Characterization of 4H-SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy

The infrared reflectance spectra of both 4H–SiC substrates and epilayers are measured in a wave number range from 400 cm 1 to 4000 cm 1 using a Fourier-transform spectrometer. The thicknesses of the 4H–SiC epilayers and the electrical properties, including the free-carrier concentrations and the mobilities of both the 4H–SiC substrates and the epilayers, are characterized through full line-shape fitting analyses. The correlations of the theoretical spectral profiles with the 4H–SiC electrical properties in the 30 cm 1 –4000 cm 1 and 400 cm 1 –4000 cm 1 spectral regions are established by introducing a parameter defined as error quadratic sum. It is indicated that their correlations become stronger at a higher carrier concentration and in a wider spectral region (30 cm 1 –4000 cm 1 ). These results suggest that the infrared reflectance technique can be used to accurately determine the thicknesses of the epilayers and the carrier concentrations, and the mobilities of both lightly and heavily doped 4H–SiC wafers.     

裂解同时烷基化气相色谱/质谱鉴定醇酸树脂

 用裂解同时烷基化气相色谱-质谱联用技术（SPM-GC-MS）对不同类型的醇酸树脂进行分析研究,将衍生化试剂四甲基氢氧化胺与样品同时裂解,经高效毛细管气相色谱分离,质谱鉴定,可区分醇酸树脂中的多元醇、多元酸、植物油类型,由此对改性醇酸树脂作结构鉴定。与直接裂解-气相色谱-质谱联用技术比较,具有样品前处理快速、简单,用量少,灵敏度高,定性准确,谱图直观等特点。     

玉米中9种磺酰脲类除草剂的超高效液相色谱-串联质谱法同时测定

采用超高效液相色谱-串联四极杆质谱(UPLC-MS/MS),在多反应监测(MRM )模式下建立了玉米中9种磺酰脲类除草剂残留的定性定量分析方法.样品浸泡后采用甲醇-丙酮(体积比1:1)提取、浓缩,经C18固相萃取柱净化处理.采用UPLC-ESI MS/MS方法测定,外标法定量.9种磺酰脲类除草剂在0.05～2.0 mg...     

键合型有机/无机杂化材料加载条形波导电光调制器

相对于普通的有机/无机杂化材料,侧链键合型有机/无机杂化材料能提高生色团的掺杂浓度,避免出现结晶、相分离等现象,同时生色团极化有序性的弛豫因生色团运动受阻而降低,具有较高的热稳定性.本文采用溶胶凝胶法合成了一种性能优良、稳定的侧链键合型有机/无机杂化材料,并将这种材料应用于电光调制器的电光层,利用传统的半导体工艺,采用...     

基于舰船尾流激光雷达的Monte Carlo模型及方差消减方法研究

对舰船尾流激光散射机理及探测过程的数值模拟是研究舰船尾流激光探测与制导的重要基础.首先分析了Monte Carlo方法引入到尾流激光雷达数值模拟领域研究的可行性.结合自行研制的尾流激光雷达实际参数,建立了尾流激光探测的Monte Carlo数值仿真模型.通过对仿真结果进行统计,深入剖析了仿真结果方差大及光子利用率低等问题的成因.为解决该问题,基于有偏采样理论和分裂-轮盘赌基本原理提出了接收光学视场内光子强行碰撞方法和以光子自由程总长度为准则的光子分裂方法,并进行了两方法的融合.仿真与实验结果的对比分析表明,提出的模型仿真结果与实验数据符合较好,验证了模型的正确性;提出的接收光学视场内光子强行碰撞方法和光子分裂方法能有效减小方差并提高光子利用率;解决了Monte Carlo方法引入到尾流激光雷达模拟过程中的适用性问题.     

Polishing experiments of thin mirror with magnetic medium assistant polishing technology

The thin mirrors are widely used in active optical system. In this letter, magnetic medium assistant polishing （MMAP） technology and device are discussed for thin mirrors optical finishing. The principle of MMAP is introduced, the magnetic tool for polishing is designed, and the removal function of magnetic polishing tool is studied. On the basis study of the material removal function especially removal property in the edge region, the tool-path is optimized, and the dwell time distribution of computer-controlled MMAP is researched. The glass thin mirror is polished by MMAP technology. The diameter of the work-piece equals S22201 150 mm and the thickness is 5 mm. The initial surface error is 0.19 λ （root mean square （RMS）） , and after two steps fabrication, the final surface error reaches 0.02 λ. The experimental rsults verify that the technology is effective for thin mirrors finishing.     

High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 m ·cm2 with a total active area of 2.46×10-3 cm2 . Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250℃ in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9×10-5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.     

活化玻碳电极伏安法测定锰的研究

采用活化玻碳电极(GC)以伏安法对测定锰进行了研究。结果表明:沉积于电极表面的二氧化锰对锰(Ⅱ)的电化学氧化具有自催化作用,活化GC电极可极大地提高测定锰的灵敏度。在0.04mol LNH3 NH4Cl(pH9.0)底液中,锰浓度在6.0×10-8～1.0×10-5mol L范围内成线性关系,检出限为4.0×10-8mol L。用3×10-7mol L锰溶液重复测定9次,RSD为1.6%。     

磁流变抛光二次非球面工件位置对刀校正

近年来,磁流变抛光作为一种确定性加工方法已成为获得高精度非球面的重要手段。作者以回转对称二次抛物面为例,分析了磁流变抛光中使用抛光轮校正工件位置的理论方法,并通过实验在Φ230 mm熔石英样件上验证对刀理论,分别在X方向和Y方向以少于3次的调整次数校正工件位置,实现了X方向、Y方向偏置量均低于0.009 mm;采用磁流变抛光技术对工件进行了修形实验验证,加工后面形精度RMS由λ/7收敛至λ/40。实验结果表明:作者提出的非球面工件位置对刀校正方法简单、可靠,能够很好地对工件进行精确定位,利于高精度非球面磁流变抛光加工。