A snapback suppressed reverse-conducting IGBT with uniform temperature distribution

A novel reverse-conducting insulated-gate bipolar transistor(RC-IGBT) featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to the n-collector, which achieves the hole emission from the p-collector at a small collector size and suppresses the snapback effectively. Moreover, the current is uniformly distributed in the whole wafer at both IGBT mode and diode mode, which ensures the high temperature reliability of the RC-IGBT. Additionally, the P-plug acts as the base of the N-buffer/P-float/N-buffer transistor, which can be activated to extract the excessive carriers at the turn-off process. As the the simulation results show, for the proposed RC-IGBT, it achieves almost snapback-free output characteristics with a uniform current density and a uniform temperature distribution, which can greatly increase the reliability of the device.     

Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction

Effective spin-polarized injection from magnetic semiconductor (MS) to nonmagnetic semiconductor (NMS) has been highlighted in recent years. In this paper we study theoretically the dependence of nonequilibrium spin polarization (NESP) in NMS during spin-polarized injection through the magnetic p-n junction. Based on the theory in semiconductor physics, a model is established and the boundary conditions are determined in the case of no external spin-polarized injection and low bias. The control parameters that may influence the NESP in NMS are indicated by calculating the distribution of spin polarization. They are the doping concentrations, the equilibrium spin polarization in MS and the bias. The effective spin-polarized injection can be realized more easily by optimizing the above parameters.     

Γ分布密度函数的性质

分析了Γ分布密度函数的性质,指出了该密度函数与相应参数之间的关系.主要研究第二个参数对密度的影响,证明了β增大时Γ(α,β)分布密度极大值也增大,还指出了β变化时Γ(α,β)分布密度与另一特定密度曲线交点的变化规律.     

半直线上的独立随机环境中可逗留的随机游动

主要研究了在随机环境独立的情况下,右半直线上随机环境中可逗留的随机游动的常返性和非常返性.     

用外磁场控制电流感应磁化翻转效应中的临界电流方法

应用基于磁动力学方程的宏观唯象模型,研究了弱外磁场下纳米尺度赝自旋阀结构的电流感应磁化翻转效应.在统一考虑铁磁/非磁界面的自旋相关散射以及铁磁层中的自旋积累和弛豫过程后,给出了赝自旋阀结构在弱外磁场下的磁化翻转条件和临界电流.对该效应的数值计算解释了弱外磁场下赝自旋阀结构的电阻-电流回线的偏移,并给出了用外磁场控制电流感应磁化翻转效应中的临界电流方法. 关键词： 电流感应磁化翻转 外磁场 临界电流 赝自旋阀     

Symmetry ensemble theory of spin wave emitting effectdriven by current in nanoscale magnetic multilayer

<正>This paper proposes a symmetry ensemble model for the magnetic dynamics caused by spin transfer torque in nanoscale pseudo-spin-valves,in which individual spin moments in the free layer are considered as subsystems to form a spinor ensemble.The magnetization dynamics equation of the ensemble was developed.By analytically investigating the equation,many magnetization dynamics properties excited by polarized current reported in experiments,such as double spin wave modes and the abrupt frequency jump,can be successfully explained.It is pointed out that an external field is not necessary for spin wave emitting(SWE) and a novel perpendicular configuration structure can provide much higher SWE efficiency in zero magnetic field.     

A novel superjunction MOSFET with improved ruggedness under unclamped inductive switching

The ruggedness of a superjunction metal–oxide semiconductor field-effect transistor (MOSFET) under unclamped inductive switching conditions is improved by optimizing the avalanche current path. Inserting a P-island with relatively high doping concentration into the P-column, the avalanche breakdown point is localized. In addition, a trench type P+ contact is designed to shorten the current path. As a consequence, the avalanche current path is located away from the N+ source/P-body junction and the activation of the parasitic transistor can be effectively avoided. To verify the proposed structural mechanism, a two-dimensional (2D) numerical simulation is performed to describe its static and on-state avalanche behaviours, and a method of mixed-mode device and circuit simulation is used to predict its performances under realistic unclamped inductive switching. Simulation shows that the proposed structure can endure a remarkably higher avalanche energy compared with a conventional superjunction MOSFET.     

电流驱动磁化翻转中的热效应

从理论上研究了电流驱动磁开关中的热效应,在Neel-Brown弛豫时间理论和Li等的有效温度的工作基础上作了改进.在对称系综模型的Landau-Lifshitz-Gilbert和Fokker-Planck方程的基础上,分析了电流驱动磁动力学开关过程和电流引起磁势能的变化,提出一个新的电流感应磁势垒降低模型.新模型是非线性的,与Li等的有效温度模型不同.在此模型的基础上,讨论了开关临界电流对温度、开关时间的依赖关系,理论与实验相符合.对电流引起的样品温升的实验曲线进行了修正,实验结果与文中的非线性势垒降低模 关键词： 热效应 自旋传输矩 Neel-Brown弛豫时间 Fokker-Planck方程     

随机环境中马氏链状态的常返性与暂留性

给出了随机环境中马氏链状态必然是弱常返或强暂留的几个充分条件,引入了状态周期的概念,得到类似于经典马氏链状态周期的几个性质.引入了随机环境中马氏链状态的几个数字特征,给出了随机环境中马氏链状态是弱常返与强常返等价的充分条件,利用这一条件可以说明相关文献所出现的错误结论.     

YAG:Ce蓝光转换材料的合成和发光性质研究

铈激活的钇铝石榴石(YAG:Ce)由高温固相反应制备.样品证明为纯的的石榴石物相.YAG:Ce的激发光谱为双峰结构,主要激发峰在460nm,与GaN的蓝光发射匹配.YAG:Ce的发射光谱为一宽带,波长范围从蓝绿到红,主峰波长为540nm,能与GaN的蓝光组合形成高亮度白光.YAG:Ce在漫反射光谱中的的两个吸收峰与YAG:Ce的激发峰相吻合,进一步证明了铈激活的YAG对GaN蓝光的有效吸收.YAG:Ce有很高的发光强度和高达89%的量子效率.