| Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction |
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| 作者姓名： | 张磊 邓宁 任敏 董浩 陈培毅 |
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| 作者单位： | Institute of Microelectronics, Tsinghua University, Beijing 100084,
China;Institute of Microelectronics, Tsinghua University, Beijing 100084,
China;Institute of Microelectronics, Tsinghua University, Beijing 100084,
China;Institute of Microelectronics, Tsinghua University, Beijing 100084,
China;Institute of Microelectronics, Tsinghua University, Beijing 100084,
China |
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| 基金项目： | Project supported by the National Natural Science
Foundation of China (Grant No 60606021), the Specialized Research Fund for
the Doctoral Program of Higher Education of China (Grant No~20060003067)
and the Key Fundamental Research Foundation of Tsinghua U |
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| 摘 要： | Effective spin-polarized injection from magnetic semiconductor （MS） to nonmagnetic semiconductor （NMS） has been highlighted in recent years. In this paper we study theoretically the dependence of nonequilibrium spin polarization （NESP） in NMS during spin-polarized injection through the magnetic p-n junction. Based on the theory in semiconductor physics, a model is established and the boundary conditions are determined in the case of no external spin-polarized injection and low bias. The control parameters that may influence the NESP in NMS are indicated by calculating the distribution of spin polarization. They are the doping concentrations, the equilibrium spin polarization in MS and the bias. The effective spin-polarized injection can be realized more easily by optimizing the above parameters.
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| 关 键 词： | 自旋极化 磁性半导体 P-N结 控制参数 |
| 收稿时间： | 2006-09-24 |
| 修稿时间： | 2006-09-242006-12-14 |
Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction |
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| Zhang Lei,Deng Ning,Ren Min,Dong Hao and Chen Pei-Yi.Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction[J].Chinese Physics B,2007,16(5):1440-1444. |
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| Authors: | Zhang Lei Deng Ning Ren Min Dong Hao and Chen Pei-Yi |
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| Affiliation: | Institute of Microelectronics, Tsinghua University, Beijing 100084, China |
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| Abstract: | Effective spin-polarized injection from magnetic semiconductor (MS)
to nonmagnetic semiconductor (NMS) has been highlighted in recent
years. In this paper we study theoretically the dependence of
nonequilibrium spin polarization (NESP) in NMS during spin-polarized
injection through the magnetic p-n junction. Based on the theory in
semiconductor physics, a model is established and the boundary
conditions are determined in the case of no external spin-polarized
injection and low bias. The control parameters that may influence the
NESP in NMS are indicated by calculating the distribution of spin
polarization. They are the doping concentrations, the equilibrium
spin polarization in MS and the bias. The effective spin-polarized
injection can be realized more easily by optimizing the above
parameters. |
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| Keywords: | spin polarization spin-polarized injection magnetic
semiconductor p-n junction |
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