Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using a micro-Raman technique

Self-heating in a multifinger AlGaN/GaN high electron mobility transistor (HEMT) is investigated by micro-Raman spectroscopy. The device temperature is probed on the die as a function of applied bias. The operating temperature of the AlGaN/GaN HEMT is estimated from the calibration curve of a passively heated AlGaN/GaN structure. A linear increase of junction temperature is observed when direct current dissipated power is increased. When the power dissipation is 12.75 W at a drain voltage of 15 V, a peak temperature of 69.1°C is observed at the gate edge on the drain side of the central finger. The position of the highest temperature corresponds to the high-field region at the gate edge.     

Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers

The advantages of InGaN based light-emitting diodes with InGaN/GaN multilayer barriers are studied.It is found that the structure with InGaN/GaN multilayer barriers shows improved light output power,lower current leakage,and less efficiency droop over its conventional InGaN/GaN counterparts.Based on the numerical simulation and analysis,these improvements on the electrical and the optical characteristics are mainly attributed to the alleviation of the electrostatic field in the quantum wells(QWs) when the InGaN/GaN multilayer barriers are used.     

Breakdown voltage analysis of Al_0.25Ga_0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas(2DEG) regions in AlGaN/GaN high electron mobility transistors(HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

The effects of ⁶⁰Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors

The effects of 60Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electron-mobility transistors (E-mode HEMTs) are investigated. The results show that having been irradiated by 60Co γ-rays at a dose of 3 Mrad (Si), the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode AlGaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated.     

Longitudinal,transverse,density-of-states,and conductivity masses of electrons in（001）,（101） and（111） biaxiallystrained-Si and strained-Si1-xGex

In this study,the electron effective masses,including longitudinal,transverse,density-of-states and conductivity effective masses,have been systematically investigated in(001),(101) and(111) biaxially strained Si and Si1-xGex.It is found that the effect of strain on the longitudinal and transverse masses can be neglected,that the density-of-states masses in(001) and(110) biaxially strained Si and Si1-xGex materials decrease significantly with increasing Ge fraction(x),and that the conductivity masses along typical orientations in(001) and(110) strained Si and Si1-xGex.are obviously different from those in relaxed Si.The quantitative results obtained from this work may provide valuable theoretical references to understanding strained materials physics and studying conduction channel design related to stress and orientations in the strained devices.     

气相色谱/质谱测定水产品中氯霉素残留量

样品经均质后,用乙酸乙酯提取,正己烷脱脂,C18小柱净化,衍生后用GC ECD,NCI GC MS,NCI GC MSMS多种方法定性及定量测定,外标法定量。在0.1μg/kg水平,回收率为72%～110%,平行测定9次后相对标准偏差为16 5%。质量浓度在0～10μg/L范围内呈良好线性关系,相关系数r=0.9997。     

海绵Sigmadocia sp.中的新神经酰胺的结构确定

从南海海绵Sigmadocia sp．中分离得到两个新的神经酰胺、通过IR．ID NMR,2D NMR．FAB MS等波谱和化学方法,确定了它们的结构分别为N-(正-二十二碳酰基)-2-氨基-正-二十烷-1,3、4,5-四羟醇(1)和N-(2‘-羟基-正-二十二碳酰基)-2-氨基-正-十八烷-1．3．4-三羟醇(2）。     

三维FW-H方程与CAA数值模拟匹配技术研究

本文研究了三维FW-H方程与CAA数值模拟匹配技术。首先验证了适于亚音任意运动声源的Farassat时域公式和适于亚音匀速直线运动声源的Lockard频域公式,采用均匀流中单极子源声辐射问题对两类公式进行了校核。进一步,采用FW-H／CAA匹配技术对风扇／压气机前传声进行了预测。近声场基于轴对称三维CAA方法获得,远声场则基于近声场数据采用三维可穿透FW-H方程时域公式进行预测,并校核算例着重分析了不同积分面对远场声指向性的影响。本文研究证实了FW-H／CAA数值模拟匹配技术的可行性和解决工程实际问题的潜力。     

高效液相色谱/串联质谱法同时测定虾中氯霉素、甲砜霉素和氟甲砜霉素残留量

用高效液相色谱／串联质谱(LC／MS,／MS)同时测定虾中的氯霉素(CAP)、甲砜霉素(TAP)和氟甲砜霉素(FF)。均质后的虾样品,采用碱化乙酸乙酯提取。浓缩提取物经液．液分配(LLP)去除脂肪,C18固相萃取(SPE)柱净化后,采用LC／MS／MS电喷雾电离(ESI),负离子,多反应监测(MRM)模式检测,外标法定量。检出限为：氯霉素和氟甲砜霉素0．01ng/g;甲砜霉素为0．05ng／g。在添加浓度0．1～2．0ng/g范围内,氯霉素回收率为73．9％～96．0％;甲砜霉素回收率为78．6％～99．5％;氟甲砜霉素回收率为74．9％～103．7％;相对标准偏差(RSD)均小于6．4％。     

液相色谱/串联质谱线性组合法测定动物组织中硝基呋喃代谢产物

研究了对动物组织中4种硝基呋喃类代谢产物AMOZ、AHD、SEM、AOZ的同位素稀释HPLC—MS／MS线性组合分析方法,以2-基苯甲醛作为衍生化试剂,AMOZ—d5、AOZ-4作内标,用乙酸乙脂提取,用自制的净化试剂净化,以乙腈-0．1％甲酸为流动相,采用梯度洗脱,可适应不同种类的动物组织样品前处理,15min可将4种代谢产物完全分离并测定。提出了HPLC—MS／MS多重反应监测线性组合法的原理并进行了验证,回收率为85％-118％;定量限（LOQ）为0．1μg／kg;检出限（LOD）为0．03μg／kg。