锂在共轭双键高分子中的电化学嵌入反应I.锂在聚吡咯中嵌入过程的电子能谱研究

通过电子能谱(AES 和ESCA)研究了锂-聚吡咯电池的放电反应,认为该电池的放电是锂在聚吡咯的嵌入过程,嵌入的锂主要是以Li[+]存在,其1s电子的结合能为56.0eV.Li[+]在嵌合物中的扩散系数D为10[-12]一10[-13]cm[2].s[-1]数量级。     

化学镀镍诱发过程的研究 II.用电子能谱研究诱发过程

In the previous paper, it was reported that a sudden decrease down to -0.6V and lower in stationary potential was observed from the stationary potential-time curve and the reaction of electroless nickeling could be induced by metallic iron catalyst when it was in contact with substrate metallic copper. In this paper, AES and XPS surface analysis and depth profile technique was employed to investigate the surface and depth distribution of Ni, Cu, Fe and P in the nickel coating deposited on the substrate metal. The experimental results showed that there was a thin adsorption layer consisting of C, S and Cl. The pure electroless nickel deposition, its Ni/P ratio being about two, existed under the adsorption layer. A layer with rapidly changed Ni/P ratio occurred close to the surface of substrate metal, under this layer the substrate metal was alloyed with Ni and P, thus becoming Cu-Ni-P alloy. The ratio of components in this alloy was found to be Cu:Ni:P=56:36:5. This fact explained why the electroless nickel deposition can preferably adhered to the substrate metal. In inducing process, Fe was not detected by AES from the substrate metal and nickel deposition. Thus it showed that the inducing reaction takes place without the deposition of inducing metal.     

超高真空俄歇电子能谱原位加热和GaN热效应研究

An in situ heating system was built for the Auger electron spectroscopy to investigate the thermal effect of Auger lines. A GaN sample was studied in this system. The kinetic energy of Ga LMM and MVV Auger lines were observed to shift negatively with temperature increasing. By using ab initio calculation, the theoretical Ga MVV Auger line shape was fit, which well reflects the inner property of the line. The Auger shift with heating is related with the valence electron rearrangement in the thermal expansion of the local bonds.     

钛基体中离子注入钯的电催化性能

钛基体在能量40keV下,离子注入1×10^1^6～1×10^1^8Pd^+/cm^2.在30%的KOH溶液中,研究了这些电极对氢和氧析出的电催化性能.结果表明, 离子注入电极的催化活性明显地优于未注入的钛基体,并随着离子注入剂量的增大,催化活性增大. 由极化测量求得有关动力学参数.这些数据表明,用高剂量钯离子注入的钛电极, 其电化学性能与钯电极相似.根据AES和XPS数据,讨论了注入电极表面的组成     

分子束外延GaN薄膜的X射线光电子能谱和俄歇电子能谱研究

用XPS和AES电子能谱的方法对等离子体辅助分子束外延(MBE)生长的GaN薄膜进行了表面分析和深度剖析.发现红外分子束外延(RFMBE)生长的富镓GaN薄膜实际表面存在O和C吸附层,C主要为物理吸附,而O在GaN表面形成局域化学键产生氧络合物覆盖层,并形成一定的深度分布.杂质O在GaN带隙中导带底形成杂质带同时引入深受主能级,使得带隙变窄室温光吸收谱向低能方向移动,光致发光谱出现宽带发光峰.从而影响GaN薄膜的电学和光学性质 关键词： GaN薄膜 X射线光电子能谱 俄歇电子能谱 表面分析     

MBE生长氮化镓薄膜的X光电子谱和俄歇电子谱分析

用X光电子谱和俄歇电子能谱的方法对射频等离子体辅助分子束外延(MBE)技术生长的氮化镓(GaN)薄膜进行了表面分析和深度剖析.发现薄膜实际表面存在O和C吸附层,C主要为表面污染,而O形成一定的深度分布,从而影响氮化镓薄膜的电学和光学性质.     

英平诸痹灵药酒中铜锰镍含量的分析

采用火争原子吸收分光度法测定了5种英平诸痹灵药酒中铜,锰,镍的含量,结果表明,该类药酒中镍,锰的含量较丰富,以锰的含量为最高,镍的含量次之,铜的含量相对最低。     

质子与Be原子的碰撞电离过程研究

本文采用初态程函近似一连续扭曲波方法研究了质子和Be原子的碰撞电离过程：计算了入射离子能量从50keV／u到10000keV／u时一阶和二阶微分散射截面随电离电子能量和角度的变化规律，并对各种碰撞电离机理进行了详细讨论；计算所得总截面随入射离子能量的变化规律也与已有数据一致；另外采用FAC代码研究了Be原子的内壳层电子（1s）被电离后的俄歇过程．     

英格拉霉素右部片断的合成

英格拉霉素右部片断含有挑战性的手性叔醇结构.以本实验室发展的[2,3]-Meisenheimer重排为关键反应,以D-丝氨酸为起始原料,经Wittig反应、[2,3]-Meisenheimer重排、NaBH4选择性还原酯基等15步反应,合成了英格拉霉素右部片断,总收率为28%,ee值为90%.     

非故意产生的持久性有机污染物的生成和排放研究进展

二口恶英类、多氯联苯、多氯萘、五氯苯和六氯苯等持久性有机污染物可在许多工业过程中非故意产生,故称之为非故意产生的持久性有机污染物(UP-POPs).上述UP-POPs会随烟气、废渣等排放进入环境,它们具有高毒性,对生态环境构成严重威胁,已列入或拟列入斯德哥尔摩公约管控名单.本文介绍了上述几类典型的UP-POPs的特性,总结了若干典型工业源UP-POPs的排放特征,归纳了典型UP-POPs的主要生成机制,对全球或区域范围内UP-POPs的主要源及其排放量进行了总结.最后,对我国废弃物焚烧、钢铁生产和有色金属冶炼等主要工业源UP-POPs的排放特征和排放因子研究做了简要的概述,并进行了展望.