2009年一次华北强桑拿天气过程的动力识别

本文数值模拟并诊断分析了2009年7月华北的一次桑拿天过程, 分析了高温高湿天气的环流特征, 温度、 湿度的水平和垂直分布特征, 位涡分布特征等. 分析发现, 此次桑拿天事件高层为反气旋性环流的高压控制, 水平分布图上, 低层相对湿度大. 垂直剖面上, 中低层为下沉气流和暖湿区, 有明显的水汽梯度和垂直温度梯度, 有倾斜的位涡分布. 既然桑拿天发生在夏季普遍高温的大环境之下, 因此靠单纯的温度或湿度来动力识别和诊断桑拿天, 有较大难度. 本文抓住华北地区桑拿天过程高温、 高湿、 高位涡的特点, 引入一个适合于桑拿天的湿热力位涡参数(MTPV, 它表示为▽ q · (▽ θ × ▽ Q), 这里q是湿度, 表示为大气或者云中水汽和所有水凝物的总和, θ 是位温, Q是位涡), 对桑拿天进行动力诊断分析, 并通过实际个例的计算分析作出简化. 个例分析发现, 此次高温高湿的桑拿天过程伴随MTPV的异常. 虽然2009年7月此次华北地区桑拿天过程有较高的温度, 较大的湿度和倾斜位涡发展, 但是单个变量的范围远大于我们要研究的华北地区桑拿天的爆发范围. 而结合这三个变量引入的MTPV及其简化形式, 无论从经向还是纬向剖面图来看, MTPV的异常大值区相对集中在北京及其周边的华北地区对流层的低层, 并维持. 因而, MTPV及其简化形式均能对此次高温高湿的桑拿天进行较好的动力识别。     

Al高掺杂浓度对ZnO禁带和吸收光谱影响的第一性原理研究

采用密度泛函理论框架下的第一性原理平面波超软赝势方法, 建立了未掺杂与不同浓度的Al原子取代Zn原子的两种Zn_1-xAl_xO超胞模型,分别对模型进行了几何结构优化、态密度分布和能带分布的计算. 结果表明: ZnO高掺杂Al的条件下, 掺杂的Al原子浓度越大,间隙带越窄, 蓝移越弱. 计算结果和实验结果相一致.     

有机发光二极管的光致磁电导效应

制备了结构为ITO/CuPc/NPB/Alq₃/LiF/Al的常规有机发光二极管, 之后对器件采用波长为442 nm和325 nm的激光线进行照射产生激子, 并在小偏压下(保证器件没有开启)对激子的演化过程进行控制, 同时测量器件的光致磁电导(photo-induced magneto-conductance, PIMC). 实验发现, 不同于电注入产生激子的磁电导效应, PIMC在正、反小偏压下表现出明显不同的磁响应结果. 当给器件加上正向小偏压时, 器件的PIMC在0-40 mT范围内迅速上升; 随着磁场的进一步增大, 该PIMC增加缓慢, 并逐渐趋于饱和. 反向小偏压时, 器件的PIMC随着磁场也是先迅速增大(0-40 mT), 但达到最大值后却又逐渐减小. 通过分析外加磁场对器件光生载流子微观过程的影响, 采用'电子-空穴对'模型和超精细相互作用理论对正向偏压下的PIMC进行了解释; 反向偏压下因各有机层的能级关系, 为激子与电荷相互作用提供了必要条件, 运用三重态激子与电荷的反应机制可以解释PIMC出现高场下降的实验现象.     

Influence of a two-dimensional electron gas on current—voltage characteristics of Al0.3{Ga}0.7 N/GaN high electron mobility transistors

The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors（HEMTs） are investigated and simulated using the self-consistent solution of the Schro dinger and Poisson equations for a two-dimensional electron gas（2DEG） in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 10^13 A/m^2 within a very narrow region（about 5 nm）.For a current density of 7 × 10^13 A/m62 passing through the 2DEG channel with a 2DEG density of above 1.2 × 10^17 m^-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.     

Sensitivity enhancement of distributed polarization coupling detection in Hi-Bi fibers

The intensity and position of the coupling points in high birefringence(Hi-Bi)fibers can be detected effectively using distributed polarization coupling(DPC)detection.The detection sensitivity can decrease due to mechanical vibration disturbance and environment noise.Thus,a method based on empirical mode decomposition is proposed to detect weak mode coupling points.The simulation and experimental results illustrate that the proposed method can suppress the noise effectively and improve sensitivity significantly.The method can identify coupling points as weak as-60 dB embedded in noise automatically and effectively.The algorithm is applicable for DPC,and the experimental sensitivity is improved by 10 dB.     

Improved Monte Carlo model for multiple scattering calculations

The coupling between the Monte Carlo (MC) method and geometrical optics to improve accuracy is inves- tigated. The results obtained show improved agreement with previous experimental data, demonstrating that the MC method, when coupled with simple geometrical optics, can simulate multiple scattering with enhanced fidelity.     

Highly linear transmission and EVM improvement of vector modulation signals for radio-over-fiber applications

The principle of error vector magnitude (EVM) against modulator nonlinearity for vector modulation signal (VMS) transmission in radio-over-fiber (RoF) systems is theoretically and experimentally investigated. A highly linear modulation scheme is proposed and demonstrated using a single-drive dual parallel Mach-Zehnder modulator (MZM). This method improves EVM performance and enlarges the linear input dynamic range of the VMS transmission. An index of maximum allowable input power difference (MAIPD) that reflects the difference of upper input power limits between these two schemes is measured. An EVM limitation of 5% MAIPD has 5 dB. Both 16and 64-QAM results indicate that the proposed scheme supports VMS transmission better than the MZM one.     

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

The effects of ^60Co γ-ray irradiation on the DC characteristics of enhancement-mode A1GaN/GaN high-electron-mobility transistors

The effects of ^60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electron- mobility transistors （E-mode HEMTs） are investigated. The results show that having been irradiated by^60Co γ-rays at a dose of 3 Mrad （Si）, the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode A1GaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated.