Auto-deposition of 210Bi and 210Po on nickel discs and their application in the analysis of natural waters

Journal of Radioanalytical and Nuclear Chemistry - This study presents a time-efficient method of analysing 210Pb, 210Bi, and 210Po in natural waters. The optimum pH (1.00), temperature...     

Graphene Saturable Absorber Mirror for Mode-Locked Orange Pulse Laser

Journal of Russian Laser Research - We demonstrate a passively-mode-locked Pr3+: LuLiF4 laser operated at the 604 nm orange wave-length, using monolayer graphene as a saturable absorber. The...     

TiO2/CuInS2-sensitized structure for sensitive photoelectrochemical immunoassay of cortisol in saliva

Journal of Solid State Electrochemistry - Cortisol, a steroid hormone, has been confirmed as a kind of biomarker that reflects the stress response of psychobiology and related adverse health...     

Positive ground state solutions for Schrödinger–Poisson system with critical nonlocal term in ℝ3

This paper is dedicated to studying the following Schrödinger–Poisson system $$\left\{\begin{array}{ll}-\mathrm{\Delta }u+V(x)u-K(x)\varphi |u{|}^{3}u=a(x)f(u),& x\in {ℝ}^3,\\ -\mathrm{\Delta }\varphi =K(x)|u{|}^5,& x\in {ℝ}^3.\end{array}\right.$$ Under some different assumptions on functions V(x), K(x), a(x) and f(u), by using the variational approach, we establish the existence of positive ground state solutions.     

固体力学有限元体系的结构拓扑变化理论

本文是文[1]的继续.文[1]提出了杆件系统的结构拓扑变化理论和拓扑变化法本文将这一理论和方法推进到连续体有限元体系;且在此基础上揭示出有限元体系的一个新性质,称为基本位移之梯度的正交性定理,从而给出一套设计敏度的显式表达式,可直接用于计算.     

烟气中Hg的氧化机理的研究

本文对Ｈｇ与Ｃｌ２在烟气中的氧化反应进行了热力平衡计算和动力学计算。平衡计算的结果表明有ＣＩ元索存在时Ｈｇ的氧化率为１００％，而在相同的条件下动力学计算纺果为Ｈｇ的氧化率在２０％～８０％之间变化，与实验结果吻合。实际的氧化反应是一种超平衡状态，不能达到理想的平衡状态。因此应采用动力学与热力平衡分析相结合的方法研究Ｈｇ在烟气中的反应机理。同时，计算结果显示Ｃｌ含量对Ｈｇ的氧化率的影响很大．     

用自适应脉冲微扰引导混沌系统到周期解

用自适应脉冲微扰方法控制的系统的某个系统变量作为驱动,设计了一种自适应控制器方法对两个或多个响应混沌系统进行脉冲微扰,引导这些系统从混沌运动到低周期运动,实现同时控制多个混沌系统到不同的周期态. 当选择相同的自适应控制器输入变量实施脉冲微扰时,还可控制两个或多个混沌系统达到不同的周期态同步. 通过对R?ssler混沌系统的仿真研究证实了方法的有效性. 关键词： 混沌控制 系统参量 自适应控制器 脉冲微扰 周期态同步     

Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.