键联金属卟啉的合成及催化性能;高分子担载金属卟啉; 环己烯; 催化氧化     

非化学专业无机及分析化学理论与实验教学的一致性

在"讲一练二考三"新型教学理念的指导下,结合多年非化学专业无机及分析化学课程理论教学和实验教学的经验,针对无机及分析化学理论课和实验课教学的特点和存在的一些问题,阐述了在无机及分析化学课程教学中理论课教学内容和实验课教学内容相结合的实践探索和体会,以及取得的效果。     

氮杂环高分子化合物的电催化性能进展

介绍了氮杂环高分子配合物及其电催化性能，归纳了含氮杂环高分子配合物的结构类型及其在界面上的自组装过程，分析了氮杂环高分子自组装膜表面化学反应的特性。对自组装技术制备超薄层材料及表面改性技术在分子电子器件等方面的应用作了评述。     

HOT-CARRIER GENERATION MECHANISM AND HOT-CARRIER EFFECT IMMUNITY IN DEEP-SUB-MICRON GROOVED-GATE PMOSFETS

Based on the hydrodynamic energy transport model, immunity from the hot-carrier effect in deep-sub-micron grooved-gate p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) is analysed. The results show that hot carriers generated in grooved-gate PMOSFETs are much smaller than those in planar ones, especially for the case of channel lengths lying in the deep-sub-micron and super deep-sub-micron regions. Then, the hot-carrier generation mechanism and the reason why grooved-gate MOS devices can suppress the hot-carrier effect are studied from the viewpoint of physical mechanisms occurring in devices. It is found that the highest hot-carrier generating rate is at a medium gate bias voltage in three stress areas, similar to conventional planar devices. In deep-sub-micron grooved-gate PMOSFETs, the hot-carrier injection gate current is still composed mainly of the hot-electron injection current, and the hole injection current becomes dominant only at an extremely high gate voltage. In order to investigate other influences of the hot-carrier effect on the device characteristics, the degradation of the device performance is studied for both grooved-gate and planar devices at different interface states. The results show that the drift of the device electrical performance induced by the interface states in grooved-gate PMOSFETs is far larger than that in planar devices.